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公开(公告)号:US20110058583A1
公开(公告)日:2011-03-10
申请号:US12944947
申请日:2010-11-12
申请人: Yumi FUKUDA , Masaaki Tamanani , Katsuko Tamatani , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara
发明人: Yumi FUKUDA , Masaaki Tamanani , Katsuko Tamatani , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara
CPC分类号: C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/48091 , H01L2924/00014
摘要: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2 (2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0
摘要翻译: 一种发光材料,其特征在于,当波长为250-500nm的光被激发时,其表现出在490-580nm波长范围内的发射峰,并且具有由以下通式表示的组成( 2):( M1-xRx)a2AlSib2Oc2Nd2(2)(在通式(2)中,M是除Si和Al以外的至少一种金属元素,R是发光中心元素,x,a2,b2,c2和d2 满足以下关系:0
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公开(公告)号:US4264565A
公开(公告)日:1981-04-28
申请号:US121095
申请日:1980-02-13
申请人: Hiroshi Inoue , Katsutoshi Komeya , Akihiko Tsuge
发明人: Hiroshi Inoue , Katsutoshi Komeya , Akihiko Tsuge
IPC分类号: C01B21/068 , C04B35/584 , C01B21/06
CPC分类号: C04B35/584 , C01B21/0685 , C01P2004/61 , C01P2006/80
摘要: A method for producing powder of .alpha.-silicon nitride which comprises the steps of:adding 0.3 to 2 parts by weight of powder of carbon and 0.005 to 1 paret by weight of at least one silicon compound selected from the group consisting of Si.sub.3 N.sub.4, SiC and silicon oxide nitride series compounds to one part by weight (as converted to SiO.sub.2) to a liquid silane derivative which produces a precipitate and HCl by hydrolysis and further causes SiO.sub.2 to be grown by the baking of said precipitate, or the precipitate produced by hydrolysis of the liquid silane derivatives;hydrolyzing the resultant mixture, if necessary;washing the mixture to separate a solid component, if necessary; andbaking the solid component for reduction and nitrogenization at a temperature of 1300.degree. to 1500.degree. C. in an atmosphere mainly consisting of a nitrogen gas or a gas of a nitrogen compound.
摘要翻译: 一种生产α-氮化硅粉末的方法,包括以下步骤:将0.3至2重量份的碳粉和0.005至1重量份的至少一种选自Si 3 N 4,SiC的硅化合物和 氧化硅氮化物系列化合物与1重量份(转化为SiO 2)相对于通过水解产生沉淀物和HCl的液体硅烷衍生物,并且进一步通过焙烧所述沉淀生成SiO 2或通过水解生成的沉淀 液体硅烷衍生物; 如果需要,水解所得混合物; 如果需要,洗涤混合物以分离固体组分; 在1300〜1500℃的温度下,在氮气或氮化合物气体的气氛中焙烧固体成分。
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公开(公告)号:US3551101A
公开(公告)日:1970-12-29
申请号:US3551101D
申请日:1968-08-12
IPC分类号: C04B35/581 , C01B21/06
CPC分类号: C04B35/581
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公开(公告)号:US08475680B2
公开(公告)日:2013-07-02
申请号:US12207771
申请日:2008-09-10
申请人: Yumi Fukuda , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara , Katsuko Tamatani
发明人: Yumi Fukuda , Masaaki Tamatani , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara
CPC分类号: C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/48091 , H01L2924/00014
摘要: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2 (2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0
摘要翻译: 一种发光材料,其特征在于,当波长为250-500nm的光被激发时,其表现出在490-580nm波长范围内的发射峰,并且具有由以下通式表示的组成( 2):( M1-xRx)a2AlSib2Oc2Nd2(2)(在通式(2)中,M是除Si和Al以外的至少一种金属元素,R是发光中心元素,x,a2,b2,c2和d2 满足以下关系:0
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公开(公告)号:US20110058582A1
公开(公告)日:2011-03-10
申请号:US12944938
申请日:2010-11-12
申请人: Yumi FUKUDA , Masaaki Tamatani , Katsuko Tamatani , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara
发明人: Yumi FUKUDA , Masaaki Tamatani , Katsuko Tamatani , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara
CPC分类号: C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/48091 , H01L2924/00014
摘要: A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2 (2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships:0
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6.
