Method for manufacturing over-current protection device
    2.
    发明授权
    Method for manufacturing over-current protection device 有权
    制造过流保护装置的方法

    公开(公告)号:US07892392B2

    公开(公告)日:2011-02-22

    申请号:US12041322

    申请日:2008-03-03

    摘要: A method for manufacturing an over-current protection device comprises a step of providing at least one current sensitive device and a step of pressing. The current sensitive device comprises a first electrode foil, a second electrode foil and a PTC conductive layer physically laminated between the first and second electrode foils. The pressing step is to press the current sensitive device at a predetermined temperature, thereby generating at least one overflow portion at sides of the PTC conductive layer to form the over-current protection device. The predetermined temperature is higher than the softening temperature of the PTC conductive layer. The over-current protection devices manufactured according to the present invention have superior resistance distribution.

    摘要翻译: 一种用于制造过电流保护装置的方法包括提供至少一个电流敏感装置和按压步骤的步骤。 电流敏感器件包括物理层压在第一和第二电极箔之间的第一电极箔,第二电极箔和PTC导电层。 按压步骤是将电流敏感器件按预定温度按压,从而在PTC导电层的侧面产生至少一个溢出部分以形成过电流保护器件。 预定温度高于PTC导电层的软化温度。 根据本发明制造的过电流保护装置具有优异的电阻分布。

    LED apparatus with temperature control function
    3.
    发明授权
    LED apparatus with temperature control function 有权
    LED装置具有温度控制功能

    公开(公告)号:US07817009B2

    公开(公告)日:2010-10-19

    申请号:US11484386

    申请日:2006-07-11

    IPC分类号: H01C3/04

    摘要: An LED apparatus with temperature self-regulating, over-temperature protection, and over-current protection function comprises an LED chip, a heat dissipation plate, a heat conductive layer and a temperature control device. The heat dissipation and the heat conductive layer disposed thereon carry the LED chip and dissipate the heat generated from the LED chip that is connected to an electric power source for luminance. The temperature control device exhibiting PTC behavior is electrically connected between the LED chip and the electric power source in series, and the distance between the LED chip and the temperature control device is less than 3 cm. The heat conductive layer can consist of polymeric dielectric material and has a heat conduction coefficient larger than 1.0 W/mK at 25° C.

    摘要翻译: 具有温度自调节,过温保护和过电流保护功能的LED装置包括LED芯片,散热板,导热层和温度控制装置。 散热部和导热层配置在该LED芯片上,散发从连接于电源的LED芯片产生的热量以发光。 表现为PTC行为的温度控制装置串联地电连接在LED芯片和电源之间,并且LED芯片和温度控制装置之间的距离小于3cm。 导热层可以由聚合物电介质材料组成,并且在25℃下具有大于1.0W / mK的导热系数

    METHOD FOR MANUFACTURING OVER-CURRENT PROTECTION DEVICE
    4.
    发明申请
    METHOD FOR MANUFACTURING OVER-CURRENT PROTECTION DEVICE 有权
    制造过流保护装置的方法

    公开(公告)号:US20080289751A1

    公开(公告)日:2008-11-27

    申请号:US12041322

    申请日:2008-03-03

    IPC分类号: B32B38/04 B32B37/04

    摘要: A method for manufacturing an over-current protection device comprises a step of providing at least one current sensitive device and a step of pressing. The current sensitive device comprises a first electrode foil, a second electrode foil and a PTC conductive layer physically laminated between the first and second electrode foils. The pressing step is to press the current sensitive device at a predetermined temperature, thereby generating at least one overflow portion at sides of the PTC conductive layer to form the over-current protection device. The predetermined temperature is higher than the softening temperature of the PTC conductive layer. The over-current protection devices manufactured according to the present invention have superior resistance distribution.

    摘要翻译: 一种用于制造过电流保护装置的方法包括提供至少一个电流敏感装置和按压步骤的步骤。 电流敏感器件包括物理层压在第一和第二电极箔之间的第一电极箔,第二电极箔和PTC导电层。 按压步骤是将电流敏感器件按预定温度按压,从而在PTC导电层的侧面产生至少一个溢出部分以形成过电流保护器件。 预定温度高于PTC导电层的软化温度。 根据本发明制造的过电流保护装置具有优异的电阻分布。

    High voltage over-current protection device
    5.
    发明授权
    High voltage over-current protection device 有权
    高压过流保护装置

    公开(公告)号:US07391295B2

    公开(公告)日:2008-06-24

    申请号:US11691672

    申请日:2007-03-27

    IPC分类号: H01C7/00 H01C7/13

    CPC分类号: H01C7/027

    摘要: A high voltage over-current protection device includes a positive temperature coefficient (PTC) electrically conductive heat-dissipation layer and two metal electrodes. The PTC electrically conductive heat-dissipation layer includes at least one polymer, an electrically conductive filler, and a heat conductive filler. Due to the high thermal conductivity of the heat conductive filler (with a coefficient of thermal conductivity higher than 1 W/mK), the high voltage over-current protection device has a high thermal conduction characteristic, and the withstand voltage thereof can be substantially uniformly distributed in the PTC electrically conductive heat-dissipation layer to enhance its high voltage withstanding characteristic.

