公开(公告)号：US20130180332A1

公开(公告)日：2013-07-18

申请号：US13351937

申请日：2012-01-17

申请人： Kemiao Jia ,  Yizhen Lin

发明人： Kemiao Jia ,  Yizhen Lin

IPC分类号： G01C19/56

CPC分类号： G01C19/5762

摘要： A micro-electromechanical systems (MEMS) transducer (400) is adapted to use lateral axis vibration of the drive mass (210) to generate non-planar oscillations of a coupling mass (220) in response to Coriolis forces created from in-plane rotational acceleration, which in turn generate non-planar motions of a symmetric teeter-totter sense mass (230) which are detected as a capacitive difference signal by capacitive electrodes (403, 404) formed on the substrate (402) below the sense mass (230).

摘要翻译： 微机电系统（MEMS）换能器（400）适于使用驱动质量块（210）的横轴振动，以响应于由平面内旋转产生的科里奥利力产生耦合块（220）的非平面振荡 加速度，其又产生对称跷跷板感测质量（230）的非平面运动，其通过形成在感测质量（230）下方的衬底（402）上的电容电极（403,404）检测为电容差分信号 ）。

公开(公告)号：US09233836B2

公开(公告)日：2016-01-12

申请号：US14561726

申请日：2014-12-05

申请人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

发明人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

IPC分类号： H01L29/82 ,  B81B7/00 ,  H01L29/66 ,  H01L29/84 ,  G01P15/08 ,  G01P15/18 ,  B81B3/00

CPC分类号： B81B7/0077 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2203/0163 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/086 ,  H01L29/66007 ,  H01L29/84

摘要： A semiconductor device is formed such that a semiconductor substrate of the device has a non-uniform thickness. A cavity is etched at a selected side of the semiconductor substrate, and the selected side is then fusion bonded to another substrate, such as a carrier substrate. After fusion bonding, the side of the semiconductor substrate opposite the selected side is ground to a defined thickness. Accordingly, the semiconductor substrate has a uniform thickness except in the area of the cavity, where the substrate is thinner. Devices that benefit from a thinner substrate, such as an accelerometer, can be formed over the cavity.

摘要翻译： 半导体器件形成为使得器件的半导体衬底具有不均匀的厚度。 在半导体衬底的选定侧蚀刻空腔，然后将所选择的侧面熔合到另一衬底，例如载体衬底。 在熔接后，将半导体衬底与选定侧相对的侧面被研磨成规定的厚度。 因此，半导体衬底除了空腔的区域之外具有均匀的厚度，其中衬底较薄。 可以在空腔上形成从更薄的衬底（例如加速度计）受益的器件。

公开(公告)号：US20140311243A1

公开(公告)日：2014-10-23

申请号：US13867720

申请日：2013-04-22

申请人： Aaron A. Geisberger ,  Kemiao Jia

发明人： Aaron A. Geisberger ,  Kemiao Jia

IPC分类号： G01P15/08

CPC分类号： G01P15/0888 ,  B81C99/004 ,  B81C2201/0132 ,  G01B5/24 ,  G01C19/5656 ,  G01C19/5663 ,  G01C25/005

摘要： An apparatus (36) includes a motion amplification structure (52), an actuator (54), and a sense electrode (50) in proximity to the structure (52). The actuator (54) induces an axial force (88) upon the structure (52), which causes a relatively large amount of in-plane motion (108) in one or more beams (58, 60) of the structure (52). When sidewalls (98) of the beams (58, 60) exhibit a skew angle (28), the in-plane motion (108) of the beams (58, 60) produces out-of-plane motion (110) of a paddle element (62) connected to the end of the beams (58, 60). The skew angle (28), which results from an etch process, defines a degree to which the sidewalls (98) of beams (58, 60) are offset or tilted from their design orientation. The out-of-plane motion (110) of element (62) is sensed at the electrode (50), and is utilized to determine an estimated skew angle (126).

摘要翻译： 装置（36）包括靠近结构（52）的运动放大结构（52），致动器（54）和感测电极（50）。 致动器（54）在结构（52）上引起轴向力（88），其在结构（52）的一个或多个梁（58,60）中引起相对大量的平面内运动（108）。 当梁（58,60）的侧壁（98）呈现偏斜角（28）时，梁（58,60）的平面内运动（108）产生桨叶的平面外运动（110） 元件（62）连接到梁（58,60）的端部。 由蚀刻工艺产生的偏斜角（28）限定了梁（58,60）的侧壁（98）从其设计取向偏移或倾斜的程度。 在电极（50）处感测元件（62）的平面外运动（110），并用于确定估计的倾斜角（126）。

