High Power Lamp and LED Device Thereof
    1.
    发明申请
    High Power Lamp and LED Device Thereof 审中-公开
    大功率灯及其LED灯具

    公开(公告)号:US20080174247A1

    公开(公告)日:2008-07-24

    申请号:US11755196

    申请日:2007-05-30

    IPC分类号: H05B37/02 H01J7/44

    摘要: A high-power LED lamp comprises a cuplike lamp housing, an LED device, an adapter and a circuit board. The inner surface of the cuplike lamp housing is a reflective curved surface for reflecting the light from the LED device disposed at the bottom the cuplike lamp housing, so as to improve the lighting efficiency. The position of the LED device has the relation: 0.05

    摘要翻译: 大功率LED灯包括杯状灯壳体,LED器件,适配器和电路板。 杯状灯壳体的内表面是用于反射设置在杯状灯壳体底部的LED装置的光的反射曲面,以提高照明效率。 LED装置的位置具有以下关系:0.05 / H <0.35,其中H T是总深度 杯形灯壳体,H L1是LED器件的表面与杯状灯壳体的底部之间的距离。 适配器被配置为固定LED设备,并且电路板被配置为向LED设备提供电源。 LED器件是包括LED封装器件,环形元件,电极板和绝缘胶层的堆叠结构。 所述LED封装装置包括至少一个LED管芯,所述环部件设置在所述LED封装器件的下方,所述电极板设置在所述环部件的下方,并且在其中心设置有杆。 杆穿过环构件并连接到LED封装装置的底部。 绝缘胶层设置在电极板和环形部件之间用于正极和负极之间的绝缘。

    LED APPARATUS
    2.
    发明申请
    LED APPARATUS 审中-公开
    LED装置

    公开(公告)号:US20080272390A1

    公开(公告)日:2008-11-06

    申请号:US11969507

    申请日:2008-01-04

    IPC分类号: H01L33/00

    摘要: An LED apparatus comprises a base, an LED device, an electrode member and an insulation layer. The base has a bevel side to be embedded with a corresponding receiving base for electrical conduction of an electrode (e.g., a negative electrode). The LED device is placed on an upper surface of the base. The electrode member comprising a metal rod and an electrode plate is connected to the LED device for electrical conduction of an electrode (e.g., a positive electrode). The insulation layer is placed between the electrode plate of the electrode member and the base for electrical insulation. The bevel side of the base can be modified as desired, and is generally less than 10 degrees, and preferably less than 5 degrees, and may be less than 3 degrees if needed.

    摘要翻译: LED装置包括基座,LED器件,电极部件和绝缘层。 底座具有倾斜侧面,以嵌入相应的用于电极(例如负极)的导电的接收基座。 LED装置放置在基座的上表面上。 包括金属棒和电极板的电极构件连接到LED器件,用于电极(例如,正电极)的导电。 绝缘层位于电极部件的电极板和电绝缘基板之间。 底座的斜面可根据需要进行修改,如果需要,通常小于10度,优选小于5度,并且可小于3度。

    Over-current protection device
    3.
    发明授权
    Over-current protection device 有权
    过电流保护装置

    公开(公告)号:US07352272B2

    公开(公告)日:2008-04-01

    申请号:US11644364

    申请日:2006-12-22

    IPC分类号: H01C7/10

    CPC分类号: H01B1/24 H01B1/22

    摘要: An over-current protection device comprises two metal foils and a PTC material layer laminated between the two metal foils. The PTC material layer essentially comprises a polymer matrix and a conductive filler. The polymer matrix at least comprises a first crystalline polymer, e.g., LDPE, and a second crystalline polymer, e.g., PVDF, in which the melting temperature of the second crystalline polymer subtracting the melting temperature of the first crystalline polymer is equal to or more than 50° C. The conductive filler is selected from metallic grain of a volumetric resistivity less than 500 μΩ-cm, and is distributed in the polymer matrix. The initial volumetric resistivity of the PTC material layer is less than 0.1Ω-cm, and the trip temperature of the PTC material layer at which the resistance thereof increases to 1000 times the initial resistance subtracting the melting temperature of the first crystalline polymer is less than 15° C.