    摘要翻译: 高电压过电流保护装置包括正温度系数(PTC)导电散热层和两个金属电极。 PTC导电散热层包括至少一种聚合物,导电填料和导热填料。 由于导热性填料的热导率高(导热系数高于1W / mK),所以高压过电流保护装置具有高导热特性,其耐电压基本上均匀 分布在PTC导电散热层中,以提高其耐高压特性。

    Light emitting diode apparatus
    6.
    发明申请
    Light emitting diode apparatus 有权
    发光二极管装置

    公开(公告)号:US20080111505A1

    公开(公告)日:2008-05-15

    申请号:US11656224

    申请日:2007-01-19

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0872

    摘要: A light emitting diode (LED) apparatus with temperature control and current regulation functions is provided. The LED apparatus includes at least one LED die and at least one temperature control and current regulation (TCCR) device. The TCCR device is electrically connected between the LED die and a power source, and is placed within an effective temperature sensing distance of the LED die, so as to sense temperature changes of the LED die. The resistance of the TCCR device is proportional to the temperature in a range of 25° C. to 85° C., i.e., the resistance increases with temperature. Moreover, the resistance difference of the TCCR device between 50° C. and 80° C. is greater than or equal to 100 mΩ.

    摘要翻译: 提供了具有温度控制和电流调节功能的发光二极管(LED)装置。 LED装置包括至少一个LED管芯和至少一个温度控制和电流调节(TCCR)器件。 TCCR器件电连接在LED管芯和电源之间,并被放置在LED管芯的有效温度感测距离内,以便感测LED管芯的温度变化。 TCCR器件的电阻与25℃至85℃范围内的温度成比例,即电阻随温度升高。 此外,TCCR器件在50°C和80°C之间的电阻差大于或等于100 mOmega。

    Heat dissipation substrate for electronic device
    7.
    发明申请
    Heat dissipation substrate for electronic device 审中-公开
    电子元件散热基板

    公开(公告)号:US20080057333A1

    公开(公告)日:2008-03-06

    申请号:US11803039

    申请日:2007-05-11

    IPC分类号: B21D39/00

    摘要: A heat dissipation substrate for an electronic device comprises a first metal layer, a second metal layer, and a thermally conductive polymer dielectric insulating layer. A surface of the first metal layer carries the electronic device, e.g., a light-emitting diode (LED) device. The thermally conductive polymer dielectric insulating layer is stacked between the first metal layer and the second metal layer in a physical contact manner, and interfaces therebetween include at least one micro-rough surface with a roughness Rz larger than 7.0. The micro-rough surface includes a plurality of nodular projections, and the grain sizes of the nodular projections mainly are in a range of 0.1-100 μm. The heat dissipation substrate has a thermal conductivity larger than 1.0 W/m·K, and a thickness smaller than 0.5 mm, and comprises (1) a fluorine-containing polymer with a melting point higher than 150° C. and a volume percentage in a range of 30-60%, and (2) thermally conductive filler dispersed in the fluorine-containing polymer and having a volume percentage in a range of 40-70%.

    摘要翻译: 电子器件的散热基板包括第一金属层,第二金属层和导热聚合物介电绝缘层。 第一金属层的表面承载电子装置,例如发光二极管(LED)装置。 导热性聚合物介电绝缘层以物理接触的方式堆叠在第一金属层和第二金属层之间,并且其间的界面包括至少一个粗糙度Rz大于7.0的微粗糙表面。 微粗糙表面包括多个结节状突起,并且结节状突起的粒径主要在0.1〜100μm的范围内。 散热基板的热导率大于1.0W / mK,厚度小于0.5mm,其特征在于,包含:(1)熔点高于150℃的含氟聚合物, 为30〜60%,(2)分散在含氟聚合物中的导热性填料,体积百分比为40〜70%。

    Over-current protection device
    8.
    发明授权
    Over-current protection device 有权
    过电流保护装置