公开(公告)号：US08743449B2

公开(公告)日：2014-06-03

申请号：US13148019

申请日：2010-06-01

申请人： Huikai Xie ,  Kemiao Jia

发明人： Huikai Xie ,  Kemiao Jia

IPC分类号： G02B26/00 ,  G02B26/08 ,  B29D11/00

CPC分类号： G02B26/0841 ,  B81B3/0062 ,  B81B2201/042 ,  G02B26/0866

摘要： Embodiments of the subject invention relate to micromirror devices and methods of fabricating a micromirror/micromirror array. According to an embodiment, micromirrors can be fabricated from a semiconductor substrate where after forming actuators and bonding pads on a front side of the semiconductor substrate, the device is flipped over to have a portion of the back side of the substrate removed and formed to become the mirror plate surface. The subject micromirrors can allow further miniaturization of endoscopes and other optical applications without sacrificing the optical aperture through their surface mounting capabilities.

摘要翻译： 本发明的实施例涉及微镜器件和制造微镜/微镜阵列的方法。 根据实施例，微镜可以由半导体衬底制造，其中在半导体衬底的前侧形成致动器和接合焊盘之后，将器件翻转以使衬底背面的一部分移除并形成为 镜面表面。 本体微镜可以允许内窥镜和其他光学应用的进一步小型化，而不会通过其表面安装能力牺牲光学孔径。

公开(公告)号：US08921203B2

公开(公告)日：2014-12-30

申请号：US13750419

申请日：2013-01-25

申请人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

发明人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

IPC分类号： H01L21/30

CPC分类号： B81B7/0077 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2203/0163 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/086 ,  H01L29/66007 ,  H01L29/84

摘要： A method for forming a semiconductor device includes providing a substrate having a first major surface and a second major surface, removing a first portion of the substrate to form a cavity at the first major surface of the substrate, bonding the first major surface of the substrate to a carrier substrate after forming the cavity, and reducing a thickness of the substrate. The method further includes forming a first accelerometer device at the second major surface such that at least a portion of the first accelerometer device is over the cavity and forming a second accelerometer device at the second major surface such that the second accelerometer device is not disposed over the cavity.

摘要翻译： 一种形成半导体器件的方法包括提供具有第一主表面和第二主表面的衬底，去除衬底的第一部分以在衬底的第一主表面处形成空腔，将衬底的第一主表面 在形成空腔之后到载体基板，并且减小基板的厚度。 该方法还包括在第二主表面处形成第一加速度计装置，使得第一加速度计装置的至少一部分在空腔之上并且在第二主表面处形成第二加速度计装置，使得第二加速度计装置不被布置在 空腔。

公开(公告)号：US20100033788A1

公开(公告)日：2010-02-11

申请号：US12534514

申请日：2009-08-03

申请人： Huikai Xie ,  Sarah Maley ,  Paul McManamon ,  Thomas Nelson ,  Lei Wu ,  Andrea Pais ,  Kemiao Jia

发明人： Huikai Xie ,  Sarah Maley ,  Paul McManamon ,  Thomas Nelson ,  Lei Wu ,  Andrea Pais ,  Kemiao Jia

IPC分类号： G02B26/10 ,  G02B26/08 ,  H01L21/50

CPC分类号： G06Q10/06 ,  G06Q10/06313 ,  G06Q30/0601 ,  G06Q40/12

摘要： A high-fill-factor and large-aperture tip-tilt micromirror array is disclosed. Electrothermal actuation can be used to obtain a large scan range, and the actuation engine can be hidden underneath the mirror plate for high fill factor. In one embodiment, inverted-series-connected (ISC) bimorph actuators can be used to achieve tilt and piston scanning. Embodiments can be used to implement optical phased array technology for steering active and passive electro-optical systems based on MEMS mirrors.

摘要翻译： 公开了高填充因子和大孔径尖端倾斜微镜阵列。 可以使用电热驱动来获得大的扫描范围，并且致动引擎可以隐藏在镜板的下面用于高填充因子。 在一个实施例中，可以使用反向串联连接（ISC）双压电晶片致动器来实现倾斜和活塞扫描。 可以使用实施例来实现用于转向基于MEMS镜的主动和无源电光系统的光相控阵技术。

公开(公告)号：US09213045B2

公开(公告)日：2015-12-15

申请号：US13901189

申请日：2013-05-23

申请人： Kemiao Jia ,  Peter T. Jones

发明人： Kemiao Jia ,  Peter T. Jones

IPC分类号： G01P15/125 ,  B81C1/00 ,  B81B3/00

CPC分类号： G01P15/125 ,  B81B3/0016 ,  B81B2201/0235 ,  B81C1/00968

摘要： A mechanism for recovering from stiction-related events in a MEMS device through application of a force orthogonal to the stiction force is provided. A small force applied orthogonal to the vector of a stiction force can release the stuck proof mass easier than a force parallel to the vector of the stiction force. Example embodiments provide a vertical parallel plate or comb-fingered lateral actuator to apply the orthogonal force. Alternate embodiments provide a proof mass of a second transducer to impact a stuck MEMS actuator to release stiction.