    摘要翻译: 过电流保护装置包括两个金属箔和层压在两个金属箔之间的PTC材料层。 PTC材料层基本上包括聚合物基质和导电填料。 聚合物基质至少包含第一结晶聚合物,例如LDPE和第二结晶聚合物,例如PVDF,其中第二结晶聚合物的熔融温度减去第一结晶聚合物的熔融温度等于或大于 50℃。导电填料选自体积电阻率小于500μΩ·cm的金属颗粒,并分布在聚合物基质中。 PTC材料层的初始体积电阻率小于0.1OmΩ-cm,其电阻值增加到初始电阻的1000倍的PTC材料层的跳闸温度减去第一结晶聚合物的熔融温度小于 15°C

    Over-current protection device
    4.
    发明申请
    Over-current protection device 有权
    过电流保护装置

    公开(公告)号:US20070187655A1

    公开(公告)日:2007-08-16

    申请号:US11644364

    申请日:2006-12-22

    IPC分类号: H01B1/24

    CPC分类号: H01B1/24 H01B1/22

    摘要: An over-current protection device comprises two metal foils and a PTC material layer laminated between the two metal foils. The PTC material layer essentially comprises a polymer matrix and a conductive filler. The polymer matrix at least comprises a first crystalline polymer, e.g., LDPE, and a second crystalline polymer, e.g., PVDF, in which the melting temperature of the second crystalline polymer subtracting the melting temperature of the first crystalline polymer is equal to or more than 50° C. The conductive filler is selected from metallic grain of a volumetric resistivity less than 500 μΩ-cm, and is distributed in the polymer matrix. The initial volumetric resistivity of the PTC material layer is less than 0.1Ω-cm, and the trip temperature of the PTC material layer at which the resistance thereof increases to 1000 times the initial resistance subtracting the melting temperature of the first crystalline polymer is less than 15° C.

    摘要翻译: 过电流保护装置包括两个金属箔和层压在两个金属箔之间的PTC材料层。 PTC材料层基本上包括聚合物基质和导电填料。 聚合物基质至少包含第一结晶聚合物,例如LDPE和第二结晶聚合物,例如PVDF,其中第二结晶聚合物的熔融温度减去第一结晶聚合物的熔融温度等于或大于 50℃。导电填料选自体积电阻率小于500μΩ·cm的金属颗粒,并分布在聚合物基质中。 PTC材料层的初始体积电阻率小于0.1OmΩ-cm,其电阻值增加到初始电阻的1000倍的PTC材料层的跳闸温度减去第一结晶聚合物的熔融温度小于 15°C

    Light emitting diode apparatus
    5.
    发明授权
    Light emitting diode apparatus 有权
    发光二极管装置

    公开(公告)号:US08198642B2

    公开(公告)日:2012-06-12

    申请号:US11656224

    申请日:2007-01-19

    IPC分类号: H01L33/00

    CPC分类号: H05B33/0872

    摘要: A light emitting diode (LED) apparatus with temperature control and current regulation functions is provided. The LED apparatus includes at least one LED die and at least one temperature control and current regulation (TCCR) device. The TCCR device is electrically connected between the LED die and a power source, and is placed within an effective temperature sensing distance of the LED die, so as to sense temperature changes of the LED die. The resistance of the TCCR device is proportional to the temperature in a range of 25° C. to 85° C., i.e., the resistance increases with temperature. Moreover, the resistance difference of the TCCR device between 50° C. and 80° C. is greater than or equal to 100 mΩ.

