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公开(公告)号：US08908729B2
公开(公告)日：2014-12-09
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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公开(公告)号：US06462878B1
公开(公告)日：2002-10-08
申请号：US09930606
申请日：2001-08-15
IPC分类号： G02B528
CPC分类号： H01S3/08059 , H01S3/08004
摘要： The invention is a double chirped mirror and a method of constructing a double chirped mirror for a frequency range of electromagnetic radiation, comprising specifying a design including a plurality of layers, the plurality of layers being transparent to the electromagnetic radiation and having refractive indices which vary between layers in the plurality of layers, and wherein for a first set of layers the optical thickness of alternate layers in the set of layers varies monotonically and the total optical thickness of a layer and the two adjacent half layers in the set of layers varies monotonically. The design is optimized by adjusting the optical thickness of layers in the plurality of layers.
摘要翻译： 本发明是一种双啁啾反射镜和一种构造电磁辐射频率范围的双啁啾反射镜的方法，其特征在于包括规定包括多个层的设计，所述多个层对电磁辐射是透明的，并且具有变化的折射率 在多个层中的层之间，并且其中对于第一组层，该组层中的交替层的光学厚度单调变化，并且该组层中的层和两个相邻的半层的总光学厚度单调变化 。 通过调整多个层中的层的光学厚度来优化设计。
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公开(公告)号：US20090097511A1
公开(公告)日：2009-04-16
申请号：US12248984
申请日：2008-10-10
申请人： Stefan MOHRDIEK , Joerg Troger , Nicolai Matuschek
发明人： Stefan MOHRDIEK , Joerg Troger , Nicolai Matuschek
CPC分类号： H01S5/146 , H01S3/06754 , H01S3/094003 , H01S3/094076 , H01S3/09415 , H01S3/1305 , H01S5/0287 , H01S5/06216 , H01S5/0657 , H01S5/06835 , H01S5/1021 , H01S5/141 , H01S2301/03 , H01S2301/06
摘要： A laser light source comprises a semiconductor laser adapted for pulsed operation, a partially transmitting wavelength selective light reflector. The semiconductor laser comprises a front facet and a back facet. The front facet and the back facet define an internal laser cavity. The internal laser cavity comprises a laser active medium. The partially transmitting wavelength selective light reflector has a peak reflectivity within a gain bandwidth of said laser active medium. The wavelength selective light reflector and the back facet define an external laser cavity. A roundtrip time of light in the external laser cavity is about 20 nanoseconds or less. A full width half maximum bandwidth of the wavelength selective light reflector is adapted to accommodate at least 12 longitudinal modes of the internal laser cavity and at least 250 longitudinal modes of the external laser cavity.
摘要翻译： 激光源包括适于脉冲操作的半导体激光器，部分透射的波长选择性光反射器。 半导体激光器包括前刻面和后刻面。 前面和后面定义了内部激光腔。 内部激光腔包括激光活性介质。 部分透射波长选择光反射器在所述激光活性介质的增益带宽内具有峰值反射率。 波长选择性光反射器和背面定义了外部激光腔。 外部激光腔的往返时间约为20纳秒或更短。 波长选择光反射器的全宽度半最大带宽适于容纳至少12个纵向模式的内部激光腔和至少250个纵向模式的外部激光腔。
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公开(公告)号：US08111727B2
公开(公告)日：2012-02-07
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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公开(公告)号：US20100189152A1
公开(公告)日：2010-07-29
申请号：US11993304
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。
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公开(公告)号：US08199784B2
公开(公告)日：2012-06-12
申请号：US12248984
申请日：2008-10-10
申请人： Stefan Mohrdiek , Joerg Troger , Nicolai Matuschek
发明人： Stefan Mohrdiek , Joerg Troger , Nicolai Matuschek
CPC分类号： H01S5/146 , H01S3/06754 , H01S3/094003 , H01S3/094076 , H01S3/09415 , H01S3/1305 , H01S5/0287 , H01S5/06216 , H01S5/0657 , H01S5/06835 , H01S5/1021 , H01S5/141 , H01S2301/03 , H01S2301/06
摘要： A laser light source comprises a semiconductor laser adapted for pulsed operation, a partially transmitting wavelength selective light reflector. The semiconductor laser comprises a front facet and a back facet. The front facet and the back facet define an internal laser cavity. The internal laser cavity comprises a laser active medium. The partially transmitting wavelength selective light reflector has a peak reflectivity within a gain bandwidth of said laser active medium. The wavelength selective light reflector and the back facet define an external laser cavity. A roundtrip time of light in the external laser cavity is about 20 nanoseconds or less. A full width half maximum bandwidth of the wavelength selective light reflector is adapted to accommodate at least 12 longitudinal modes of the internal laser cavity and at least 250 longitudinal modes of the external laser cavity.
