Abstract:
A method for creating virtual machine, a virtual machine monitor and a virtual machine system are provided in the embodiments of this application. The method comprises: mapping guest frame number (GFN) corresponding to a pseudo-physical memory of a virtual machine to a shared zero page, the shared zero page being a page having content of all zeros in physical memory; when the GFN is written by the virtual machine and if a page exception occurs, allocating a physical memory page to relieve the mapping relation between the guest frame number (GFN) and the shared zero page, and establishing a mapping relation between the guest frame number (GFN) and a machine frame number (MFN) of the physical memory page. The method can reduce the amount of memory used in virtual machine startup, improve virtual machine density, and support the concurrent startup of a memory overcommitted number of virtual machine.
Abstract:
A flash light includes a housing having a front end and a rear end to define a fixed length from the front to rear end. The housing further has a light cavity and a power cavity for receiving power source. The light arrangement includes a lens disposed at the front end of the housing, a light source disposed within the light cavity, and a light adjustor movably coupling with the housing to selectively adjust a distance between the lens and the light source along a longitudinal axis direction of the housing for adjusting the illumination angles of the light beam without altering the fixed length of the housing. The flash light is adapted for selectively adjusting illumination angles to provide variety of light patterns.
Abstract:
A membrane for gas separation includes a porous support layer and a separation layer. The separation layer comprises a mixture of one or more saccharide derivatives and one or more homopolymers. The saccharide derivative(s) may have a cyclic structure with five or six ring atoms, or a linear structure, or may include monosaccharide derivatives which are bound via glycoside bonds, and the number of monosaccharides bound in this manner may be 2 to 1,000. A membrane can be produced by preparing a homogeneous solution which comprises a saccharide derivative and a homopolymer in a solvent; and pouring the homogenous solution onto a support layer. The membrane may be used in a gas separation module the operation of which makes use of the membrane.
Abstract:
Machine-readable media, methods, apparatus and system for testing a data communication performance of a network system are described. In some embodiments, an apparatus may comprise a first channel to synchronize a local clock of the apparatus with another local clock of another apparatus by communicating a synchronization message with the another apparatus through a first connection. The apparatus may further comprise a second channel to analyze a transceiving activity performed by the apparatus through a second connection and a timestamp of the transceiving activity, wherein the timestamp is made based upon the local clock.
Abstract:
A multi-state magnetoresistive random access memory unit (MRAM) having a plurality of memory cells, each of the cells are written to and read from, independently of other cells. The plurality of memory cells comprises a recording layer as a pinned magnetic layer and a read layer as an unpinned layer. The unpinned layer has a higher Curie point than the pinned layer. The pinned layer in an individual cell is heated to near its Curie point and a bit line current and a word line current is used to align the magnetization vector of the recording layer at a plurality of angles relative to the magnetization vector of the read layer.
Abstract:
In a computer database synchronization method, a first database with first object data and a second database with second object data are established in a personal computer and an electronic dictionary, respectively. First and second synchronization status tables are established for each of the first and second object data, respectively. The synchronization status tables are modified from a first state, indicating that the corresponding object data is synchronized with the first or second database, to a second state, indicating that the corresponding object data is not synchronized with the first or second database, when the corresponding object data is edited. Synchronizing of the first and second databases can begin when a communications link is established between the personal computer and the electronic dictionary. During synchronizing, the personal computer retrieves the second synchronization status tables from the electronic dictionary, and compares the second synchronization status tables with the corresponding first synchronization status tables. Based on the results of the comparison, the personal computer retrieves the corresponding second object data from the electronic dictionary, and updates the first database with the retrieved second object data, or transmits the corresponding first object data to the electronic dictionary for updating the second database with the transmitted first object data.
Abstract:
A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.
Abstract:
A II-VI compound semiconductor laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers forming the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A CdZnSe or other II-VI semiconductor quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes.
Abstract:
A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short-period strained-layer superlattice single quantum well active layer is positioned between the guiding layers. An Au electrode overlays the p-type guiding layer opposite the single quantum well active layer. The guiding layers have thicknesses which enable the substrate and Au electrode to confine the light beam generated by the device within the active layer and the guiding layers.
Abstract:
A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a conductive electrode layer characterized by a Fermi energy. The contact layer is doped with nitrogen shallow acceptors, characterized by a shallow acceptor energy, to a net acceptor concentration of at least 5.times.10.sup.17 cm.sup.-3. The contact layer also includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.
Abstract translation:ZnSe半导体器件包括具有p型和n型层的ZnSe pn结,以及与两层的欧姆接触。 与p型层的欧姆接触包括p型ZnSe晶体半导体接触层和以费米能为特征的导电电极层。 接触层掺杂有氮受体,其特征在于浅受主能量,至少为5×10 17 cm -3的净受体浓度。 接触层还包括在浅受主能量和电极层费米能量之间的足够的深能状态,以使得能够通过电荷载体进行级联隧穿。