公开(公告)号:US07612006B2
公开(公告)日:2009-11-03
申请号:US11664072
申请日:2005-09-27
IPC分类号: C04B35/584 , C04B35/78
CPC分类号: C04B35/593 , B82Y30/00 , C04B35/5935 , C04B35/638 , C04B2235/3206 , C04B2235/3217 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/3258 , C04B2235/3826 , C04B2235/3865 , C04B2235/3869 , C04B2235/3878 , C04B2235/3886 , C04B2235/3895 , C04B2235/526 , C04B2235/5264 , C04B2235/5288 , C04B2235/5445 , C04B2235/604 , C04B2235/658 , C04B2235/661 , C04B2235/766 , C04B2235/77 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/963 , C04B2235/9669 , F16C33/32
摘要: To provide a sintered silicon nitride with conductivity and densification, an oxide of titanium group elements, such as titanium oxide, hafnium oxide, zirconium oxide and the like, aluminum oxide and/or aluminum nitride is added as needed to silicon nitride-oxidant of rare-earth elements-aluminum oxide system or silicon nitride-oxide of rare-earth elements-magnesia system, and then specified quantity of carbon nonotube (CNT) is added to the above mixture. CNT generates silicon carbide after the reaction with contiguous or proximal silicon nitride and the like depending on the sintering duration at high temperature. Since silicon carbide is generated along with nanotubes, the silicon carbide functions as conductor with excellent heat resistance, corrosion resistance and the like.
摘要翻译: 为了提供具有导电性和致密化性的烧结氮化硅,根据需要,将氧化钛,氧化铪,氧化锆等钛族元素的氧化物,氧化铝和/或氮化铝添加到稀有氮化硅 - 碱土元素 - 氧化铝体系或稀土元素 - 氧化镁体系的氮氧化硅 - 氧化物,然后向上述混合物中加入规定量的碳非管(CNT)。 根据高温下的烧结持续时间,CNT与邻接或近似氮化硅等反应后产生碳化硅。 由于碳化硅与纳米管一起产生,所以碳化硅作为导体具有优异的耐热性,耐腐蚀性等。
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公开(公告)号:US4693857A
公开(公告)日:1987-09-15
申请号:US716212
申请日:1985-03-26
IPC分类号: C04B35/58 , C04B35/584 , C04B35/597 , C04B33/32
CPC分类号: C04B35/584 , C04B35/597
摘要: As the aluminum nitride component of a sintering aid for powdered silicon nitride, either a spinel type compound having oxygen dissolved in aluminum nitride to form a solid solution or a poly-type aluminum nitride is used. Since the compound is highly stable in water, it can be effectively used in the form of an aqueous slurry mixture. As the sintering aid, this compound is used as effectively as aluminum nitride.
摘要翻译: 作为用于粉末状氮化硅的烧结助剂的氮化铝组分,使用具有溶解在氮化铝中的氧以形成固溶体的尖晶石型化合物或多型氮化铝。 由于该化合物在水中高度稳定,因此可以以含水浆料混合物的形式有效地使用。 作为烧结助剂,该化合物与氮化铝一样有效地使用。
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8.
公开(公告)号:US4615863A
公开(公告)日:1986-10-07
申请号:US768137
申请日:1985-08-22
申请人: Hiroshi Inoue , Akihiko Tsuge , Katsutoshi Komeya
发明人: Hiroshi Inoue , Akihiko Tsuge , Katsutoshi Komeya
IPC分类号: C01B21/072 , C04B35/581 , B22F1/00
CPC分类号: C04B35/581 , C01B21/0726
摘要: A process for producing readily sinterable aluminum nitride powder, which comprises mixing(i) alumina powder and/or powder of a compound capable of forming alumina by heat treatment,(ii) carbon powder and/or powder of a compound capable of forming carbon by heat treatment, and(iii) powder of at least one compound selected from the group consisting of alkaline earth metal oxides, compounds capable of forming said alkaline earth metal oxides by heat treatment, rare earth element oxides and compounds capable of forming said rare earth element oxides by heat treatment,and calcining the resulting mixture in a nitrogen-containing non-oxidative atmosphere, provides an aluminum nitride powder which is readily sinterable without further mixing with a sintering aid.
