利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.028 秒)

    Display device and method of its manufacture
    4.
    发明授权
    Display device and method of its manufacture 有权
    显示装置及其制造方法

    公开(公告)号：US07235920B2

    公开(公告)日：2007-06-26

    申请号：US10670917

    申请日：2003-09-24

    申请人： Volker Haerle ,  Berthold Hahn

    发明人： Volker Haerle ,  Berthold Hahn

    IPC分类号： H05B33/00 ,  H01J9/00

    CPC分类号： H01L27/3244 ,  H01L27/3209 ,  H01L27/3211 ,  H01L29/78684 ,  H01L2251/5323

    摘要： A display device and method for its manufacture. In a display device with a first array of individual display elements and a second array of control transistors for the display elements, control transistors are formed from a semiconductor material with a large band gap and are transparent in the visible spectral range. The invention also comprises a method for manufacturing such a display device.

    摘要翻译： 一种显示装置及其制造方法。 在具有单独显示元件的第一阵列和用于显示元件的第二控制晶体管阵列的显示装置中，控制晶体管由具有大带隙的半导体材料形成，并且在可见光谱范围内是透明的。 本发明还包括一种用于制造这种显示装置的方法。

    Method for the production of semi-conductor chips
    5.
    发明申请
    Method for the production of semi-conductor chips 有权
    生产半导体芯片的方法

    公开(公告)号：US20060211159A1

    公开(公告)日：2006-09-21

    申请号：US10561255

    申请日：2005-06-24

    申请人： Georg Bruederl ,  Berthold Hahn ,  Volker Haerle

    发明人： Georg Bruederl ,  Berthold Hahn ,  Volker Haerle

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/172 ,  H01L21/76254 ,  H01L21/78 ,  H01L33/0079

    摘要： A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack, comprising the following method steps: preparing a growth substrate wafer (1) substantially comprised of semiconductor material from a semiconductor material system that is with respect to lattice parameters the same as or similar to that on which a semiconductor layer sequence for the functional semiconductor layer stack is based, forming in the growth substrate wafer (1) a separation zone (4) disposed parallel to a main face (100) of the growth substrate wafer (1), joining the growth substrate wafer (1) to an auxiliary carrier wafer (2), detaching along the separation zone (4) a portion (11) of the growth substrate wafer (1) that faces away from the auxiliary carrier wafer (2) as viewed from the separation zone (4), forming on the portion (12) of the growth substrate wafer remaining on the auxiliary carrier wafer (2) a growth surface for subsequent epitaxial growth of a semiconductor layer sequence, epitaxially growing the semiconductor layer sequence (5) on the growth surface, applying a chip substrate wafer to the semiconductor layer sequence, detaching the auxiliary carrier wafer (2), and singulating the composite composed of the semiconductor layer sequence and the chip substrate wafer (7) into mutually separate semiconductor chips.

    摘要翻译： 一种制造多个半导体芯片，特别是辐射发射半导体芯片的方法，每个半导体芯片具有至少一个外延生产的功能半导体层堆叠，包括以下方法步骤：制备基本上由半导体材料组成的生长衬底晶片（1） 半导体材料系统，其相对于与功能半导体层堆叠的半导体层序列相同或类似的晶格参数，在生长衬底晶片（1）中形成平行于功能半导体层堆叠的分离区（4） 生长衬底晶片（1）的主面（100），将生长衬底晶片（1）接合到辅助载体晶片（2），沿着分离区（4）分离生长衬底晶片的部分（11） （1），其从所述分离区（4）观察时远离所述辅助载体晶片（2），在所述生长衬垫的所述部分（12）上形成 e晶片保留在辅助载体晶片（2）上，用于随后外延生长半导体层序列，在生长表面上外延生长半导体层序列（5），将芯片衬底晶片应用于半导体层序列，分离 辅助载体晶片（2），将由半导体层序列和芯片基板晶片（7）组成的复合体分离成相互分开的半导体芯片。

    Method for the production of semi-conductor chips
    8.
    发明授权
    Method for the production of semi-conductor chips 有权
    生产半导体芯片的方法

