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    Method for manufacturing semiconductor device
    1.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08980762B2

    公开(公告)日：2015-03-17

    申请号：US13728390

    申请日：2012-12-27

    申请人： Kazunori Iida ,  Yuji Kobayashi

    发明人： Kazunori Iida ,  Yuji Kobayashi

    IPC分类号： H01L21/44 ,  H01L21/302 ,  H01L21/461 ,  H01L21/308 ,  H01L21/033 ,  H01L21/3213 ,  H01L27/115

    CPC分类号： H01L21/3083 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11573

    摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming a film having different filling properties dependent on space width above the patterning film to cover the first line patterns and the second line patterns to form the film on the first line patterns and on the first inter-line pattern space while making a cavity in the first inter-line pattern space and to form the film on at least a bottom portion of the second inter-line pattern space and a side wall of each of the second line patterns. The method includes performing etch-back of the film to remove the film on the first line patterns and on the first inter-line pattern space while causing the film to remain on at least the side wall of the second line patterns.

    摘要翻译： 根据一个实施例，一种制造半导体器件的方法包括：形成具有不同填充特性的薄膜，该薄膜具有取决于图案化薄膜上方的空间宽度以覆盖第一线图案和第二线图案以在第一线图案上形成薄膜 第一线间图案空间，同时在第一线间图案空间中形成空腔，并且在第二线间图案空间的至少底部和每个第二线图案的侧壁上形成薄膜。 该方法包括执行膜的回蚀以去除第一线图形上和第一线间图案空间上的膜，同时使膜保持在至少第二线图案的侧壁上。

    Metal Surface Treatment Agent for Promoting Rubber-Metal Adhesion
    2.
    发明申请
    Metal Surface Treatment Agent for Promoting Rubber-Metal Adhesion 审中-公开
    金属表面处理剂促进橡胶金属粘附

    公开(公告)号：US20080023669A1

    公开(公告)日：2008-01-31

    申请号：US11629948

    申请日：2005-06-15

    申请人： Toru Imori ,  Jun Suzuki ,  Kazunori Iida

    发明人： Toru Imori ,  Jun Suzuki ,  Kazunori Iida

    IPC分类号： C09K3/00 ,  C08K3/08

    CPC分类号： D07B1/0666 ,  C08K5/16 ,  C09D4/00 ,  C09D7/63 ,  C09D183/08 ,  C23C2222/20 ,  C08G77/26

    摘要： A surface treatment agent for metal is provided which is capable of improving the strength of adhesion between metal and rubber. A metal surface treatment agent for promoting adhesion between the metal and rubber comprising a cobalt or other metal compound and a silane coupling agent having a metal-capturing functional group in the molecule, and a metal surface treatment agent for promoting adhesion between the metal and rubber comprising a silane coupling agent having in the molecule a metal-capturing functional group with a captured metal such as a cobalt. The metal-capturing functional group is preferably an amino, amide or azole group.

    摘要翻译： 提供了一种能够提高金属与橡胶之间的粘合强度的金属表面处理剂。 一种金属表面处理剂，用于促进包含钴或其它金属化合物的金属和橡胶之间的粘合性和在分子中具有金属捕获官能团的硅烷偶联剂，以及金属表面处理剂，用于促进金属和橡胶之间的粘合 包括在分子中具有捕获金属如钴的金属捕获官能团的硅烷偶联剂。 金属捕获官能团优选为氨基，酰胺或唑基。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20140065833A1

    公开(公告)日：2014-03-06

    申请号：US13728390

    申请日：2012-12-27

    申请人： Kazunori IIDA ,  Yuji Kobayashi

    发明人： Kazunori IIDA ,  Yuji Kobayashi

    IPC分类号： H01L21/308

    CPC分类号： H01L21/3083 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11573

    摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming a film having different filling properties dependent on space width above the patterning film to cover the first line patterns and the second line patterns to form the film on the first line patterns and on the first inter-line pattern space while making a cavity in the first inter-line pattern space and to form the film on at least a bottom portion of the second inter-line pattern space and a side wall of each of the second line patterns. The method includes performing etch-back of the film to remove the film on the first line patterns and on the first inter-line pattern space while causing the film to remain on at least the side wall of the second line patterns.

