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公开(公告)号：US20090097511A1
公开(公告)日：2009-04-16
申请号：US12248984
申请日：2008-10-10
申请人： Stefan MOHRDIEK , Joerg Troger , Nicolai Matuschek
发明人： Stefan MOHRDIEK , Joerg Troger , Nicolai Matuschek
CPC分类号： H01S5/146 , H01S3/06754 , H01S3/094003 , H01S3/094076 , H01S3/09415 , H01S3/1305 , H01S5/0287 , H01S5/06216 , H01S5/0657 , H01S5/06835 , H01S5/1021 , H01S5/141 , H01S2301/03 , H01S2301/06
摘要： A laser light source comprises a semiconductor laser adapted for pulsed operation, a partially transmitting wavelength selective light reflector. The semiconductor laser comprises a front facet and a back facet. The front facet and the back facet define an internal laser cavity. The internal laser cavity comprises a laser active medium. The partially transmitting wavelength selective light reflector has a peak reflectivity within a gain bandwidth of said laser active medium. The wavelength selective light reflector and the back facet define an external laser cavity. A roundtrip time of light in the external laser cavity is about 20 nanoseconds or less. A full width half maximum bandwidth of the wavelength selective light reflector is adapted to accommodate at least 12 longitudinal modes of the internal laser cavity and at least 250 longitudinal modes of the external laser cavity.
摘要翻译： 激光源包括适于脉冲操作的半导体激光器，部分透射的波长选择性光反射器。 半导体激光器包括前刻面和后刻面。 前面和后面定义了内部激光腔。 内部激光腔包括激光活性介质。 部分透射波长选择光反射器在所述激光活性介质的增益带宽内具有峰值反射率。 波长选择性光反射器和背面定义了外部激光腔。 外部激光腔的往返时间约为20纳秒或更短。 波长选择光反射器的全宽度半最大带宽适于容纳至少12个纵向模式的内部激光腔和至少250个纵向模式的外部激光腔。
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公开(公告)号：US20100220762A1
公开(公告)日：2010-09-02
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/042
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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公开(公告)号：US08199784B2
公开(公告)日：2012-06-12
申请号：US12248984
申请日：2008-10-10
申请人： Stefan Mohrdiek , Joerg Troger , Nicolai Matuschek
发明人： Stefan Mohrdiek , Joerg Troger , Nicolai Matuschek
CPC分类号： H01S5/146 , H01S3/06754 , H01S3/094003 , H01S3/094076 , H01S3/09415 , H01S3/1305 , H01S5/0287 , H01S5/06216 , H01S5/0657 , H01S5/06835 , H01S5/1021 , H01S5/141 , H01S2301/03 , H01S2301/06
摘要： A laser light source comprises a semiconductor laser adapted for pulsed operation, a partially transmitting wavelength selective light reflector. The semiconductor laser comprises a front facet and a back facet. The front facet and the back facet define an internal laser cavity. The internal laser cavity comprises a laser active medium. The partially transmitting wavelength selective light reflector has a peak reflectivity within a gain bandwidth of said laser active medium. The wavelength selective light reflector and the back facet define an external laser cavity. A roundtrip time of light in the external laser cavity is about 20 nanoseconds or less. A full width half maximum bandwidth of the wavelength selective light reflector is adapted to accommodate at least 12 longitudinal modes of the internal laser cavity and at least 250 longitudinal modes of the external laser cavity.
摘要翻译： 激光源包括适于脉冲操作的半导体激光器，部分透射的波长选择性光反射器。 半导体激光器包括前刻面和后刻面。 前面和后面定义了内部激光腔。 内部激光腔包括激光活性介质。 部分透射波长选择光反射器在所述激光活性介质的增益带宽内具有峰值反射率。 波长选择性光反射器和背面定义了外部激光腔。 外部激光腔的往返时间约为20纳秒或更短。 波长选择光反射器的全宽度半最大带宽适于容纳至少12个纵向模式的内部激光腔和至少250个纵向模式的外部激光腔。
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公开(公告)号：US08111727B2
公开(公告)日：2012-02-07
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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公开(公告)号：US20100189152A1
公开(公告)日：2010-07-29
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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公开(公告)号：US08908729B2
公开(公告)日：2014-12-09
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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