公开(公告)号：US6037653A

公开(公告)日：2000-03-14

申请号：US46656

申请日：1998-03-24

申请人： Joong-do Kim ,  Kyoung-soon Bok

发明人： Joong-do Kim ,  Kyoung-soon Bok

IPC分类号： H01L23/495

CPC分类号： H01L23/49582 ,  H01L2224/48247 ,  H01L2224/85464 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01078 ,  Y10S428/929 ,  Y10T428/12875 ,  Y10T428/1291

摘要： A semiconductor lead frame and a fabricating method thereof are provided. The semiconductor lead frame includes a metal substrate, and a multi-layered plating layer including a copper-nickel alloy layer formed on the metal substrate, and a palladium or palladium alloy layer formed on the copper-nickel alloy layer.

摘要翻译： 提供半导体引线框及其制造方法。 半导体引线框架包括金属基板和形成在金属基板上的包含铜 - 镍合金层的多层镀层以及形成在铜镍合金层上的钯或钯合金层。

公开(公告)号：US6017777A

公开(公告)日：2000-01-25

申请号：US954051

申请日：1997-10-17

申请人： Joong-do Kim ,  Young-ho Baek ,  Kyoung-soon Bok

发明人： Joong-do Kim ,  Young-ho Baek ,  Kyoung-soon Bok

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/488

CPC分类号： H01L23/49582 ,  H01L2924/0002

摘要： A method for forming a plating layer of a lead frame having excellent anti-corrosion properties is provided. At least a portion of a lead frame is plated, then a first heating of the plated portion of the lead frame to a first temperature is performed, and finally a second heating of the first heated plated portion of the lead frame to a second temperature higher than the first temperature is performed. The lead frame manufactured by this method has excellent anti-corrosion properties, such that deterioration of the plating layer, by cracking and inferior solderability, is not observed.

摘要翻译： 提供了一种形成具有优异的耐腐蚀性能的引线框架的镀层的方法。 引线架的至少一部分被电镀，然后执行引线框架的电镀部分的第一次加热到第一温度，最后将引线框架的第一加热电镀部分的第二次加热升至第二温度 比第一温度执行。 通过该方法制造的引线框架具有优异的抗腐蚀性，因此不能观察到镀层的劣化，破裂和劣化的可焊性。

公开(公告)号：US5977620A

公开(公告)日：1999-11-02

申请号：US81436

申请日：1998-05-19

申请人： Joong-do Kim ,  Young-ho Baek ,  Kyoung-soon Bok

发明人： Joong-do Kim ,  Young-ho Baek ,  Kyoung-soon Bok

IPC分类号： C25D3/56 ,  C23C28/02 ,  C25D5/34 ,  C25D7/12 ,  H01L21/50 ,  H01L23/495 ,  H01L23/50 ,  H01L23/48 ,  H01L23/52 ,  H01L23/34 ,  H01L29/52

CPC分类号： C23C28/021 ,  C23C28/023 ,  H01L23/49582 ,  H01L2224/48247 ,  H01L2224/85464 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/12044

摘要： A method for manufacturing a lead frame includes degreasing and activating the surface of a metal sheet, providing the plating solution containing nickel(II) sulfamate tetrahydrate, (Ni(H.sub.2 NSO.sub.3).sub.2.4H.sub.2 O), manganese(II) sulfamate tetrahydrate (Mn(H.sub.2 NSO.sub.3).sub.2.4H.sub.2), nickel (II) chloride hexahydrate (NiCl.sub.2.6H.sub.2 O) and boric acid, plating the metal sheet in the plating solution to form a Ni--Mn alloy layer, and forming a Pd or Pd alloy layer on the Ni--Mn alloy layer.

摘要翻译： 制造引线框架的方法包括：对金属片的表面进行脱脂和活化，提供含有硝酸氨基磺酸盐（II），（Ni（H 2 NSO 3）2·4H 2 O），氨基磺酸锰（II）四水合物（Mn（H 2 NSO 3） 2.4H2），氯化镍（II）六水合物（NiCl 2·6H 2 O）和硼酸，在电镀液中镀覆金属片以形成Ni-Mn合金层，并在Ni-Mn合金上形成Pd或Pd合金层 层。

公开(公告)号：US06087712A

公开(公告)日：2000-07-11

申请号：US998475

申请日：1997-12-26

申请人： Joong-Do Kim ,  Young-Ho Baek

发明人： Joong-Do Kim ,  Young-Ho Baek

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49582 ,  H01L2924/0002

摘要： The lead frame includes outer leads plated with tin (Sn) alloy so as to withstand the high temperatures generated during a subsequent semiconductor packaging process. In addition to the outer leads, the lead frame includes a die pad and inner leads composed of a base metal, such as copper (Cu), a copper alloy, or a nickel alloy. The die pad and the inner leads are plated with silver for improved conductivity. In order to withstand relatively high temperatures as well as to resist corrosion and have good solder wettability, the outer leads are preferably plated with a tin antimony alloy, such as a tin-antimony alloy consisting of 90.+-.5 weight percent of tin and 10.+-.5 weight percent antimony. Alternatively, the outer leads can be plated with a tin-antimony-lead alloy, such as a tin-antimony-lead alloy consisting of 10.+-.5 weight percent of tin, 10.+-.5 weight percent of antimony and 80.+-.10 weight percent of lead. A method of plating a lead frame is also provided.

