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    Piezoelectric thin film element, and piezoelectric thin film device
    2.
    发明授权
    Piezoelectric thin film element, and piezoelectric thin film device 有权
    压电薄膜元件和压电薄膜器件

    公开(公告)号：US08860286B2

    公开(公告)日：2014-10-14

    申请号：US13577405

    申请日：2011-02-15

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

    IPC分类号： H01L41/187 ,  H01L41/08 ,  H01L41/316

    CPC分类号： H01L41/0805 ,  H01L41/1873 ,  H01L41/316

    摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.

    摘要翻译： 公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。 压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体， 气体元素的比例为80ppm以下。

    2-(cyclic amino)-pyrimidone derivatives
    3.
    发明授权
    2-(cyclic amino)-pyrimidone derivatives 失效
    2-（环状氨基） - 嘧啶酮衍生物

    公开(公告)号：US08569294B2

    公开(公告)日：2013-10-29

    申请号：US12282396

    申请日：2007-03-14

    申请人： Kenji Fukunaga ,  Toshiyuki Kohara ,  Kazutoshi Watanabe ,  Yoshihiro Usui ,  Fumiaki Uehara ,  Satoshi Yokoshima ,  Daiki Sakai ,  Shin-ichi Kusaka ,  Kazuki Nakayama

    发明人： Kenji Fukunaga ,  Toshiyuki Kohara ,  Kazutoshi Watanabe ,  Yoshihiro Usui ,  Fumiaki Uehara ,  Satoshi Yokoshima ,  Daiki Sakai ,  Shin-ichi Kusaka ,  Kazuki Nakayama

    IPC分类号： A61K31/535

    CPC分类号： C07D413/14 ,  C07D401/04 ,  C07D401/14 ,  C07D403/14 ,  C07D409/14 ,  C07D453/06 ,  C07D493/04

    摘要： A compound represented by the formula (I), an optically active isomer thereof, or a pharmaceutical acceptable salt thereof: wherein R2 represents a hydrogen or the like; R3 represents methyl group or the like; R20 represents a halogen atom or the like; q represents an integer of 0 to 3; Z represent nitrogen atom, CH, or the like; R4 represents hydrogen or the like; R5 represents hydrogen or the like; R6 represents a substituted alkyloxy and the like; p represents an integer of 0 to 3; X represents bond, CH2, oxygen atom, NH, or the like; any one or more of R5 and R6, R5 and R4, R6 and R4, X and R5, X and R4, X and R6, and R6 and R6 may combine to each other to form a ring, which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).

    摘要翻译： 由式（I）表示的化合物或其光学活性异构体或其药学上可接受的盐：其中R2表示氢等; R3表示甲基等; R 20表示卤素原子等; q表示0〜3的整数， Z表示氮原子，CH等; R4表示氢等; R5表示氢等; R6表示取代的烷氧基等; p表示0〜3的整数， X表示键，CH2，氧原子，NH等; R 5和R 6，R 5和R 4，R 6和R 4，X和R 5，X和R 4，X和R 6以及R 6和R 6中的任何一个或多个可以彼此结合形成环，其用于预防和/ 或治疗由tau蛋白激酶1多动症如神经变性疾病（例如阿尔茨海默病）引起的疾病。

    Nitride semiconductor substrate and method of fabricating the same
    7.
    发明授权
    Nitride semiconductor substrate and method of fabricating the same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US08120059B2

    公开(公告)日：2012-02-21

    申请号：US12585109

    申请日：2009-09-03

    申请人： Kazutoshi Watanabe ,  Takehiro Yoshida

    发明人： Kazutoshi Watanabe ,  Takehiro Yoshida

    IPC分类号： H01L29/02 ,  H01L21/311

    CPC分类号： B24B9/065

    摘要： A nitride semiconductor substrate includes a front surface, a rear surface on an opposite side to the front surface, and a first edge portion including a chamfered edge on the front surface. A ratio of an average surface roughness of the front surface to an average surface roughness of the first edge portion is not more than 0.01.

    摘要翻译： 氮化物半导体衬底包括前表面，与前表面相反侧的后表面，以及在前表面上包括倒角边缘的第一边缘部分。 前表面的平均表面粗糙度与第一边缘部分的平均表面粗糙度之比不大于0.01。

    INTERMEDIATE COMPOUND FOR SYNTHESIZING PHARMACEUTICAL AGENT AND PRODUCTION METHOD THEREOF
    8.
    发明申请
    INTERMEDIATE COMPOUND FOR SYNTHESIZING PHARMACEUTICAL AGENT AND PRODUCTION METHOD THEREOF 审中-公开
    用于合成药物代理的中间体化合物及其生产方法

