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公开(公告)号：US20100220762A1
公开(公告)日：2010-09-02
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/042
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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公开(公告)号：US08908729B2
公开(公告)日：2014-12-09
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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公开(公告)号：US08111727B2
公开(公告)日：2012-02-07
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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公开(公告)号：US20100189152A1
公开(公告)日：2010-07-29
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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5.发明授权Titanium nitride diffusion barrier for use in non-silicon technologies and method 失效用于非硅技术和方法的氮化钛扩散阻挡层公开(公告)号：US06204560B1
公开(公告)日：2001-03-20
申请号：US09063173
申请日：1998-04-20
申请人： Andreas Daetwyler , Urs Deutsch , Christoph Harder , Wilhelm Heuberger , Eberhard Latta , Abram Jakubowicz , Albertus Oosenbrug , William Patrick , Peter Roentgen , Erica Williams
发明人： Andreas Daetwyler , Urs Deutsch , Christoph Harder , Wilhelm Heuberger , Eberhard Latta , Abram Jakubowicz , Albertus Oosenbrug , William Patrick , Peter Roentgen , Erica Williams
IPC分类号： H01L2352
CPC分类号： H01S5/0425 , H01L21/28575 , Y10S257/915
摘要： As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.
摘要翻译： 如下文将更详细地描述的，这里公开了用于非硅半导体技术的氮化钛扩散阻挡层和相关方法。 在本发明的一个方面中，半导体器件包括非硅有源表面。 该改进包括用于形成与非硅有源表面的外部电连接的欧姆接触，其中欧姆接触包括至少一层主要由氮化钛组成的层。 在本发明的另一方面，公开了一种半导体脊波导激光器，其包括半导体衬底和设置在衬底上的有源层。 包覆层部分地支撑在衬底上并且部分地支撑在有源层上。 包覆层包括以与活性区域相对的关系设置的脊部。 金属化结构基本上覆盖脊部并且包括至少一个由氮化钛组成的层。
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公开(公告)号：US08831062B2
公开(公告)日：2014-09-09
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译： 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区域和p区域之间设置有有源区域，其具有前端部分和后端部分，邻近n区域的n-金属化层，并且具有用于将电流注入到第一注入器中的第一注入器 有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。
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公开(公告)号：US20130070800A1
公开(公告)日：2013-03-21
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译： 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区和p区之间设置有一有源区，该区具有一前端和一后端段，n-金属化层位于邻近该n-区并具有用于将电流注入 有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。
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公开(公告)号：US5413942A
公开(公告)日：1995-05-09
申请号：US899548
申请日：1992-06-16
IPC分类号： H01L21/479 , H01L27/04 , H01L31/032 , H01L45/00 , H01L21/26
CPC分类号： H01L27/04 , H01L21/479 , H01L31/0322 , H01L31/0323 , Y02E10/541 , Y10S438/93
摘要： The invention relates to a monolithic two- or three-dimensional multi-element electronic structure made of a ternary or multinary chalogenide and pnictide semiconductor. The invention further relates to a method for the production of monolithic electronic single- or multi-element structures from semionic materials, which comprises applying at about ambient temperatures or below, a predetermined electric field, localized to specific locations of said structure, if desired with an additional excitation field thus creating the desired electronic device elements throughout the semionic material at predetermined locations thereof.
摘要翻译： 本发明涉及由三元或多金属卤化物和半导体半导体制成的单片二维或三维多元素电子结构。 本发明还涉及从半导体材料制造单片电子单元件或多元件结构的方法，其包括在约环境温度或更低的温度下施加局域化到所述结构的特定位置的预定电场，如果需要， 一个额外的激励场因此在其预定位置处遍及整个半离子材料产生所需的电子器件元件。
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公开(公告)号：US5650337A
公开(公告)日：1997-07-22
申请号：US435371
申请日：1995-05-05
申请人： David Cahen , Leonid Chernyak , Abram Jakubowicz
发明人： David Cahen , Leonid Chernyak , Abram Jakubowicz
IPC分类号： H01L21/8256 , H01L21/26
CPC分类号： H01L21/8256
摘要： The invention related to a process for the production of a monolithic electronic and/or optoelectronic single-element or multi-element structure from a semionic material selected from the group of semionic materials comprising doped elemental semiconductors and doped binary, ternary or multinary chalcogenide or pnictide semiconductors, said process comprising: (a) establishing a location in a semionic body; (b) applying an electric field to said location in said semionic body; (c) maintaining said semionic body including said location at a temperature sufficiently low to preclude melting or decomposition of the semionic body while said electric field is being applied; and (d) controlling the electric field as to magnitude and time so that no decomposition and macroscopic melting of the material occurs while creating doping profiles sufficiently sharp to define at least one homojunction and thus create an electronic or optoelectronic device element in the semionic material in said location thereof. The invention further relates to the monolithic electronic and/or optoelectric structures produced by said process.
摘要翻译： 本发明涉及从选自包含掺杂元素半导体和掺杂二元，三元或多元硫属元素或杂质的半原子材料的组的半模材料制备单片电子和/或光电单元件或多元件结构的方法 所述方法包括：（a）在半离子体中建立位置; （b）向所述半模体内的所述位置施加电场; （c）将包括所述位置的所述阴离子体在足够低的温度下保持，以防止在施加所述电场时所述半体的熔化或分解; 并且（d）控制电场的幅度和时间，使得材料不会发生分解和宏观熔化，同时产生足够锐度的掺杂分布，以限定至少一个同态结，从而在半导体材料中产生电子或光电器件元件 其位置。 本发明还涉及由所述方法生产的单片电子和/或光电结构。
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公开(公告)号：US20200343692A1
公开(公告)日：2020-10-29
申请号：US16925415
申请日：2020-07-10
申请人： Abram Jakubowicz , Martin Sueess
发明人： Abram Jakubowicz , Martin Sueess
摘要： Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.
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