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    Light sensing panel and display apparatus having the same
    2.
    发明授权
    Light sensing panel and display apparatus having the same 有权
    感光面板及其显示装置

    公开(公告)号：US08717336B2

    公开(公告)日：2014-05-06

    申请号：US13346849

    申请日：2012-01-10

    申请人： Ki-Hun Jeong ,  Woongkwon Kim ,  Kun-Wook Han ,  Daecheol Kim ,  Sungryul Kim ,  Sungjin Mun ,  Jung suk Bang ,  Byeonghoon Cho

    发明人： Ki-Hun Jeong ,  Woongkwon Kim ,  Kun-Wook Han ,  Daecheol Kim ,  Sungryul Kim ,  Sungjin Mun ,  Jung suk Bang ,  Byeonghoon Cho

    IPC分类号： G09G5/00

    CPC分类号： G06F3/0412 ,  G06F3/042 ,  G09G3/3696 ,  G09G2360/141 ,  G09G2360/144

    摘要： A light sensing panel includes sensors arranged in rows and columns, where the sensors receive a first bias voltage and a second bias voltage and output light sensing signals based on light incident thereto; first and second bias lines which transfers the first and second bias voltages, respectively, to the sensors, where each of the first and second bias lines includes a main line and sub lines diverged from the main line and arranged in a second direction corresponding to the columns;, where the sub lines of the first and second bias lines are alternately arranged, and where when two adjacent sub lines are shorted, the shorted sub line of the first bias line is separated from the main line of the first bias line.

    摘要翻译： 光感测面板包括以行和列布置的传感器，其中传感器接收第一偏置电压和第二偏置电压，并且基于入射到其上的光输出光感测信号; 分别将第一偏置电压和第二偏置电压传送到传感器的第一和第二偏置线，其中第一和第二偏置线中的每一个包括主线和从主线发散的子线，并且沿对应于 列，其中第一和第二偏置线的子线交替布置，并且当两个相邻子线短路时，第一偏置线的短路子线与第一偏置线的主线分离。

    Display substrate and method of manufacturing the same
    4.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号：US08581253B2

    公开(公告)日：2013-11-12

    申请号：US12904507

    申请日：2010-10-14

    申请人： Jung-Suk Bang ,  Byeong-Hoon Cho ,  Sung-Hoon Yang ,  Suk-Won Jung ,  Ki-Hun Jeong

    发明人： Jung-Suk Bang ,  Byeong-Hoon Cho ,  Sung-Hoon Yang ,  Suk-Won Jung ,  Ki-Hun Jeong

    IPC分类号： H01L29/10 ,  H01L29/04 ,  H01L31/00

    CPC分类号： G02F1/136209 ,  G02F2001/13312 ,  G02F2203/11

    摘要： A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.

    摘要翻译： 显示基板包括形成在基底基板上的第一遮光图案，第一开关元件，形成在基底基板上的第二遮光图案和第一感测元件。 第一遮光图案被配置为阻挡可见光并透射红外光。 第一开关元件包括第一半导体图案，第一源极电极，第一漏极电极和第一栅极电极。 第二遮光图案被配置为阻挡可见光并透射红外光。 第一感测元件被配置为检测红外光，并且包括第二半导体图案，第二源电极，第二漏电极和第二栅电极。

    THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    薄片晶体管基板及其制造方法

    公开(公告)号：US20120003768A1

    公开(公告)日：2012-01-05

    申请号：US13231225

    申请日：2011-09-13

    申请人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

    发明人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

    IPC分类号： H01L33/16

    CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288

    摘要： A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

    摘要翻译： 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

    Thin film transistor substrate and manufacturing method thereof
    9.
    发明授权
    Thin film transistor substrate and manufacturing method thereof 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US08044405B2

    公开(公告)日：2011-10-25

    申请号：US12429388

    申请日：2009-04-24

    申请人： Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

    发明人： Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

    IPC分类号： H01L29/12 ,  H01L21/336

    CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288

    摘要： A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

    摘要翻译： 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。