    摘要翻译: 提供了具有温度控制和电流调节功能的发光二极管(LED)装置。 LED装置包括至少一个LED管芯和至少一个温度控制和电流调节(TCCR)器件。 TCCR器件电连接在LED管芯和电源之间,并被放置在LED管芯的有效温度感测距离内,以便感测LED管芯的温度变化。 TCCR器件的电阻与25℃至85℃范围内的温度成比例,即电阻随温度升高。 此外,TCCR器件在50℃和80℃之间的电阻差大于或等于100mΩ。

    Method for manufacturing over-current protection device
    8.
    发明授权
    Method for manufacturing over-current protection device 有权
    制造过流保护装置的方法

    公开(公告)号:US07892392B2

    公开(公告)日:2011-02-22

    申请号:US12041322

    申请日:2008-03-03

    摘要: A method for manufacturing an over-current protection device comprises a step of providing at least one current sensitive device and a step of pressing. The current sensitive device comprises a first electrode foil, a second electrode foil and a PTC conductive layer physically laminated between the first and second electrode foils. The pressing step is to press the current sensitive device at a predetermined temperature, thereby generating at least one overflow portion at sides of the PTC conductive layer to form the over-current protection device. The predetermined temperature is higher than the softening temperature of the PTC conductive layer. The over-current protection devices manufactured according to the present invention have superior resistance distribution.

    摘要翻译: 一种用于制造过电流保护装置的方法包括提供至少一个电流敏感装置和按压步骤的步骤。 电流敏感器件包括物理层压在第一和第二电极箔之间的第一电极箔,第二电极箔和PTC导电层。 按压步骤是将电流敏感器件按预定温度按压,从而在PTC导电层的侧面产生至少一个溢出部分以形成过电流保护器件。 预定温度高于PTC导电层的软化温度。 根据本发明制造的过电流保护装置具有优异的电阻分布。

    METHOD FOR MANUFACTURING OVER-CURRENT PROTECTION DEVICE
    9.
    发明申请
    METHOD FOR MANUFACTURING OVER-CURRENT PROTECTION DEVICE 有权
    制造过流保护装置的方法

    公开(公告)号:US20080289751A1

    公开(公告)日:2008-11-27

    申请号:US12041322

    申请日:2008-03-03

    IPC分类号: B32B38/04 B32B37/04

    摘要: A method for manufacturing an over-current protection device comprises a step of providing at least one current sensitive device and a step of pressing. The current sensitive device comprises a first electrode foil, a second electrode foil and a PTC conductive layer physically laminated between the first and second electrode foils. The pressing step is to press the current sensitive device at a predetermined temperature, thereby generating at least one overflow portion at sides of the PTC conductive layer to form the over-current protection device. The predetermined temperature is higher than the softening temperature of the PTC conductive layer. The over-current protection devices manufactured according to the present invention have superior resistance distribution.

    摘要翻译: 一种用于制造过电流保护装置的方法包括提供至少一个电流敏感装置和按压步骤的步骤。 电流敏感器件包括物理层压在第一和第二电极箔之间的第一电极箔,第二电极箔和PTC导电层。 按压步骤是将电流敏感器件按预定温度按压,从而在PTC导电层的侧面产生至少一个溢出部分以形成过电流保护器件。 预定温度高于PTC导电层的软化温度。 根据本发明制造的过电流保护装置具有优异的电阻分布。

    Light emitting diode apparatus
    10.
    发明申请
    Light emitting diode apparatus 有权
    发光二极管装置

    公开(公告)号:US20080111505A1

    公开(公告)日:2008-05-15

    申请号:US11656224

    申请日:2007-01-19

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0872

    摘要: A light emitting diode (LED) apparatus with temperature control and current regulation functions is provided. The LED apparatus includes at least one LED die and at least one temperature control and current regulation (TCCR) device. The TCCR device is electrically connected between the LED die and a power source, and is placed within an effective temperature sensing distance of the LED die, so as to sense temperature changes of the LED die. The resistance of the TCCR device is proportional to the temperature in a range of 25° C. to 85° C., i.e., the resistance increases with temperature. Moreover, the resistance difference of the TCCR device between 50° C. and 80° C. is greater than or equal to 100 mΩ.

    摘要翻译: 提供了具有温度控制和电流调节功能的发光二极管(LED)装置。 LED装置包括至少一个LED管芯和至少一个温度控制和电流调节(TCCR)器件。 TCCR器件电连接在LED管芯和电源之间,并被放置在LED管芯的有效温度感测距离内,以便感测LED管芯的温度变化。 TCCR器件的电阻与25℃至85℃范围内的温度成比例,即电阻随温度升高。 此外,TCCR器件在50°C和80°C之间的电阻差大于或等于100 mOmega。