公开(公告)号：US20080179380A1

公开(公告)日：2008-07-31

申请号：US11567977

申请日：2006-12-07

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder

IPC分类号： A47J36/02

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/02 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014

摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

摘要翻译： 辐射发射半导体组件具有改进的辐射效率。 半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。 多层结构邻接窗口的第一主表面。 为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。 凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

公开(公告)号：US20070278508A1

公开(公告)日：2007-12-06

申请号：US10587666

申请日：2005-01-25

申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

公开(公告)号：US20060237734A1

公开(公告)日：2006-10-26

申请号：US10567935

申请日：2004-08-19

申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0083 ,  H01L2933/0091

摘要： A thin-layer LED chip (5) is claimed, comprising an epitaxial layer sequence (6) that is disposed on a carrier element (2) and contains an electromagnetic-radiation-generating active region (8), and a reflective layer (3) that is disposed on a principal surface of the epitaxial layer sequence (6) facing toward the carrier element (2) and reflects at least a portion of the electromagnetic radiation generated in the epitaxial layer sequence (6) back thereinto, in which a structured layer (1) containing a glass material is applied to a radiation extraction surface (7) of the epitaxial layer sequence (6) facing away from said carrier element (2) and has a structure that includes mutually adjacent protuberances (5) that taper in the direction away from the radiation extraction surface (7) and have a lateral grid size that is smaller than one wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence (6). The structured layer (1) is advantageously applied as spin-on glass and structured by grayscale lithography.

摘要翻译： 要求保护薄层LED芯片（5），其包括设置在载体元件（2）上并包含电磁辐射生成有源区（8）的外延层序列（6）和反射层 ），其设置在面向载体元件（2）的外延层序列（6）的主表面上，并将在外延层序列（6）中产生的电磁辐射的至少一部分反射回到其中，其中结构化 将包含玻璃材料的层（1）施加到外延层序列（6）的远离所述载体元件（2）的辐射提取表面（7）上，并且具有包括彼此相邻的突起（5）的结构， 离开辐射提取表面（7）的方向并且具有小于从外延层序列（6）发射的电磁辐射的一个波长的横向网格尺寸。 结构化层（1）有利地作为旋涂玻璃施加，并通过灰度平版印刷法构成。

公开(公告)号：US07592636B2

公开(公告)日：2009-09-22

申请号：US10529625

申请日：2003-09-23

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L21/00 ,  H01L23/495

CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。

公开(公告)号：US20060124945A1

公开(公告)日：2006-06-15

申请号：US10529625

申请日：2003-09-23

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L33/00 ,  H01L21/78

CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。

公开(公告)号：US06891199B2

公开(公告)日：2005-05-10

申请号：US10343851

申请日：2001-07-24

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Ulrich Jacob ,  Werner Plass ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Ulrich Jacob ,  Werner Plass ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

IPC分类号： H01L33/20 ,  H01L33/24 ,  H01L29/16

CPC分类号： H01L33/20 ,  H01L33/24 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.

摘要翻译： 用于高性能发光二极管的半导体芯片（1）的纵向边比其横向侧面大得多。 以这种方式可以显着改善光提取。

公开(公告)号：US20080093611A1

公开(公告)日：2008-04-24

申请号：US11579194

申请日：2004-04-29

申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

IPC分类号： H01L21/04 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。

公开(公告)号：US20060289854A1

公开(公告)日：2006-12-28

申请号：US11463633

申请日：2006-08-10

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

IPC分类号： H01L31/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US20080203410A1

公开(公告)日：2008-08-28

申请号：US11576057

申请日：2005-08-04

申请人： Herbert Brunner ,  Dieter Eissler ,  Berthold Hahn ,  Volker Harle ,  Harald Jager ,  Gertrud Krauter ,  Gunter Waitl

发明人： Herbert Brunner ,  Dieter Eissler ,  Berthold Hahn ,  Volker Harle ,  Harald Jager ,  Gertrud Krauter ,  Gunter Waitl

IPC分类号： H01L33/00

CPC分类号： H01L33/508 ,  H01L2933/0041

摘要： The invention relates to a method of making LED chips provided with a luminescence conversion material containing at least one phosphor. In the method, a layer composite is prepared that includes an LED layer sequence for a multiplicity of LED chips and comprises on a main surface at least one electrical contact surface for each LED chip, for electrically connecting said chip. A layer of adhesion promoter is applied to the main surface and selectively removed from at least portions of the contact surfaces. At least one phosphor is then applied to the main surface. Alternatively, a luminescence conversion material is applied to the main surface and selectively removed from at least portions of the contact surfaces. The invention also relates to an LED chip provided with a luminescence conversion material.

摘要翻译： 本发明涉及制造具有含有至少一种荧光体的发光转换材料的LED芯片的方法。 在该方法中，制备层复合物，其包括用于多个LED芯片的LED层序列，并且在主表面上包括用于每个LED芯片的至少一个电接触表面，用于电连接所述芯片。 将一层粘合促进剂施加到主表面并且从至少部分接触表面选择性地除去。 然后将至少一种荧光体施加到主表面。 或者，将发光转换材料施加到主表面并且从至少部分接触表面选择性地去除。 本发明还涉及具有发光转换材料的LED芯片。

公开(公告)号：US20070205525A1

公开(公告)日：2007-09-06

申请号：US11707589

申请日：2007-02-15

申请人： Karl Engl ,  Berthold Hahn ,  Volker Harle

发明人： Karl Engl ,  Berthold Hahn ,  Volker Harle

IPC分类号： B29D11/00

CPC分类号： B29D11/00278 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0005 ,  G03F7/2035 ,  H01L31/0232 ,  H01L33/22

摘要： A method for producing structures (5) on a multiplicity of optoelectronic components (1), wherein the multiplicity of optoelectronic components (1) are arranged on an auxiliary carrier (10) and the structures (5) are produced by carrying out a movement of a first roller (15) relative to the auxiliary carrier (10) and producing the structures (5) in the process by means of exerting a pressure between the first roller (15) and the auxiliary carrier (10).

摘要翻译： 一种用于在多个光电子部件（1）上制造结构（5）的方法，其中所述多个光电子部件（1）布置在辅助载体（10）上，并且所述结构（5）通过执行 相对于辅助载体（10）的第一辊（15），并且通过在第一辊（15）和辅助载体（10）之间施加压力来在该过程中产生结构（5）。