    公开(公告)号:US07286038B1

    公开(公告)日:2007-10-23

    申请号:US11654842

    申请日:2007-01-18

    IPC分类号: H01C7/00 H01C7/13

    CPC分类号: H01C7/027 H01C1/084 H01C7/021

    摘要: An over-current protection device comprises two metal foils and a positive temperature coefficient (PTC) material layer laminated between the two metal foils. The PTC material layer includes: (1) a polymer substrate, being 35-60% by volume of the PTC material layer and including a fluorine-containing crystalline polymer with a melting point higher than 150° C., e.g., polyvinylidine fluoride (PVDF); and (2) a conductive ceramic filler (e.g., titanium carbide) distributed in the polymer substrate. The conductive ceramic filler is 40-65% by volume of the PTC material layer, and has a volume resistivity less than 500 μΩ-cm. The volume resistivity of the PTC material layer is less than 0.1 Ω-cm, and the ratio of the hold current of the PTC material layer at 25° C. to the area of the PTC material layer is between 0.05 and 0.2 A/mm2.

    摘要翻译: 过电流保护装置包括两个金属箔和层压在两个金属箔之间的正温度系数(PTC)材料层。 PTC材料层包括:(1)聚合物基材,其为PTC材料层的35-60体积%,并且包含熔点高于150℃的含氟结晶聚合物,例如聚偏二氟乙烯(PVDF) ); 和(2)分布在聚合物基材中的导电陶瓷填料(例如碳化钛)。 导电陶瓷填料为PTC材料层的体积电阻率为40-65%,体积电阻率小于500μΩ·cm。 PTC材料层的体积电阻率小于0.1Ω·cm,并且PTC材料层在25℃下的保持电流与PTC材料层的面积之比在0.05和0.2A / SUP> 2

    Light emitting diode apparatus
    9.
    发明授权
    Light emitting diode apparatus 有权
    发光二极管装置

    公开(公告)号:US08198642B2

    公开(公告)日:2012-06-12

    申请号:US11656224

    申请日:2007-01-19

    IPC分类号: H01L33/00

    CPC分类号: H05B33/0872

    摘要: A light emitting diode (LED) apparatus with temperature control and current regulation functions is provided. The LED apparatus includes at least one LED die and at least one temperature control and current regulation (TCCR) device. The TCCR device is electrically connected between the LED die and a power source, and is placed within an effective temperature sensing distance of the LED die, so as to sense temperature changes of the LED die. The resistance of the TCCR device is proportional to the temperature in a range of 25° C. to 85° C., i.e., the resistance increases with temperature. Moreover, the resistance difference of the TCCR device between 50° C. and 80° C. is greater than or equal to 100 mΩ.

    摘要翻译: 提供了具有温度控制和电流调节功能的发光二极管(LED)装置。 LED装置包括至少一个LED管芯和至少一个温度控制和电流调节(TCCR)器件。 TCCR器件电连接在LED管芯和电源之间,并被放置在LED管芯的有效温度感测距离内,以便感测LED管芯的温度变化。 TCCR器件的电阻与25℃至85℃范围内的温度成比例,即电阻随温度升高。 此外,TCCR器件在50℃和80℃之间的电阻差大于或等于100mΩ。

    LED APPARATUS
    10.
    发明申请
    LED APPARATUS 审中-公开
    LED装置

    公开(公告)号:US20080272390A1

    公开(公告)日:2008-11-06

    申请号:US11969507

    申请日:2008-01-04

    IPC分类号: H01L33/00

    摘要: An LED apparatus comprises a base, an LED device, an electrode member and an insulation layer. The base has a bevel side to be embedded with a corresponding receiving base for electrical conduction of an electrode (e.g., a negative electrode). The LED device is placed on an upper surface of the base. The electrode member comprising a metal rod and an electrode plate is connected to the LED device for electrical conduction of an electrode (e.g., a positive electrode). The insulation layer is placed between the electrode plate of the electrode member and the base for electrical insulation. The bevel side of the base can be modified as desired, and is generally less than 10 degrees, and preferably less than 5 degrees, and may be less than 3 degrees if needed.

    摘要翻译: LED装置包括基座,LED器件,电极部件和绝缘层。 底座具有倾斜侧面,以嵌入相应的用于电极(例如负极)的导电的接收基座。 LED装置放置在基座的上表面上。 包括金属棒和电极板的电极构件连接到LED器件,用于电极(例如,正电极)的导电。 绝缘层位于电极部件的电极板和电绝缘基板之间。 底座的斜面可根据需要进行修改,如果需要,通常小于10度,优选小于5度,并且可小于3度。