公开(公告)号：US08368158B2

公开(公告)日：2013-02-05

申请号：US12758646

申请日：2010-04-12

Applicant: In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

Inventor： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

IPC: H01L31/0232

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract translation: 具有波导的图像传感器包括形成有光电二极管和外围电路区域的半导体基板; 形成在半导体衬底上的抗反射层; 形成在所述抗反射层上的绝缘层; 形成在所述绝缘层上并连接到所述半导体衬底的布线层; 堆叠在所述布线层上的至少一层间电介质; 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。

公开(公告)号：US20120301996A1

公开(公告)日：2012-11-29

申请号：US13563655

申请日：2012-07-31

Applicant: In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

Inventor： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

IPC: H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14634

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract translation: 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US20120295389A1

公开(公告)日：2012-11-22

申请号：US13563620

申请日：2012-07-31

Applicant: In-Gyun JEON ,  Se-Jung OH ,  Heui-Gyun AHN ,  Jun-Ho WON

Inventor： In-Gyun JEON ,  Se-Jung OH ,  Heui-Gyun AHN ,  Jun-Ho WON

IPC: H01L31/0232

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract translation: 具有波导的图像传感器包括形成有光电二极管和外围电路区域的半导体基板; 形成在半导体衬底上的抗反射层; 形成在所述抗反射层上的绝缘层; 形成在所述绝缘层上并连接到所述半导体衬底的布线层; 堆叠在所述布线层上的至少一层间电介质; 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。

公开(公告)号：US07898011B2

公开(公告)日：2011-03-01

申请号：US12160366

申请日：2006-12-07

Applicant: Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

Inventor： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

IPC: H01L31/062

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

Abstract: An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract translation: 用于减少串扰的图像传感器包括形成在最下层金属布线层的多个金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

公开(公告)号：US20110207258A1

公开(公告)日：2011-08-25

申请号：US13026963

申请日：2011-02-14

Applicant: Heui-Gyun Ahn ,  Se-Jung Oh ,  In-Gyun Jeon ,  Jun-Ho Won

Inventor： Heui-Gyun Ahn ,  Se-Jung Oh ,  In-Gyun Jeon ,  Jun-Ho Won

IPC: H01L31/0232 ,  H01L21/30 ,  H01L31/18

CPC classification number: H01L24/03 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/05 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/68372 ,  H01L2224/05093 ,  H01L2924/01046 ,  H01L2924/01078

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure includes: (a) a first process of bonding a device wafer and a handling wafer; (b) a second process of thinning a back side of an Si substrate which is formed on the device wafer, after the first process; (c) a third process of forming an anti-reflective layer and a PMD (preferential metal deposition) dielectric layer, after the second process; (d) a fourth process of forming vias on back sides of super contacts which are formed on the Si substrate, after the third process; and (e) a fifth process of forming a pad, after the fourth process.

Abstract translation: 用于在具有三维堆叠结构的晶片中形成焊盘的方法包括：（a）接合器件晶片和处理晶片的第一工艺; （b）在第一工序之后，使形成在器件晶片上的Si衬底的背面变薄的第二工序; （c）在第二工序之后形成抗反射层和PMD（优先金属沉积）介质层的第三工艺; （d）在第三工序之后在Si衬底上形成的超级触点的背面上形成通孔的第四工序; 和（e）在第四处理之后形成垫的第五工序。

公开(公告)号：US07714403B2

公开(公告)日：2010-05-11

申请号：US12305511

申请日：2007-06-14

Applicant: Byoung Su Lee ,  Jun Ho Won

Inventor： Byoung Su Lee ,  Jun Ho Won

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明，由于可以稳定地对背照式光电二极管的表面进行处理，因此可以将背照式光电二极管形成为具有低暗电流，对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 此外，可以通过采用其中光电二极管和逻辑电路分开形成在不同基板上的三维结构来制造高密度的图像传感器。

公开(公告)号：US08421134B2

公开(公告)日：2013-04-16

申请号：US12976851

申请日：2010-12-22

Applicant: In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

Inventor： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC: H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14634

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract translation: 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US20110156113A1

公开(公告)日：2011-06-30

申请号：US12976851

申请日：2010-12-22

Applicant: In - Gyun JEON ,  Se - Jung Oh ,  Heui - Gyun Ahn ,  Jun - Ho Won

Inventor： In - Gyun JEON ,  Se - Jung Oh ,  Heui - Gyun Ahn ,  Jun - Ho Won

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14634

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract translation: 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US20090224345A1

公开(公告)日：2009-09-10

申请号：US12305511

申请日：2007-06-14

Applicant: Byoung Su Lee ,  Jun Ho Won

Inventor： Byoung Su Lee ,  Jun Ho Won

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明，由于可以稳定地对背照式光电二极管的表面进行处理，因此可以将背照式光电二极管形成为具有低暗电流，对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 此外，可以通过采用其中光电二极管和逻辑电路分开形成在不同基板上的三维结构来制造高密度的图像传感器。

公开(公告)号：US20090058993A1

公开(公告)日：2009-03-05

申请号：US12281743

申请日：2007-02-07

Applicant: Byoung Su Lee ,  Jun Ho Won

Inventor： Byoung Su Lee ,  Jun Ho Won

IPC: H04N13/04 ,  H04N5/335

CPC classification number: H04N5/335 ,  H04N13/239

Abstract: A CMOS stereo camera for obtaining a three-dimensional image, in which two CMOS image sensors having the same characteristics are disposed on a single semiconductor substrate, is provided. The CMOS image sensors have image planes which are located on the same plane by disposing the two CMOS image sensors on the same semiconductor substrate. A digital signal processor (DSP) for processing a three-dimensional image is disposed between the CMOS image sensors. Optical axes of the CMOS image sensors are parallel with each other and orthogonal to the image planes. Since optical devices formed on the CMOS image sensors can be manufactured through the same processes, distortion of the optical axes between the two CMOS image sensors can be minimized.

Abstract translation: 提供一种用于获得三维图像的CMOS立体照相机，其中具有相同特性的两个CMOS图像传感器设置在单个半导体衬底上。 CMOS图像传感器具有通过将两个CMOS图像传感器布置在同一半导体衬底上而位于同一平面上的图像平面。 用于处理三维图像的数字信号处理器（DSP）设置在CMOS图像传感器之间。 CMOS图像传感器的光轴彼此平行并与图像平面正交。 由于可以通过相同的工艺制造形成在CMOS图像传感器上的光学器件，所以可以使两个CMOS图像传感器之间的光轴的失真最小化。