摘要翻译: 一种制造容易烧结的氮化铝粉末的方法,其包括通过热处理将(i)能够形成氧化铝的化合物的氧化铝粉末和/或粉末混合(ii)通过以下方式混合(i)能够形成碳的化合物的碳粉末和/或粉末 热处理,和(iii)选自碱土金属氧化物,能够通过热处理形成所述碱土金属氧化物的化合物,稀土元素氧化物和能够形成所述稀土元素的化合物中的至少一种化合物的粉末 氧化物,并将所得混合物在含氮非氧化性气氛中煅烧,提供易于烧结的氮化铝粉末,而不用与烧结助剂进一步混合。
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公开(公告)号:US4514370A
公开(公告)日:1985-04-30
申请号:US618524
申请日:1984-06-08
申请人: Hiroshi Inoue , Katsutoshi Komeya , Akihiko Tsuge , Kazunari Koide , Masaaki Mori , Tetsuro Urakawa
发明人: Hiroshi Inoue , Katsutoshi Komeya , Akihiko Tsuge , Kazunari Koide , Masaaki Mori , Tetsuro Urakawa
IPC分类号: C01B21/068
CPC分类号: C01B21/0685 , C01P2004/50 , C01P2004/61 , C01P2004/62
摘要: Disclosed is a process for preparing silicon nitride powder, which comprises baking a powdery mixture comprising (i) 1 part by weight of silica powder, or a silica-containing substance in terms of silica, (ii) 0.4 to 4 parts by weight of carbon powder, or a substance generating carbon by baking, in terms of carbon and (iii) 0.005 to 1 part by weight of silicon nitride powder synthesized by a silica reduction method, at a temperature of from 1350.degree. to 1550.degree. C. in a non-oxidative atmosphere containing nitrogen.
摘要翻译: 公开了一种制备氮化硅粉末的方法,其包括将包含(i)1重量份二氧化硅粉末或含二氧化硅的二氧化硅物质的粉末混合物烘烤,(ii)0.4至4重量份的碳 粉末或通过焙烧产生碳的物质,以碳和(iii)0.005〜1重量份的通过二氧化硅还原法合成的氮化硅粉末,在1350〜1550℃的温度下, 含氮的氧化气氛。
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公开(公告)号:US4368180A
公开(公告)日:1983-01-11
申请号:US293305
申请日:1981-08-17
申请人: Hiroshi Inoue , Katsutoshi Komeya , Akihiko Tsuge
发明人: Hiroshi Inoue , Katsutoshi Komeya , Akihiko Tsuge
IPC分类号: C01B21/068 , C04B35/584
CPC分类号: C04B35/584 , C01B21/0685 , C01P2004/61 , C01P2006/80
摘要: A method for producing powder of a .alpha.-silicon nitride which comprises the steps of adding 0.1 to 2 parts by weight of carbon and 0.005 to 1 part by weight of at least one silicon compound selected from the group consisting of Si.sub.3 N.sub.4, SiC and Si.sub.2 ON.sub.2 to one part by weight, when converted to SiO.sub.2, of a liquid alkylchlorosilane that forms a precipitate and HCl by hydrolysis which precipitate is convertible to SiO.sub.2 at a baking temperature of 1300.degree. to 1550.degree. C., hydrolyzing the resultant mixture, washing the mixture to separate a solid component, and baking the solid component at a temperature of 1300.degree. to 1550.degree. C. in an atmosphere mainly consisting of a nitrogen gas or a gas of a nitrogen compound to effect formation of .alpha.-silicon nitride.
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