公开(公告)号：US07816263B2

公开(公告)日：2010-10-19

申请号：US11989912

申请日：2006-07-18

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L21/44 ,  H01L51/40

CPC分类号： H01L51/105 ,  H01L27/283 ,  H01L51/0021 ,  H01L51/0022 ,  H01L51/0541 ,  H01L51/0545

摘要： Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.

摘要翻译： 公开了一种具有高分辨率和高图案精度以及高生产效率的薄膜晶体管的制造方法。 特别公开了一种用于制造薄膜晶体管的方法，其中防止了用于电极形成的电镀步骤中的半导体特性的劣化。 该方法的特征在于，通过在有机半导体层上形成保护膜的方法形成源电极或漏电极，然后通过供给含有电镀催化剂的液体在其上形成镀催化剂图案，然后 使电镀剂与图案接触。

公开(公告)号：US20090111210A1

公开(公告)日：2009-04-30

申请号：US11922466

申请日：2006-05-23

申请人： Reiko Obuchi ,  Katsura Hirai ,  Chiyoko Takemura

发明人： Reiko Obuchi ,  Katsura Hirai ,  Chiyoko Takemura

IPC分类号： H01L51/30

CPC分类号： H01L51/0096 ,  H01L51/0003 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

摘要： A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film. The method for organic semiconductor material thin film formation is characterized in that, when the surface free energy of the surface of the substrate is γS=γSd+γSp+γSh (wherein γSd, γSp, and γSh each represent a non-polar component, a polar component, and a hydrogen bond component of the surface free energy of the solid surface based on the Young-Fowkes equation), and a surface free energy of a solvent in the aforesaid liquid is represented by γL=γLd+γLp+γLh (wherein γLd, γLp, and γLh each represent a non-polar component, a polar component, and a hydrogen bond component of the surface free energy of liquid based on the Young-Fowkes equation), γSh−γLh value is in the range of −5 to 20 (mN/m) and hydrogen bond component γSh is 0

摘要翻译： 用于形成具有改善的基板上的迁移率的有机半导体材料膜的方法，以及通过利用该方法可以发展出高性能的有机薄膜晶体管的制造方法。 有机薄膜晶体管的制造方法利用有机半导体材料膜形成方法，包括将含有机半导体材料的液体涂覆在基板的表面上以形成半导体材料薄膜。 有机半导体材料薄膜形成方法的特征在于，当衬底表面的表面自由能为γS=γSd+γSp+γSh（其中γSd，γSp和γSh各自表示非极性组分时， 极性成分和基于Young-Fowkes方程的固体表面的表面自由能的氢键成分），并且上述液体中的溶剂的表面自由能由γL=γLd+γLp+γLh表示（其中 基于Young-Fowkes方程，γLd，γLp和γLh各自表示非极性成分，极性成分和液体表面自由能的氢键成分），γSh-gammaLh值在-5 至20（mN / m），氢键成分γSh为0 <γSh<20（mN / m）。

公开(公告)号：US07391049B2

公开(公告)日：2008-06-24

申请号：US11349383

申请日：2006-02-06

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L29/08 ,  H01L29/76

CPC分类号： H01L51/0545 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78609 ,  H01L51/0021 ,  H01L51/0022 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0097 ,  H01L51/0525 ,  H01L51/102 ,  H01L51/107

摘要： Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.

摘要翻译： 本发明公开了一种通过该方法制造薄膜晶体管薄片和薄片晶体管片的方法，该方法包括在基板上提供栅极总线，在栅极总线侧的基板表面上提供 绝缘层，能够接收流体电极材料，将流体电极材料供应到绝缘层，允许流体电极材料渗透绝缘层，从渗透流体电极材料形成栅电极以与栅极总线接触 在所述栅电极上形成栅极绝缘层，以及在所述栅极绝缘层上形成半导体层。

公开(公告)号：US20080048181A1

公开(公告)日：2008-02-28

申请号：US11628695

申请日：2005-06-06

申请人： Tatsuo Tanaka ,  Hiroshi Kita ,  Katsura Hirai ,  Chiyoko Takemura ,  Rie Katakura