摘要翻译： 激光源包括适于脉冲操作的半导体激光器，部分透射的波长选择性光反射器。 半导体激光器包括前刻面和后刻面。 前面和后面定义了内部激光腔。 内部激光腔包括激光活性介质。 部分透射波长选择光反射器在所述激光活性介质的增益带宽内具有峰值反射率。 波长选择性光反射器和背面定义了外部激光腔。 外部激光腔的往返时间约为20纳秒或更短。 波长选择光反射器的全宽度半最大带宽适于容纳至少12个纵向模式的内部激光腔和至少250个纵向模式的外部激光腔。
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7.发明申请STABILIZED LASER SOURCE WITH VERY HIGH RELATIVE FEEDBACK AND NARROW BANDWIDTH 审中-公开稳定的激光源具有非常高的相对反馈和窄带宽公开(公告)号：US20090310634A1
公开(公告)日：2009-12-17
申请号：US12496919
申请日：2009-07-02
申请人： Stefan MOHRDIEK , Tomas PLISKA , Nicolai MATUSCHEK
发明人： Stefan MOHRDIEK , Tomas PLISKA , Nicolai MATUSCHEK
IPC分类号： H01S3/13
CPC分类号： H01S5/141 , H01S5/0092 , H01S5/0287 , H01S5/0683 , H01S5/1039 , H01S5/1096 , H01S5/146
摘要： This invention relates to the stabilization of a laser source used in opto-electronics, specifically a source comprising a semiconductor laser diode. Such laser sources are often used as so-called pump lasers for fiber amplifiers in the field of optical communication, erbium-doped fiber amplifiers being a prominent example. Such lasers are usually designed to provide a narrow-bandwidth optical radiation with a stable power output in a given frequency band. The present invention now concerns such a laser source using external reflector means, preferably consisting of one or more appropriately designed fiber Bragg gratings, providing very high relative feedback with an extremely narrow bandwidth, combined with a very long external cavity encompassing about 100 modes or more and an extremely low front facet reflectivity of the laser diode. Also, the FWHM bandwidth of the external reflector is selected to be significantly smaller than the distance between the modes within the laser diode. This stabilizes the laser source extremely well in its operation, even without an active temperature stabilizing element.
摘要翻译： 本发明涉及用于光电子器件的激光源的稳定化，具体地说，涉及包括半导体激光二极管的源。 这种激光源通常用作光通信领域的光纤放大器的所谓的泵浦激光器，铒掺杂光纤放大器是一个突出的例子。 这种激光器通常设计成在给定频带中提供具有稳定功率输出的窄带宽光辐射。 本发明现在涉及使用外部反射器装置的这种激光源，其优选地由一个或多个适当设计的光纤布拉格光栅组成，提供非常高的相对反馈带宽极窄，与包含大约100个模式或更多的非常长的外部空腔相结合 以及激光二极管的极小的前端面反射率。 此外，外部反射器的FWHM带宽被选择为显着小于激光二极管内的模式之间的距离。 即使没有主动的温度稳定元件，也能够使激光源的工作稳定。
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8.发明授权Laser source with high relative feedback and method for making such a laser source 有权具有高相对反馈的激光源和制造这种激光源的方法公开(公告)号：US07099361B2
公开(公告)日：2006-08-29
申请号：US10775302
申请日：2004-02-10
申请人： Nicolai Matuschek , Stefan Mohrdiek , Tomas Pliska
发明人： Nicolai Matuschek , Stefan Mohrdiek , Tomas Pliska
CPC分类号： H01S5/141 , H01S5/028 , H01S5/0654 , H01S5/0656 , H01S5/0683 , H01S5/142 , H01S5/147
摘要： The invention relates to the stabilization of high power semiconductor laser diode sources as they are extensively used in the field of optical communication. Such lasers are mostly employed as so-called pump laser sources for fiber amplifiers, e.g. erbium-doped fiber amplifiers, and are designed to provide a narrow-bandwidth optical radiation with a stable power output in a given frequency band. To improve the wavelength locking range of such laser sources when operating without an active temperature stabilizing element, an external reflector providing very high relative feedback is used. The reflectivity bandwidth of the external reflector is broadened for improving the stability of the laser source. In commonly employed optical fibers for conducting the laser beam, the external reflector is formed by one or a plurality of appropriately designed fiber Bragg gratings.
摘要翻译： 本发明涉及在光通信领域广泛应用的大功率半导体激光二极管源的稳定化。 这种激光器主要用作所谓的用于光纤放大器的泵浦激光源，例如， 掺铒光纤放大器，并且被设计为在给定频带中提供具有稳定功率输出的窄带宽光辐射。 为了在没有有源温度稳定元件的情况下操作时改善这种激光源的波长锁定范围，使用提供非常高的相对反馈的外部反射器。 为了提高激光源的稳定性，外部反射器的反射带宽变宽。 在通常使用的用于传导激光束的光纤中，外部反射器由一个或多个适当设计的光纤布拉格光栅形成。
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公开(公告)号：US06301049B1
公开(公告)日：2001-10-09
申请号：US09080904
申请日：1998-05-18
IPC分类号： G02B528
CPC分类号： H01S3/08059 , H01S3/08004
摘要： The invention is a double chirped mirror and a method of constructing a double chirped mirror for a frequency range of electromagnetic radiation, comprising specifying a design including a plurality of layers, the plurality of layers being transparent to the electromagnetic radiation and having refractive indices which vary between layers in the plurality of layers, and wherein for a first set of layers the optical thickness of alternate layers in the set of layers varies monotonically and the total optical thickness of a layer and the two adjacent half layers in the set of layers varies monotonically. The design is optimized by adjusting the optical thickness of layers in the plurality of layers.
摘要翻译： 本发明是一种双啁啾反射镜和一种构造电磁辐射频率范围的双啁啾反射镜的方法，其特征在于包括规定包括多个层的设计，所述多个层对电磁辐射是透明的，并且具有变化的折射率 在多个层中的层之间，并且其中对于第一组层，该组层中的交替层的光学厚度单调变化，并且该组层中的层和两个相邻的半层的总光学厚度单调变化 。 通过调整多个层中的层的光学厚度来优化设计。
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公开(公告)号：US20100220762A1
公开(公告)日：2010-09-02
申请号：US11993247
申请日：2006-06-28
IPC分类号： H01S5/042
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译： 半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。 为此，电流阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
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