摘要:
The surge absorber having a surge absorbing element, and first and second wire means for electrically connecting the surge absorbing element across the input lines of an electronic device. The first and second wire means are connected to the surge absorber by conductive heat releasable means, for example, a low melting point solder. The second wire means includes a spring loaded member such that, on release of the first or second wire means by the first or second heat releasable means, respectively, by melting of the solder due to heat generated by the surge absorbing element, the surge absorbing element moves away from the first or second wire means. The surge absorber prevents an abnormal heating of the surge absorbing element when continuous overvoltages or overcurrents pass therethrough.
摘要:
A MELF (Metal Electrode Face Bonding Device) surge absorbing element which can be connected across a pair of input lines of an electronic device. The surge absorbing element is secured in electrical contact with the input lines by a conductive heat releasable adhering means, e.g., a solder. A spring is positioned in biased relationship against the surge absorbing element. When the surge absorbing element is subjected to overvoltages or overcurrents continuously across the input lines, the surge absorbing element heats up, which, in turn, heats the adhering means. When the temperature reaches a predetermined value, the adhering means releases its securement of the surge absorbing element, e.g., the solder melts, and no longer holds the element. When this occurs, the bias of the spring means positioned against the now unsecured surge absorbing element serves to move the element away from and out of electrical contact with the adhering means and, in turn, the input lines. This prevents further heating of the surge absorbing element.
摘要:
A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
摘要:
A transparent electrically conductive oxide film is composed of a compound oxide containing indium oxide, tin oxide, and zinc oxide and includes a connecting section, in which the tin content is higher than the zinc content at least in connecting section, and at least the connection section has crystallinity. Alternatively, in the transparent electrically conductive oxide film, the atomic percentage of zinc to the total of zinc, indium, and tin is in the range of about 1 at % through about 9 at %, the atomic ratio of tin to zinc is about 1 or more, the atomic percentage of tin to the total of zinc, indium, and tin is about 20 at % or less, and at least a portion thereof has crystallinity. An electronic apparatus provided with such a transparent electrically conductive oxide film as at least a portion of the electric circuit thereof, a target for forming a transparent electrically conductive oxide film, and a method for fabricating a substrate provided with a transparent electrically conductive oxide film are also disclosed.
摘要:
Stretchable shoes capable of being fixed without causing any stretch of the shoes once adjustment of a size thereof depending on a wearer is completed. Velcro-type hook and loop fasteners are arranged on a heel, so that a size of the shoes may be kept fixed once adjustment of the size is carried out, because engagement between the fasteners exhibits rigidity to a degree sufficient to substantially prevent release of the engagement. Also, the stretchable shoes permit adjustment of a size of the shoes to be readily accomplished by merely loosening a single countersunk screw kept tightened.
摘要:
A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.