公开(公告)号：US07074706B2

公开(公告)日：2006-07-11

申请号：US11112538

申请日：2005-04-22

申请人： Junichi Aoyama ,  Toshio Kobayashi

发明人： Junichi Aoyama ,  Toshio Kobayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L23/5221 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

公开(公告)号：US06876079B2

公开(公告)日：2005-04-05

申请号：US10082576

申请日：2002-02-25

申请人： Junichi Aoyama

发明人： Junichi Aoyama

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/76885 ,  H01L21/28562 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

公开(公告)号：US20050191841A1

公开(公告)日：2005-09-01

申请号：US11112538

申请日：2005-04-22

申请人： Junichi Aoyama ,  Toshio Kobayashi

发明人： Junichi Aoyama ,  Toshio Kobayashi

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L23/5221 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

摘要翻译： 本发明提供一种其中可以解决诸如中空布线技术中的热扩散缺陷的问题的半导体器件。 在半导体装置中，在形成于基板上的布线之间形成间隙，在0℃的空气填充导热率等于或高于3倍的气体的间隙。

公开(公告)号：US20050167845A1

公开(公告)日：2005-08-04

申请号：US11091840

申请日：2005-03-28

申请人： Junichi Aoyama

发明人： Junichi Aoyama

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76885 ,  H01L21/28562 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

公开(公告)号：US20070023655A1

公开(公告)日：2007-02-01

申请号：US11477085

申请日：2006-06-28

申请人： Kentaro Nishikata ,  Yutaka Saijo ,  Shigeru Kakinuma ,  Junichi Aoyama ,  Satoshi Ohashi

发明人： Kentaro Nishikata ,  Yutaka Saijo ,  Shigeru Kakinuma ,  Junichi Aoyama ,  Satoshi Ohashi

IPC分类号： G21K7/00

CPC分类号： H01J37/228 ,  H01J37/244 ,  H01J37/256 ,  H01J2237/2445 ,  H01J2237/24485 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/2808

摘要： An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement. A sample measuring device in accordance with this invention is to measure light generated from a sample W by irradiating electron beams EB on the sample W, and comprises a electron optical column part 23 that converges the electron beams EB, and a light collecting mirror part 31 that is arranged between the electron optical column part 23 and the sample W and that has an energy beam path 312 to pass the electron beams EB converged by the electron optical column part 23 and to irradiate the electron beams EB on the sample W and a mirror face 311 whose focal point F is set on an axis of the energy beam path 312 and that collects the light L generated from the sample W by means of the mirror face 311, wherein the light collecting mirror part 31 is supported by the electron optical column part 23 so that the axis of the electron beams EB coincides with the focal point F.

摘要翻译： 本发明的目的是使得能够容易地调节照射的能量束的位置和聚光镜部的焦点的位置，并且以简单的布置来防止由于振动引起的聚光部的位移 。 根据本发明的样品测量装置是通过在样品W上照射电子束EB来测量由样品W产生的光，并且包括会聚电子束EB的电子光学柱部分23和聚光反射镜部分31 其布置在电子光学柱部分23和样品W之间，并且具有能量束路径312以使由电子光学柱部分23会聚的电子束EB照射到样品W上的电子束EB和反射镜 其焦点F设置在能量束路径312的轴上并且通过镜面311收集从样本W产生的光L的面311，其中聚光镜部31由电子光学柱支撑 部分23，使得电子束EB的轴线与焦点F一致。

公开(公告)号：US06765297B2

公开(公告)日：2004-07-20

申请号：US10107568

申请日：2002-03-27

申请人： Junichi Aoyama ,  Toshio Kobayashi

发明人： Junichi Aoyama ,  Toshio Kobayashi

IPC分类号： H01L2348

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L23/5221 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

摘要翻译： 能够解决中空布线技术中的热扩散缺陷等问题的半导体装置。 在半导体装置中，在形成于基板上的布线之间形成间隙，在0℃的空气填充导热率等于或高于3倍的气体的间隙。

公开(公告)号：US06207585B1

公开(公告)日：2001-03-27

申请号：US09128545

申请日：1998-08-04

申请人： Toshiaki Hasegawa ,  Junichi Aoyama

发明人： Toshiaki Hasegawa ,  Junichi Aoyama

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/402 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31051 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76837 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of forming a cap insulating film at a high reliability prior to heat-treatment for removing an —OH group from a planarization insulating film (APL film) which is excellent in a gap fill ability and global planarization ability and which is formed by a liquid phase CVD process. The (lower) cap insulating film is formed by plasma CVD using a source gas containing an inorganic silane compound gas, O2 and a hydrocarbon; or an organic silane compound gas and O2. With this method, the cap insulating film can be formed without occurrence of harmful ammonia and particles in plasma.

摘要翻译： 公开了一种在热处理之前以高可靠性形成帽绝缘膜的方法，用于从间隙填充能力和全局平坦化能力优异的平坦化绝缘膜（APL膜）中除去-OH基团，并形成 通过液相CVD工艺。 （下）帽绝缘膜通过使用含有无机硅烷化合物气体O 2和烃的源气体的等离子体CVD形成; 或有机硅烷化合物气体和O 2。 通过该方法，可以形成帽绝缘膜，而不会在等离子体中产生有害的氨和颗粒。

公开(公告)号：US07271487B2

公开(公告)日：2007-09-18

申请号：US11091841

申请日：2005-03-28

申请人： Junichi Aoyama

发明人： Junichi Aoyama

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/76885 ,  H01L21/28562 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

摘要翻译： 本发明是为了提高半导体装置的配线工序的成品率和可靠性。 当上层的Al布线通过连接柱连接到嵌入在层间绝缘膜上形成的沟槽中的下层上的Al布线上时，具有宽度大于Al布线宽度的开口的生长抑制膜 形成在层间绝缘膜和Al布线上。 在这种条件下，通过选择性CVD法等来生长Al等。 因此，连接柱以相对于Al布线的自匹配方式形成在开口内的Al布线上。

公开(公告)号：US07064441B2

公开(公告)日：2006-06-20

申请号：US11091840

申请日：2005-03-28

申请人： Junichi Aoyama

发明人： Junichi Aoyama

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76885 ,  H01L21/28562 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

公开(公告)号：US07012023B2

公开(公告)日：2006-03-14

申请号：US11050376

申请日：2005-02-03

申请人： Junichi Aoyama

发明人： Junichi Aoyama

IPC分类号： H01L21/44 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76885 ,  H01L21/28562 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.