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    Air data sensor device
    2.
    发明授权
    Air data sensor device 有权
    空气数据传感器设备

    公开(公告)号：US09182257B2

    公开(公告)日：2015-11-10

    申请号：US13518011

    申请日：2010-12-17

    申请人： Young Min Park ,  Ki Jung Kwon ,  In Ho Choi

    发明人： Young Min Park ,  Ki Jung Kwon ,  In Ho Choi

    IPC分类号： G06F19/00 ,  G01D21/02 ,  G01D11/24 ,  G01P13/02

    CPC分类号： G01D21/02 ,  G01D11/245 ,  G01P13/025

    摘要： An air data sensor device using a flow around a cylinder is provided. The air data sensor device may include a sensor measurement unit which includes a sensor body provided in a cylindrical form including a hollow inside, a plurality of pressure measurement holes disposed on an outside of the sensor body, and a thermostat attached to one side of the sensor body, and a signal processing unit which includes a pressure sensor connected to the plurality of pressure measurement holes, and a microprocessor connected to the pressure sensor to perform calculation. A main pressure measurement hole having a high pressure value may be selected from the plurality of pressure measurement holes, pressure distribution may be calculated, and at least one of an angle of attack, a static pressure, and a total pressure may be calculated using the pressure distribution.

    摘要翻译： 提供了一种使用围绕气缸的流动的空气数据传感器装置。 空气数据传感器装置可以包括传感器测量单元，该传感器测量单元包括设置在中空内部的圆柱形状的传感器主体，设置在传感器主体外侧的多个压力测量孔和连接到传感器主体的一侧的恒温器 传感器体和信号处理单元，其包括连接到多个压力测量孔的压力传感器和连接到压力传感器以执行计算的微处理器。 可以从多个压力测量孔中选择具有高压值的主要压力测量孔，可以计算压力分布，并且可以使用下述中的至少一个来计算迎角，静压和总压力中的至少一个： 压力分布。

    Array and moat isolation structures and method of manufacture
    6.
    发明授权
    Array and moat isolation structures and method of manufacture 有权
    阵列和护城隔离结构及其制造方法

    公开(公告)号：US08673737B2

    公开(公告)日：2014-03-18

    申请号：US13274389

    申请日：2011-10-17

    申请人： Naoyoshi Kusaba ,  Oh-jung Kwon ,  Zhengwen Li ,  Hongwen Yan

    发明人： Naoyoshi Kusaba ,  Oh-jung Kwon ,  Zhengwen Li ,  Hongwen Yan

    IPC分类号： H01L21/76

    CPC分类号： H01L29/423 ,  H01L21/762 ,  H01L27/10805 ,  H01L27/10829 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/945

    摘要： An array or moat isolation structure for eDRAM and methods of manufacture is provided. The method includes forming a deep trench for a memory array and an isolation region. The method includes forming a node dielectric on exposed surfaces of the deep trench for the memory array and the isolation region. The method includes filling remaining portions of the deep trench for the memory array with a metal, and lining the deep trench of the isolation region with the metal. The method includes filling remaining portions of the deep trench for the isolation region with a material, on the metal within the deep trench for the memory array. The method includes recessing the metal within the deep trench for the memory array and the isolation region. The metal in the deep trench of the memory array is recessed to a greater depth than the metal in the isolation region.

    摘要翻译： 提供了一种用于eDRAM的阵列或护城隔离结构及其制造方法。 该方法包括形成用于存储器阵列的深沟槽和隔离区域。 该方法包括在用于存储器阵列和隔离区域的深沟槽的暴露表面上形成节点电介质。 该方法包括用金属填充用于存储器阵列的深沟槽的剩余部分，并用金属衬里隔离区域的深沟槽。 该方法包括用用于存储器阵列的深沟槽内的金属上的材料填充用于隔离区域的深沟槽的剩余部分。 该方法包括使用于存储器阵列和隔离区域的深沟槽内的金属凹陷。 存储器阵列的深沟槽中的金属凹陷到比隔离区域中的金属更深的深度。

    Headend system for downloadable conditional access service and method of operating the same
    8.
    发明授权
    Headend system for downloadable conditional access service and method of operating the same 有权
    用于可下载条件访问服务的头端系统及其操作方法

