Wavelength converter
    1.
    发明授权
    Wavelength converter 失效
    波长转换器

    公开(公告)号:US06577436B2

    公开(公告)日:2003-06-10

    申请号:US09800742

    申请日:2001-03-08

    申请人: Jong-Ryeol Kim

    发明人: Jong-Ryeol Kim

    IPC分类号: G02F1365

    摘要: A wavelength converter is provided. The wavelength converter includes a substrate; first and second semiconductor optical amplifiers (SOAs) provided in parallel on the substrate, each of the SOAs including a first portion which passes light at one end, and a second portion which passes light at the opposite end; a first waveguide connected to the second portions of the first and second SOAs; a second waveguide connected to the first portion of the first SOA; and a third waveguide connected to the first portions of the first and second SOAs. The first through third waveguides are arranged on one side of the substrate in the vicinity of the first portions of the first and second SOAs. The first waveguide is connected to the second portions of the first and second SOAs through a unit for changing an optical progressing path.

    摘要翻译: 提供了一种波长转换器。 波长转换器包括基板; 在基板上并联设置的第一和第二半导体光放大器(SOA),每个SOA包括在一端通过光的第一部分和在相对端通过光的第二部分; 连接到第一和第二SOA的第二部分的第一波导; 连接到第一SOA的第一部分的第二波导; 以及连接到第一和第二SOA的第一部分的第三波导。 第一至第三波导布置在第一和第二SOA的第一部分附近的基板的一侧。 第一波导通过用于改变光学进行路径的单元连接到第一和第二SOA的第二部分。

    Semiconductor monolithic integrated optical transmitter
    2.
    发明申请
    Semiconductor monolithic integrated optical transmitter 失效
    半导体单片集成光发射机

    公开(公告)号:US20050006654A1

    公开(公告)日:2005-01-13

    申请号:US10716653

    申请日:2003-11-19

    IPC分类号: G02B6/12 H01L33/00 H01S5/026

    CPC分类号: H01S5/026 H01S5/0265

    摘要: A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.

    摘要翻译: 公开了一种包括形成在半导体衬底上的多个有源层的半导体单片集成光发射器,其包括:分布反馈激光二极管,包括用于反射具有预定波长的光的光栅和用于振荡来自光栅的接收光的第一有源层 ; 一种电吸收调制器,包括用于接收来自第一有源层的光的第二有源层,其中根据施加的电压通过吸收变化改变接收的光强度; 光放大器,包括用于放大来自第二有源层的接收光的第三有源层; 第一有源层和第二有源层之间的第一光衰减器; 以及在第二有源层和第三有源层之间的第二光衰减器。

    Semiconductor monolithic integrated optical transmitter
    6.
    发明授权
    Semiconductor monolithic integrated optical transmitter 失效
    半导体单片集成光发射机

    公开(公告)号:US07245644B2

    公开(公告)日:2007-07-17

    申请号:US10716653

    申请日:2003-11-19

    IPC分类号: H01S5/00

    CPC分类号: H01S5/026 H01S5/0265

    摘要: A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.

    摘要翻译: 公开了一种包括形成在半导体衬底上的多个有源层的半导体单片集成光发射器,其包括:分布反馈激光二极管,包括用于反射具有预定波长的光的光栅和用于振荡来自光栅的接收光的第一有源层 ; 一种电吸收调制器,包括用于接收来自第一有源层的光的第二有源层,其中根据施加的电压通过吸收变化改变接收的光强度; 光放大器,包括用于放大来自第二有源层的接收光的第三有源层; 第一有源层和第二有源层之间的第一光衰减器; 以及在第二有源层和第三有源层之间的第二光衰减器。

    Wavelength-tunable laser apparatus
    7.
    发明授权
    Wavelength-tunable laser apparatus 失效
    波长可调激光设备

    公开(公告)号:US06678289B2

    公开(公告)日:2004-01-13

    申请号:US10370796

    申请日:2003-02-20

    申请人: Jong-Ryeol Kim

    发明人: Jong-Ryeol Kim

    IPC分类号: H01S310

    摘要: The present invention provides a wavelength-tunable laser apparatus which is capable of obtaining a high output while suppressing the generation of spontaneous emission, as well as having a broad wavelength-tunable range. In particular, the apparatus includes a distributed reflector section which comprises a first active layer for oscillating light, a first grating for filtering the light generated in the first active layer, and upper and lower clad layers between which the first active layer and the first grating are interposed; a gain section which is formed adjoining to a side of the distributed reflector section and comprises a second active layer disposed between the upper and lower clad layers for adjusting the gain of the light; and a gain-clamped semiconductor optical amplifier section formed adjoining to a side of the gain section, wherein the gain-clamped semiconductor optical amplifier section comprises a third active layer disposed between the upper and lower clad layers for amplifying the light to have a clamped gain and a second grating for filtering the light passing through the third active layer.

    摘要翻译: 本发明提供一种波长可调谐激光装置,其能够在抑制自发发射的产生的同时获得高输出,并且具有宽的波长可调范围。 特别地,该装置包括分布式反射器部分,其包括用于振荡光的第一有源层,用于滤波在第一有源层中产生的光的第一光栅以及第一有源层和第一光栅之间的上和下包层 插入; 所述增益部分形成在所述分布式反射器部分的一侧,并且包括设置在所述上​​部和下部包层之间的用于调节光的增益的第二有源层; 以及与所述增益部分的一侧相邻形成的增益钳位的半导体光放大器部分,其中所述增益钳位半导体光放大器部分包括设置在所述上​​包层和下包层之间的第三有源层,用于放大所述光以具有钳位增益 以及用于过滤穿过第三有源层的光的第二光栅。