摘要翻译： 引线框架包括镀锡（Sn）合金的外部引线，以便经受在随后的半导体封装过程中产生的高温。 除了外引线之外，引线框还包括芯片焊盘和由诸如铜（Cu），铜合金或镍合金的基体金属构成的内部引线。 芯片焊盘和内部引线镀银，以提高导电性。 为了承受相对较高的温度以及抵抗腐蚀并且具有良好的焊料润湿性，外引线优选地镀有锡锑合金，例如由90 +/- 5重量％的锡和 10 +/- 5重量％的锑。 或者，外引线可以镀锡锑铅合金，例如锡 - 锑 - 铅合金，其由10 +/- 5重量％的锡，10 +/- 5重量％的锑和80 / -10重量％的铅。 还提供了一种电镀引线框架的方法。

公开(公告)号：US20060071310A1

公开(公告)日：2006-04-06

申请号：US11194872

申请日：2005-08-01

申请人： Woo-suk Choi ,  Joong-do Kim ,  Eun-hee Kim ,  Soo-bong Lee

发明人： Woo-suk Choi ,  Joong-do Kim ,  Eun-hee Kim ,  Soo-bong Lee

IPC分类号： H01L23/495

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48639 ,  H01L2224/48739 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/85439 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/00

摘要： Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate formed of a Fe—Ni alloy (alloy 42), and a plating layer that contains grains less than 1 micrometer in size and is plated on the substrate. The growth of whiskers when a Sn plated layer is formed on a substrate formed of a Fe—Ni alloy (alloy 42) can be suppressed by minimizing the grain size of the Sn plated layer.

公开(公告)号：US5958607A

公开(公告)日：1999-09-28

申请号：US823691

申请日：1997-03-25

申请人： Joong-do Kim ,  Young-ho Baek

发明人： Joong-do Kim ,  Young-ho Baek

IPC分类号： B05D7/14 ,  H01L23/495 ,  H01L23/50 ,  B32B15/20

CPC分类号： H01L23/49582 ,  H01L2224/48247 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  Y10S428/929 ,  Y10T428/12528 ,  Y10T428/12875 ,  Y10T428/12889 ,  Y10T428/12903 ,  Y10T428/1291

摘要： A lead frame has a metal substrate directly coated with a palladium alloy layer to prevent diffusion of metal molecules from the metal substrate. The lead frame does not contain a nickel intermediate layer, thereby preventing the diffusion of nickel molecules which makes soldering difficult, and enhancing production.

摘要翻译： 引线框架具有直接涂覆有钯合金层的金属基板，以防止金属分子从金属基板扩散。 引线框架不含有镍中间层，从而防止了使得焊接困难的镍分子的扩散，并且提高了生产。

公开(公告)号：US07501692B2

公开(公告)日：2009-03-10

申请号：US11194872

申请日：2005-08-01

申请人： Woo-suk Choi ,  Joong-do Kim ,  Eun-hee Kim ,  Soo-bong Lee

发明人： Woo-suk Choi ,  Joong-do Kim ,  Eun-hee Kim ,  Soo-bong Lee

IPC分类号： H01L23/495

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48639 ,  H01L2224/48739 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/85439 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/00

摘要： Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate formed of a Fe—Ni alloy (alloy 42), and a plating layer that contains grains less than 1 micrometer in size and is plated on the substrate. The growth of whiskers when a Sn plated layer is formed on a substrate formed of a Fe—Ni alloy (alloy 42) can be suppressed by minimizing the grain size of the Sn plated layer.

摘要翻译： 提供一种半导体引线框架，具有半导体引线框架的半导体封装以及对该半导体引线框架进行电镀的方法。 该方法包括制备由Fe-Ni合金（合金42）形成的基板和包含小于1微米的晶粒并镀在基板上的镀层。 在由Fe-Ni合金（合金42）形成的基板上形成Sn镀层的晶须的生长可以通过使镀Sn层的晶粒尺寸最小化来抑制晶须的生长。

公开(公告)号：US5767574A

公开(公告)日：1998-06-16

申请号：US792211

申请日：1997-01-31

申请人： Joong-do Kim ,  Young-ho Baek

发明人： Joong-do Kim ,  Young-ho Baek

IPC分类号： H01L23/48 ,  C23C28/02 ,  C25D5/12 ,  H01L23/495 ,  H01L23/50 ,  B05D3/00 ,  B05D3/12

CPC分类号： C23C28/021 ,  C23C28/023 ,  C25D5/12 ,  H01L23/49582 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48664 ,  H01L2224/85464 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15747

摘要： A semiconductor lead frame having an improved structure formed of plated layers is provided. The semiconductor lead frame has the structure of multi-plated layers in which a Ni plated layer, a Pd strike plated layer, and a Pd--X alloy plated layer are deposited on a substrate in the described order. In such a multi-plated layer structure, the Pd strike plated layer covers the porous surface of the Ni plated layer and decreases the surface roughness. Since the thickness of the outer Pd--X alloy plated layer can be maintained uniform due to the Pd strike plated layer, corrosion durability and bonding characteristics are enhanced, thus minimizing the generation and progress of cracks.

摘要翻译： 提供具有由镀层形成的改进结构的半导体引线框架。 半导体引线框架具有多层电镀结构，其中以所述顺序将Ni镀层，Pd冲击镀层和Pd-X合金镀层沉积在衬底上。 在这种多电镀层结构中，Pd冲击镀层覆盖Ni镀层的多孔表面并降低表面粗糙度。 由于Pd触击镀层可以保持外部Pd-X合金镀层的厚度均匀，因此提高了耐腐蚀性和接合特性，从而使裂纹的产生和进展最小化。