Positive resist composition and method of forming resist pattern
    1.
    发明授权
    Positive resist composition and method of forming resist pattern 有权
    正型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US08586281B2

    公开(公告)日:2013-11-19

    申请号:US13156159

    申请日:2011-06-08

    IPC分类号: G03F7/028 G03F7/039 G03F7/26

    摘要: A positive resist composition including: a base component; and a sensitizer which a polymeric compound having a core portion that includes a hydrocarbon group or a heterocycle of two or more valences and at least one arm portion bonded to the core portion and represented by formula (1), and a polymeric compound having a core portion including a polymer having a molecular weight of 500 to 20,000 and at least one arm portion bonded to the core portion and represented by formula (1); and either the base component includes a resin component that generates acid upon exposure and exhibits increased solubility in an alkali developing solution under action of acid, or the positive resist composition further contains an acid generator component including a compound that generates acid upon exposure: —(X)—Y  (1) in which X represents a divalent linking group having an acid dissociable group; and Y represents a polymer chain.

    摘要翻译: 一种正型抗蚀剂组合物,包括:基础组分; 和具有核心部分的高分子化合物,其具有包含烃基或两价以上化合价的杂环,以及至少一个与核心部分结合并由式(1)表示的臂部分的聚合化合物和具有核心的聚合物 包括分子量为500至20,000的聚合物和至少一个结合到核心部分并由式(1)表示的臂部分; 并且基础组分包括在暴露时产生酸的树脂组分,并且在酸的作用下在碱性显影液中显示增加的溶解性,或者正型抗蚀剂组合物还含有包含在暴露时产生酸的化合物的酸产生剂组分: - ( X)-Y(1)其中X表示具有酸解离基团的二价连接基团; Y表示聚合物链。

    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND
    2.
    发明申请
    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND 有权
    耐蚀组合物,形成耐蚀图案和聚合物的方法

    公开(公告)号:US20120208128A1

    公开(公告)日:2012-08-16

    申请号:US13371151

    申请日:2012-02-10

    摘要: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid.

    摘要翻译: 一种抗蚀剂组合物,其包含在暴露后产生酸的基体组分(A),并且在酸的作用下在显影液中显示出改变的溶解性,所述基础组分(A)包含含有结构单元(a0-1)的树脂组分(A1) 具有由下述通式(a0-1)表示的基团和由可以具有与被取代基取代的具有氢原子键合的含有氢原子并含有酸的丙烯酸酯的结构单元(a1) 通过酸的作用显示出极性增加的可分解基团。

    COMPOUND, RADICAL POLYMERIZATION INITIATOR, METHOD FOR PRODUCING COMPOUND, POLYMER, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN
    6.
    发明申请
    COMPOUND, RADICAL POLYMERIZATION INITIATOR, METHOD FOR PRODUCING COMPOUND, POLYMER, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN 有权
    化合物,自由基聚合引发剂,生产化合物的方法,聚合物,电阻组合物和形成电阻图案的方法

    公开(公告)号:US20140141373A1

    公开(公告)日:2014-05-22

    申请号:US14126535

    申请日:2012-06-15

    IPC分类号: G03F7/004 G03F7/038

    摘要: A compound represented by formula (I). In the formula, R1 represents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that R1 and Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from —O—C(═O)—, —NH—C(═O)— and —NH—C(═NH)— on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; R2 represents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and A+ represents a metal cation or an organic cation.

    摘要翻译: 由式(I)表示的化合物。 在该式中,R 1表示1〜10个碳原子的烃基; Z表示1〜10个碳原子的烃基或氰基; 条件是R1和Z可以相互键合形成环; X表示在与Q接触的端子上具有选自-O-C(= O) - , - NH-C(= O) - 和-NH-C(= NH))中任一个的二价连接基团; p表示1〜3的整数, Q表示具有(p + 1)价的烃基,条件是当p为1时,Q可以是单键; R2表示单键,可以具有取代基的亚烷基或可具有取代基的亚芳基; q表示0或1; r表示0〜8的整数, A +表示金属阳离子或有机阳离子。

    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    9.
    发明申请
    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 审中-公开
    耐蚀组合物和形成耐力图案的方法

    公开(公告)号:US20130071789A1

    公开(公告)日:2013-03-21

    申请号:US13617697

    申请日:2012-09-14

    IPC分类号: G03F7/004 G03F7/20

    摘要: A resist composition for use with EUV or EB including: a resin component (C) containing at least one type of atom selected from the group consisting of a fluorine atom and a silicon atom, an aromatic group, and a polarity conversion group that decomposes by action of base to increase the polarity; and a resin component (A) that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid (excluding the aforementioned resin component (C)), wherein an amount of a structural unit having the aforementioned aromatic group in the aforementioned resin component (C) is at least 20 mol %.

    摘要翻译: 一种与EUV或EB一起使用的抗蚀剂组合物,包括:含有选自氟原子和硅原子,芳族基团和极性转换基团中的至少一种原子的树脂组分(C),其分解为 碱的作用增加极性; 和在曝光时产生酸的树脂组分(A),并且在酸的作用下(在上述树脂组分(C)之外)在显影液中溶解度改变),其中在上述 树脂成分(C)为20摩尔%以上。

    RESIST COMPOSITION FOR EUV, METHOD FOR PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN
    10.
    发明申请
    RESIST COMPOSITION FOR EUV, METHOD FOR PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN 审中-公开
    EUV抗性组合物,用于生产EUV抗性组合物的方法和形成耐药性图案的方法

    公开(公告)号:US20120208124A1

    公开(公告)日:2012-08-16

    申请号:US13366718

    申请日:2012-02-06

    IPC分类号: G03F7/20 G03F7/004

    摘要: The present invention is related to a resist composition for EUV exhibiting E0KrF greater than E0EUV, wherein E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light, and a method of producing a resist composition for EUV including preparing the resist composition so that E0KrF is greater than E0EUV, and a method of forming a resist pattern, including: applying the resist composition for EUV to a substrate to form a resist film on the substrate; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern.According to the present invention, a resist composition for EUV exhibiting excellent lithography properties and pattern shape in EUV lithography, a method of producing the resist composition for EUV, and a method of forming a resist pattern that uses the resist composition for EUV can be provided.

    摘要翻译: 本发明涉及一种表现出大于E0EUV的E0KrF的EUV抗蚀剂组合物,其中E0KrF是对248nm的KrF光的敏感性,E0EUV是对EUV光的敏感性,以及制备用于EUV的抗蚀剂组合物的方法,包括制备 所述抗蚀剂组合物使得E0KrF大于E0EUV,以及形成抗蚀剂图案的方法,包括:将EUV用抗蚀剂组合物施加到基板上以在所述基板上形成抗蚀剂膜; 进行抗蚀剂膜的EUV曝光; 并且使抗蚀剂膜显影以形成抗蚀剂图案。 根据本发明,可以提供在EUV光刻中显示出优异的光刻性能和图案形状的EUV抗蚀剂组合物,制备用于EUV的抗蚀剂组合物的方法和形成使用该抗蚀剂组合物的抗蚀剂图案的方法,用于EUV 。