    摘要翻译： 根据一个实施例，一种制造半导体器件的方法包括：形成具有不同填充特性的薄膜，该薄膜具有取决于图案化薄膜上方的空间宽度以覆盖第一线图案和第二线图案以在第一线图案上形成薄膜 第一线间图案空间，同时在第一线间图案空间中形成空腔，并且在第二线间图案空间的至少底部和每个第二线图案的侧壁上形成薄膜。 该方法包括执行膜的回蚀以去除第一线图形上和第一线间图案空间上的膜，同时使膜保持在至少第二线图案的侧壁上。

    Acceptance determining method of blank for EUV mask and manufacturing method of EUV mask
    4.
    发明授权
    Acceptance determining method of blank for EUV mask and manufacturing method of EUV mask 有权
    EUV掩模的掩模验证方法和EUV掩模的制造方法

    公开(公告)号：US08423926B2

    公开(公告)日：2013-04-16

    申请号：US13237790

    申请日：2011-09-20

    申请人： Takeshi Koshiba ,  Hidefumi Mukai ,  Seiro Miyoshi ,  Kazunori Iida

    发明人： Takeshi Koshiba ,  Hidefumi Mukai ,  Seiro Miyoshi ,  Kazunori Iida

    IPC分类号： G06F17/50

    CPC分类号： G03F1/22 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/70

    摘要： According to one embodiment, an acceptance determining method of a blank for an EUV mask includes evaluating whether or not an integrated circuit device becomes defective, on the basis of information of a defect contained in a blank for an EUV mask and design information of a mask pattern to be formed on the blank. The integrated circuit device is to be manufactured by using the EUV mask. The EUV mask is manufactured by forming the mask pattern on the blank. And the blank is determined to be non-defective in a case that the integrated circuit device is not to be defective.

    摘要翻译： 根据一个实施例，用于EUV掩模的空白的接受确定方法包括基于包含在EUV掩码的空白中的缺陷的信息和掩模的设计信息来评估集成电路器件是否变得有缺陷 图案要在空白上形成。 集成电路器件将通过使用EUV掩模来制造。 通过在空白上形成掩模图案来制造EUV掩模。 在集成电路装置不具有缺陷的情况下，判断为无缺陷。

    Adhesion accelerator for bonding rubber to metal and rubber composition
    6.
    发明授权
    Adhesion accelerator for bonding rubber to metal and rubber composition 有权
    用于将橡胶粘合到金属和橡胶组合物上的粘合促进剂

    公开(公告)号：US06809138B2

    公开(公告)日：2004-10-26

    申请号：US10166117

    申请日：2002-06-10

    申请人： Toru Imori ,  Kazunori Iida

    发明人： Toru Imori ,  Kazunori Iida

    IPC分类号： C08K509

    CPC分类号： C08K5/098 ,  C08K5/56 ,  C08L21/00

    摘要： An adhesion accelerator for bonding rubber to metal contains a metal organic compound containing nickel and another metal organic compound containing zinc. Further, there is provided a rubber composition containing the above adhesion accelerator in an amount of 0.1 to 10 parts by weight and sulfur in an amount of 3 to 8 parts by weight, with respect to 100 parts by weight of the rubber component

    ACCEPTANCE DETERMINING METHOD OF BLANK FOR EUV MASK AND MANUFACTURING METHOD OF EUV MASK
    7.
    发明申请
    ACCEPTANCE DETERMINING METHOD OF BLANK FOR EUV MASK AND MANUFACTURING METHOD OF EUV MASK 有权
    EUV掩模防护罩和EUV掩模制造方法的接受度测定方法

    公开(公告)号：US20120174045A1

    公开(公告)日：2012-07-05

    申请号：US13237790

    申请日：2011-09-20

    申请人： Takeshi KOSHIBA ,  Hidefumi Mukai ,  Seiro Miyoshi ,  Kazunori IIda

    发明人： Takeshi KOSHIBA ,  Hidefumi Mukai ,  Seiro Miyoshi ,  Kazunori IIda

    IPC分类号： G06F17/50

    CPC分类号： G03F1/22 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/70

    摘要： According to one embodiment, an acceptance determining method of a blank for an EUV mask includes evaluating whether or not an integrated circuit device becomes defective, on the basis of information of a defect contained in a blank for an EUV mask and design information of a mask pattern to be formed on the blank. The integrated circuit device is to be manufactured by using the EUV mask. The EUV mask is manufactured by forming the mask pattern on the blank. And the blank is determined to be non-defective in a case that the integrated circuit device is not to be defective.

    摘要翻译： 根据一个实施例，用于EUV掩模的空白的接受确定方法包括基于包含在EUV掩码的空白中的缺陷的信息和掩模的设计信息来评估集成电路器件是否变得有缺陷 图案要在空白上形成。 集成电路器件将通过使用EUV掩模来制造。 通过在空白上形成掩模图案来制造EUV掩模。 在集成电路装置不具有缺陷的情况下，判断为无缺陷。