    公开(公告)号：US08533458B2

    公开(公告)日：2013-09-10

    申请号：US12246663

    申请日：2008-10-07

    申请人： Young Ho Jeong ,  Soon Choul Kim ,  Heejeong Kim ,  Eun Jung Kwon ,  Han Seung Koo ,  O Hyung Kwon ,  Soo In Lee

    发明人： Young Ho Jeong ,  Soon Choul Kim ,  Heejeong Kim ,  Eun Jung Kwon ,  Han Seung Koo ,  O Hyung Kwon ,  Soo In Lee

    IPC分类号： H04L29/06

    CPC分类号： H04L9/321 ,  G06F21/33 ,  H04L9/083 ,  H04L9/3273 ,  H04L2209/76 ,  H04N7/1675 ,  H04N21/2541 ,  H04N21/42623 ,  H04N21/63345 ,  H04N21/8193 ,  H04N21/835

    摘要： A method of operating a headend system for a downloadable conditional access service, the method including: receiving, by an Authentication Proxy (AP) server, basic authentication information from a Downloadable Conditional Access System (DCAS) host, the basic authentication information being required to authenticate the DCAS host; transmitting, by the AP server, the basic authentication information to an external trusted authority device which authenticates the DCAS host; generating, by the AP server, a session key for encrypting/decrypting a secure micro client using a session key sharing factor; obtaining, by the AP server, download-related information of the secure micro client from a DCAS Provisioning Server (DPS); and commanding, by the AP server, an Integrated Personalization System (IPS) server to download the secure micro client to the DCAS host based on the download-related information, the secure micro client being encrypted by the session key.

    摘要翻译： 一种操作用于可下载条件访问服务的头端系统的方法，所述方法包括：由认证代理（AP）服务器从可下载条件访问系统（DCAS）主机接收基本认证信息，所述基本认证信息需要 验证DCAS主机; 由AP服务器将基本认证信息发送给认证DCAS主机的外部可信管理设备; 由AP服务器生成用于使用会话密钥共享因子加密/解密安全微客户端的会话密钥; 由AP服务器从DCAS配给服务器（DPS）获取安全微客户端的下载相关信息; 并且由AP服务器命令集成个性化系统（IPS）服务器，以便基于下载相关信息将安全微客户端下载到DCAS主机，安全微客户端被会话密钥加密。

    ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE
    9.
    发明申请
    ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE 有权
    阵列和滑行隔离结构及其制造方法

    公开(公告)号：US20130093043A1

    公开(公告)日：2013-04-18

    申请号：US13274389

    申请日：2011-10-17

    申请人： Naoyoshi KUSABA ,  Oh-jung KWON ,  Zhengwen LI ,  Hongwen YAN

    发明人： Naoyoshi KUSABA ,  Oh-jung KWON ,  Zhengwen LI ,  Hongwen YAN

    IPC分类号： H01L29/02 ,  H01L21/302

    CPC分类号： H01L29/423 ,  H01L21/762 ,  H01L27/10805 ,  H01L27/10829 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/945

    摘要： An array or moat isolation structure for eDRAM and methods of manufacture is provided. The method includes forming a deep trench for a memory array and an isolation region. The method includes forming a node dielectric on exposed surfaces of the deep trench for the memory array and the isolation region. The method includes filling remaining portions of the deep trench for the memory array with a metal, and lining the deep trench of the isolation region with the metal. The method includes filling remaining portions of the deep trench for the isolation region with a material, on the metal within the deep trench for the memory array. The method includes recessing the metal within the deep trench for the memory array and the isolation region. The metal in the deep trench of the memory array is recessed to a greater depth than the metal in the isolation region.

    摘要翻译： 提供了一种用于eDRAM的阵列或护城隔离结构及其制造方法。 该方法包括形成用于存储器阵列的深沟槽和隔离区域。 该方法包括在用于存储器阵列和隔离区域的深沟槽的暴露表面上形成节点电介质。 该方法包括用金属填充用于存储器阵列的深沟槽的剩余部分，并用金属衬里隔离区域的深沟槽。 该方法包括用用于存储器阵列的深沟槽内的金属上的材料填充用于隔离区域的深沟槽的剩余部分。 该方法包括使用于存储器阵列和隔离区域的深沟槽内的金属凹陷。 存储器阵列的深沟槽中的金属凹陷到比隔离区域中的金属更深的深度。