    公开(公告)号：US07329587B2

    公开(公告)日：2008-02-12

    申请号：US10561255

    申请日：2004-06-24

    申请人： Georg Bruederl ,  Berthold Hahn ,  Volker Haerle

    发明人： Georg Bruederl ,  Berthold Hahn ,  Volker Haerle

    IPC分类号： H01L21/46

    CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/172 ,  H01L21/76254 ,  H01L21/78 ,  H01L33/0079

    摘要： A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack, comprising the following method steps: preparing a growth substrate wafer (1) substantially comprised of semiconductor material from a semiconductor material system that is with respect to lattice parameters the same as or similar to that on which a semiconductor layer sequence for the functional semiconductor layer stack is based, forming in the growth substrate wafer (1) a separation zone (4) disposed parallel to a main face (100) of the growth substrate wafer (1), joining the growth substrate wafer (1) to an auxiliary carrier wafer (2), detaching along the separation zone (4) a portion (11) of the growth substrate wafer (1) that faces away from the auxiliary carrier wafer (2) as viewed from the separation zone (4), forming on the portion (12) of the growth substrate wafer remaining on the auxiliary carrier wafer (2) a growth surface for subsequent epitaxial growth of a semiconductor layer sequence, epitaxially growing the semiconductor layer sequence (5) on the growth surface, applying a chip substrate wafer to the semiconductor layer sequence, detaching the auxiliary carrier wafer (2), and singulating the composite composed of the semiconductor layer sequence and the chip substrate wafer (7) into mutually separate semiconductor chips.

    摘要翻译： 一种制造多个半导体芯片，特别是辐射发射半导体芯片的方法，每个半导体芯片具有至少一个外延生产的功能半导体层堆叠，包括以下方法步骤：制备基本上由半导体材料组成的生长衬底晶片（1） 半导体材料系统，其相对于与功能半导体层堆叠的半导体层序列相同或类似的晶格参数，在生长衬底晶片（1）中形成平行于功能半导体层堆叠的分离区（4） 生长衬底晶片（1）的主面（100），将生长衬底晶片（1）接合到辅助载体晶片（2），沿着分离区（4）分离生长衬底晶片的部分（11） （1），其从所述分离区（4）观察时远离所述辅助载体晶片（2），在所述生长衬垫的所述部分（12）上形成 e晶片保留在辅助载体晶片（2）上，用于随后外延生长半导体层序列，在生长表面上外延生长半导体层序列（5），将芯片衬底晶片应用于半导体层序列，分离 辅助载体晶片（2），将由半导体层序列和芯片基板晶片（7）组成的复合体分离成相互分开的半导体芯片。

    Method for depositing a material on a substrate wafer
    9.
    发明授权
    Method for depositing a material on a substrate wafer 有权
    在衬底晶片上沉积材料的方法

    公开(公告)号：US07425237B2

    公开(公告)日：2008-09-16

    申请号：US10696882

    申请日：2003-10-30

    申请人： Stefan Bader ,  Hans-Jurgen Lugauer ,  Volker Haerle ,  Berthold Hahn

    发明人： Stefan Bader ,  Hans-Jurgen Lugauer ,  Volker Haerle ,  Berthold Hahn

    IPC分类号： C30B23/00

    CPC分类号： C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/324

    摘要： The deposition of material (3) on a growth area (4) may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area (4) of a substrate wafer (1), a thermal radiation absorption layer (2) is applied on a rear side (5) of the substrate wafer (1) lying opposite to the growth area (4). The thermal radiation absorption layer (2) exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AllnGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer (2) may produce a narrower emission wavelength distribution of the deposited material (3).

    摘要翻译： 材料（3）在生长区域（4）上的沉积可能是高度温度敏感的。 为了降低衬底晶片（1）的生长区域（4）上的温度不均匀性，将热辐射吸收层（2）施加在与生长相对的衬底晶片（1）的后侧（5）上 区域（4）。 热辐射吸收层（2）在加热源的光谱范围内表现出良好的辐射吸收。 由于半导体材料（特别是AllnGaN）的沉积可能导致（取决于沉积温度）沉积材料的不同发射波长，所以使用热辐射吸收层（2）可以产生较小的沉积的发射波长分布 材料（3）。