发明人： Tatsuo Tanaka ,  Hiroshi Kita ,  Katsura Hirai ,  Chiyoko Takemura ,  Rie Katakura

IPC分类号： H01L51/30 ,  C08F28/06

CPC分类号： C07D333/18 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic semiconductor thin film, comprising an organic semiconductor compound, wherein the organic semiconductor thin film is manufactured by a process of forming a film by using a solution or a dispersion at room temperature prepared by mixing the organic semiconductor compound and an organic solvent, and the half width of a diffraction peak having the maximum intensity is 0.4° or less in an X-ray diffraction spectrum of the film.

摘要翻译： 一种有机半导体薄膜，包括有机半导体化合物，其中有机半导体薄膜是通过使用通过混合有机半导体化合物和有机溶剂而制备的在室温下的溶液或分散体形成薄膜的方法制造的，以及 在膜的X射线衍射光谱中，具有最大强度的衍射峰的半值宽度为0.4°以下。

公开(公告)号：US20070243658A1

公开(公告)日：2007-10-18

申请号：US11784717

申请日：2007-04-09

申请人： Katsura Hirai ,  Reiko Obuchi

发明人： Katsura Hirai ,  Reiko Obuchi

IPC分类号： H01L51/40

CPC分类号： H01L51/0004 ,  H01L51/0012 ,  H01L51/0094 ,  H01L51/0525 ,  H01L51/0545

摘要： A method of producing a crystalline organic semiconductor thin film including the steps of: (a) coating a solution of an organic semiconductor material in a solvent onto a substrate to form a liquid coating film; and (b) crystallizing the organic semiconductor material in the liquid coating film at an edge of the liquid coating film on the substrate so as to grow a crystalline of the organic semiconductor material.

摘要翻译： 一种制造结晶有机半导体薄膜的方法，包括以下步骤：（a）将有机半导体材料在溶剂中的溶液涂布在基板上以形成液体涂膜; 和（b）使基板上的液体涂膜的边缘处的液体涂膜中的有机半导体材料结晶，从而生长有机半导体材料的结晶。

公开(公告)号：US07081210B2

公开(公告)日：2006-07-25

申请号：US10511353

申请日：2003-04-16

申请人： Katsura Hirai ,  Mitsuhiro Fukuda

发明人： Katsura Hirai ,  Mitsuhiro Fukuda

IPC分类号： H01L29/12

CPC分类号： H01L51/0036 ,  B82Y10/00 ,  C08G61/12 ,  C08G61/125 ,  C08G61/126 ,  C08L65/00 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/009 ,  H01L51/0092 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0583 ,  H01L51/0595

摘要： Disclosed is an organic semiconductor composition containing particles and an organic semiconducting compound combining with the particles.

摘要翻译： 公开了含有颗粒和与颗粒结合的有机半导体化合物的有机半导体组合物。

公开(公告)号：US20060138423A1

公开(公告)日：2006-06-29

申请号：US11349383

申请日：2006-02-06

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L29/04

CPC分类号： H01L51/0545 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78609 ,  H01L51/0021 ,  H01L51/0022 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0097 ,  H01L51/0525 ,  H01L51/102 ,  H01L51/107

摘要： Disclosed are a process of manufacturing a thin-film transisitor sheet and a thin-sheet transistor sheet manufactured by the process, the process comprising providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supplying the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.