摘要翻译： 提供了一种用于通过施加与静力相垂直的力从MEMS装置中的静态相关事件恢复的机构。 垂直于静力的向量施加的小的力可以比平行于静力的矢量的力更容易地释放卡住的证明物质。 示例性实施例提供垂直平行板或梳齿指侧向致动器以施加正交力。 替代实施例提供第二换能器的检测质量，以冲击卡住的MEMS致动器以释放静摩擦。

公开(公告)号：US20150084138A1

公开(公告)日：2015-03-26

申请号：US14561726

申请日：2014-12-05

申请人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

发明人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

IPC分类号： B81B7/00 ,  B81B3/00

CPC分类号： B81B7/0077 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2203/0163 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/086 ,  H01L29/66007 ,  H01L29/84

摘要： A semiconductor device is formed such that a semiconductor substrate of the device has a non-uniform thickness. A cavity is etched at a selected side of the semiconductor substrate, and the selected side is then fusion bonded to another substrate, such as a carrier substrate. After fusion bonding, the side of the semiconductor substrate opposite the selected side is ground to a defined thickness. Accordingly, the semiconductor substrate has a uniform thickness except in the area of the cavity, where the substrate is thinner. Devices that benefit from a thinner substrate, such as an accelerometer, can be formed over the cavity.

摘要翻译： 半导体器件形成为使得器件的半导体衬底具有不均匀的厚度。 在半导体衬底的选定侧蚀刻空腔，然后将所选择的侧面熔合到另一衬底，例如载体衬底。 在熔接后，将半导体衬底与选定侧相对的侧面被研磨成规定的厚度。 因此，半导体衬底除了空腔的区域之外具有均匀的厚度，其中衬底较薄。 可以在空腔上形成从更薄的衬底（例如加速度计）受益的器件。

公开(公告)号：US20140345380A1

公开(公告)日：2014-11-27

申请号：US13901189

申请日：2013-05-23

申请人： Kemiao Jia ,  Peter T. Jones

发明人： Kemiao Jia ,  Peter T. Jones

IPC分类号： G01P15/125 ,  B81B3/00

CPC分类号： G01P15/125 ,  B81B3/0016 ,  B81B2201/0235 ,  B81C1/00968

摘要： A mechanism for recovering from stiction-related events in a MEMS device through application of a force orthogonal to the stiction force is provided. A small force applied orthogonal to the vector of a stiction force can release the stuck proof mass easier than a force parallel to the vector of the stiction force. Example embodiments provide a vertical parallel plate or comb-fingered lateral actuator to apply the orthogonal force. Alternate embodiments provide a proof mass of a second transducer to impact a stuck MEMS actuator to release stiction.

摘要翻译： 提供了一种用于通过施加与静力相垂直的力从MEMS装置中的静态相关事件恢复的机构。 垂直于静力的向量施加的小的力可以比平行于静力的矢量的力更容易地释放卡住的证明物质。 示例性实施例提供垂直平行板或梳齿指侧向致动器以施加正交力。 替代实施例提供第二换能器的检测质量，以冲击卡住的MEMS致动器以释放静摩擦。

公开(公告)号：US20130285161A1

公开(公告)日：2013-10-31

申请号：US13750419

申请日：2013-01-25

申请人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

发明人： Lisa H. Karlin ,  Hemant D. Desai ,  Kemiao Jia

IPC分类号： H01L29/66 ,  H01L29/84

CPC分类号： B81B7/0077 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2203/0163 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/086 ,  H01L29/66007 ,  H01L29/84

摘要： A semiconductor device is formed such that a semiconductor substrate of the device has a non-uniform thickness. A cavity is etched at a selected side of the semiconductor substrate, and the selected side is then fusion bonded to another substrate, such as a carrier substrate. After fusion bonding, the side of the semiconductor substrate opposite the selected side is ground to a defined thickness. Accordingly, the semiconductor substrate has a uniform thickness except in the area of the cavity, where the substrate is thinner. Devices that benefit from a thinner substrate, such as an accelerometer, can be formed over the cavity.