    公开(公告)号：US20110251385A1

    公开(公告)日：2011-10-13

    申请号：US13169782

    申请日：2011-06-27

    申请人： Masahiro OKUYAMA ,  Fumiaki UEHARA ,  Hiroshi IWAMURA ,  Kazutoshi WATANABE

    发明人： Masahiro OKUYAMA ,  Fumiaki UEHARA ,  Hiroshi IWAMURA ,  Kazutoshi WATANABE

    IPC分类号： C07D413/14

    CPC分类号： C07D265/30 ,  C07D265/32

    摘要： The present invention relates to a production method of an optically active morpholine compound represented by the formula 10, which includes the following steps: wherein each symbol is as defined in the specification.The present invention also relates to a production method of an compound represented by the formula 55, which includes the following steps: wherein each symbol is as defined in the specification.According to the production method of the present invention, an optically active 2-aryl-substituted morpholine compound and 3-oxo-3-(pyrimidin-4-yl)propionate, which are important as starting materials for synthesizing 2-(2-arylmorpholin-4-yl)-1-methyl-1H-[4,4′]bipyrimidinyl-6-one having a tau protein kinase 1 inhibitory activity and useful as a therapeutic drug for Alzheimer's disease and the like, can be produced in a high yield by an industrially advantageous method.

    摘要翻译： 本发明涉及由式10表示的光学活性吗啉化合物的制备方法，其包括以下步骤：其中各符号如说明书中所定义。 本发明还涉及由式55表示的化合物的制备方法，其包括以下步骤：其中每个符号如说明书中所定义。 根据本发明的制备方法，光学活性2-芳基取代的吗啉化合物和3-氧代-3-（嘧啶-4-基）丙酸酯作为合成2-（2-芳基吗啉） -4-基）-1-甲基-1H- [4,4']二嘧啶基-6-酮，其具有tau蛋白激酶1抑制活性，可用作阿尔茨海默氏病等的治疗药物，可以以高 通过工业上有利的方法得到。

    Intermediate compound for synthesizing pharmaceutical agent and production method thereof
    9.
    发明授权
    Intermediate compound for synthesizing pharmaceutical agent and production method thereof 失效
    用于合成药剂的中间体化合物及其制备方法

    公开(公告)号：US07994315B2

    公开(公告)日：2011-08-09

    申请号：US11996205

    申请日：2006-07-21

    申请人： Masahiro Okuyama ,  Fumiaki Uehara ,  Hiroshi Iwamura ,  Kazutoshi Watanabe

    发明人： Masahiro Okuyama ,  Fumiaki Uehara ,  Hiroshi Iwamura ,  Kazutoshi Watanabe

    IPC分类号： C07D265/30

    CPC分类号： C07D265/30 ,  C07D265/32

    摘要： Production method of an optically active morpholine compound represented by the formula 10, or a compound represented by the formula 55, which includes the following steps: or wherein each symbol is as defined in the specification. An optically active 2-aryl-substituted morpholine compound and 3-oxo-3-(pyrimidin-4-yl)propionate, which are important as starting materials for synthesizing 2-(2-arylmorpholin-4-yl)-1-methyl-1H-[4,4′]bipyrimidinyl-6-one having a tau protein kinase 1 inhibitory activity and useful as a therapeutic drug for Alzheimer's disease and the like, can be produced in a high yield by an industrially advantageous method.

    摘要翻译： 由式10表示的光学活性吗啉化合物的制备方法或由式55表示的化合物，其包括以下步骤：或其中每个符号如说明书中所定义。 光学活性的2-芳基取代的吗啉化合物和3-氧代-3-（嘧啶-4-基）丙酸酯，其作为合成2-（2-芳基吗啉-4-基）-1-甲基 - 可以通过工业上有利的方法以高产率制备具有tau蛋白激酶1抑制活性并且可用作阿尔茨海默氏病等的治疗药物的1H- [4,4']联嘧啶基-6-酮。

    Semiconductor film formation device
    10.
    发明授权
    Semiconductor film formation device 有权
    半导体成膜装置

    公开(公告)号：US07740703B2

    公开(公告)日：2010-06-22

    申请号：US10803087

    申请日：2004-03-18

    申请人： Mitsuru Hasegawa ,  Akihiro Miyauchi ,  Kazutoshi Watanabe ,  Meguro Takeshi

    发明人： Mitsuru Hasegawa ,  Akihiro Miyauchi ,  Kazutoshi Watanabe ,  Meguro Takeshi

    IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/48 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C23C16/46 ,  C30B25/10 ,  C30B25/16

    摘要： A semiconductor film formation device has: a reaction vessel that includes a gas flow path to allow source gas to pass through and a substrate mount site provided in the gas flow path to mount a substrate; a temperature control means that is disposed opposite to the substrate mount site and close to the reaction vessel to control the internal temperature of the reaction vessel; and a thermal conductivity adjusting member that is disposed between the reaction vessel and the temperature control means. The thermal conductivity adjusting member has a section with a thermal conductivity different from the other section along the gas flow path.

    摘要翻译： 半导体膜形成装置具有：包括允许源气体通过的气体流路和设置在气体流路中的基板安装位置以安装基板的反应容器; 温度控制装置，其与基板安装位置相对设置并且靠近反应容器以控制反应容器的内部温度; 以及设置在反应容器和温度控制装置之间的导热性调节构件。 导热性调节构件具有沿着气体流动路径具有不同于另一部分的热导率的截面。