摘要翻译： 本发明公开了一种通过该方法制造薄膜晶体管薄片和薄片晶体管片的方法，该方法包括在基板上提供栅极总线，在栅极总线侧的基板表面上提供 绝缘层，能够接收流体电极材料，将流体电极材料供应到绝缘层，允许流体电极材料渗透绝缘层，从渗透流体电极材料形成栅电极以与栅极总线接触 在所述栅电极上形成栅极绝缘层，以及在所述栅极绝缘层上形成半导体层。

公开(公告)号：US07018872B2

公开(公告)日：2006-03-28

申请号：US10428479

申请日：2003-05-02

申请人： Katsura Hirai ,  Shigehiro Kitamura

发明人： Katsura Hirai ,  Shigehiro Kitamura

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/283 ,  H01L51/0013 ,  H01L51/0016 ,  H01L51/0018 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/005 ,  H01L51/0541 ,  H01L51/0545

摘要： A method for manufacturing an organic thin-film transistor, comprising a substrate, a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode, is disclosed, wherein the method comprises the steps of forming the gate electrode on the substrate, forming the gate insulation layer on the substrate, forming the semiconductor layer on the substrate, applying a metal particle dispersion containing metal particles on the substrate, gate insulation layer or organic semiconductor layer to form an electrode precursor layer comprised of the metal particles, and heat-fusing the metal particles in the electrode precursor layer to form the source electrode and the drain electrode.

公开(公告)号：US06740900B2

公开(公告)日：2004-05-25

申请号：US10371118

申请日：2003-02-21

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： H01L3524

CPC分类号： H01L51/0541 ,  H01L51/0018 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0545 ,  H01L51/105

摘要： There is described an organic thin-film transistor fabricated on a substrate. The organic thin-film transistor includes a first insulating layer formed on the substrate; an organic semiconductor layer formed on the first insulating layer; a second insulating layer formed on the organic semiconductor layer; a first through-hole bored through the second insulating layer; a second through-hole bored through the second insulating layer; a source electrode embedded in the first through-hole, a depth of which is equal to or greater than a thickness of the second insulating layer so that the source electrode contacts the organic semiconductor layer; a drain electrode embedded in the second through-hole, a depth of which is equal to or greater than a thickness of the second insulating layer so that the drain electrode contacts the organic semiconductor layer; and a gate electrode embedded in the first insulating layer.

摘要翻译： 描述了在衬底上制造的有机薄膜晶体管。 有机薄膜晶体管包括形成在基板上的第一绝缘层; 形成在所述第一绝缘层上的有机半导体层; 形成在所述有机半导体层上的第二绝缘层; 穿过所述第二绝缘层的第一通孔; 穿过所述第二绝缘层的第二通孔; 源极电极嵌入第一通孔中，其深度等于或大于第二绝缘层的厚度，使得源电极接触有机半导体层; 埋入第二通孔中的漏电极，其深度等于或大于第二绝缘层的厚度，使得漏电极接触有机半导体层; 以及嵌入在第一绝缘层中的栅电极。

公开(公告)号：US5437952A

公开(公告)日：1995-08-01

申请号：US22918

申请日：1993-02-26

申请人： Katsura Hirai ,  Yasuo Kojima ,  Kiyoshi Goto

发明人： Katsura Hirai ,  Yasuo Kojima ,  Kiyoshi Goto

IPC分类号： G03F7/095 ,  G03G5/05 ,  G03G5/153 ,  G03G13/28 ,  G03G5/09 ,  G03F7/023

CPC分类号： G03G5/0567 ,  G03F7/095 ,  G03G13/28 ,  G03G5/0517 ,  G03G5/153

摘要： A photosensitive lithographic printing plate comprises a conductive support and provided thereon, a photoconductive layer of a composition comprising a photoconductor and an esterified compound of o-naphtho-quinonediazide sulfonic acid with a phenol resin, the phenol resin being a polycondensation compound of a monovalent phenol with an aldehyde or a ketone, and the content of the o-naphthoquinonediazide sulfonic acid residue being 0.4.times.10.sup.-3 to 3.0.times.10.sup.-3 mole per gram of the photoconductive layer.

摘要翻译： 感光性平版印刷版包括导电性载体，其上设置有包含光电导体和邻萘醌醌二叠氮化物磺酸的酯化化合物与酚醛树脂的组合物的光电导层，所述酚树脂是一价苯酚的缩聚化合物 与醛或酮，并且邻萘醌二叠氮化物磺酸残基的含量为每克光电导层为0.4×10 -3至3.0×10 -3摩尔。