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    Method for forming concurrent top oxides using reoxidized silicon in an EPROM
    7.
    发明授权
    Method for forming concurrent top oxides using reoxidized silicon in an EPROM 失效
    在EPROM中使用再氧化硅形成并行顶部氧化物的方法

    公开(公告)号：US5665620A

    公开(公告)日：1997-09-09

    申请号：US283364

    申请日：1994-08-01

    Applicant: Bich-Yen Nguyen ,  Sergio A. Ajuria ,  Wayne Paulson ,  Jon Dahm

    Inventor： Bich-Yen Nguyen ,  Sergio A. Ajuria ,  Wayne Paulson ,  Jon Dahm

    IPC: H01L21/316 ,  H01L21/28 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8247

    CPC classification number: H01L29/6659 ,  H01L21/28273 ,  H01L29/6656

    Abstract: A stack of oxide (16) and silicon nitride (18) is grown/deposited over a patterned polysilicon line, which typically acts as a bottom capacitor plate. A thin layer of amorphous or polycrystalline silicon (20) is deposited over the blanket silicon nitride film. The thickness of the deposited silicon layer must be optimized according to the final amount of oxide desired over the silicon nitride, which will be roughly twice the thickness of the deposited silicon film. The oxide/nitride/silicon stack is then patterned and etched, stopping either at or underneath the bottom oxide. Any subsequent cleaning in potentially oxide-etching chemistries (including HF) is done with the protective silicon deposit on top of the silicon nitride. The entire structure is then thermally oxidized, transforming the deposited silicon into silicon oxide (30). Where the structure has been cleared down to the substrate by etching, a second gate oxide is simultaneously formed.

    Abstract translation: 氧化物（16）和氮化硅（18）的堆叠生长/沉积在通常用作底部电容器板的图案化多晶硅线路上。 在覆盖氮化硅膜上沉积薄层的非晶或多晶硅（20）。 沉积硅层的厚度必须根据氮化硅所需的氧化物的最终量进行优化，其大约是沉积硅膜厚度的两倍。 然后对氧化物/氮化物/硅堆叠进行构图和蚀刻，停止在底部氧化物的底部或底部。 在潜在氧化物蚀刻化学（包括HF）中的任何后续清洁都是用氮化硅顶部的保护性硅沉积物进行的。 然后将整个结构热氧化，将沉积的硅转化成氧化硅（30）。 在通过蚀刻将结构清除到衬底的同时，同时形成第二栅极氧化物。

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