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公开(公告)号:US08459293B2
公开(公告)日:2013-06-11
申请号:US12766565
申请日:2010-04-23
申请人: Kevin S. Griffin
发明人: Kevin S. Griffin
CPC分类号: C23C16/448 , C23C16/54 , Y10T137/3112 , Y10T137/7069 , Y10T137/877
摘要: Semiconductor manufacturing tools with chemical delivery systems, such as precursor distribution system, use reservoir assemblies as part of a distribution system. One reservoir assembly includes: a canister comprising at least one sidewall, a top, and a bottom encompassing an interior volume therein; an inlet port and an outlet port in fluid communication with the interior volume; an inlet valve for controlling fluid communication between the inlet port and the interior volume; and an outlet valve for controlling fluid communication between the outlet port and the interior volume, wherein at least one of the inlet valve or the outlet valve comprises a dual-function hybrid valve.
摘要翻译: 具有化学输送系统(例如前体分配系统)的半导体制造工具使用储存器组件作为分配系统的一部分。 一个储存器组件包括:包括至少一个侧壁,顶部和包围内部容积的底部的罐; 入口端口和与所述内部容积流体连通的出口; 入口阀,用于控制所述入口和所述内部容积之间的流体连通; 以及用于控制出口和内部容积之间的流体连通的出口阀,其中入口阀或出口阀中的至少一个包括双功能混合阀。
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公开(公告)号:US20100269937A1
公开(公告)日:2010-10-28
申请号:US12766565
申请日:2010-04-23
申请人: Kevin S. Griffin
发明人: Kevin S. Griffin
CPC分类号: C23C16/448 , C23C16/54 , Y10T137/3112 , Y10T137/7069 , Y10T137/877
摘要: Semiconductor manufacturing tools with chemical delivery systems, such as precursor distribution system, use reservoir assemblies as part of a distribution system. One reservoir assembly includes: a canister comprising at least one sidewall, a top, and a bottom encompassing an interior volume therein; an inlet port and an outlet port in fluid communication with the interior volume; an inlet valve for controlling fluid communication between the inlet port and the interior volume; and an outlet valve for controlling fluid communication between the outlet port and the interior volume, wherein at least one of the inlet valve or the outlet valve comprises a dual-function hybrid valve.
摘要翻译: 具有化学输送系统(例如前体分配系统)的半导体制造工具使用储存器组件作为分配系统的一部分。 一个储存器组件包括:包括至少一个侧壁,顶部和包围内部容积的底部的罐; 入口端口和与所述内部容积流体连通的出口; 入口阀,用于控制所述入口和所述内部容积之间的流体连通; 以及用于控制出口和内部容积之间的流体连通的出口阀,其中入口阀或出口阀中的至少一个包括双功能混合阀。
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公开(公告)号:US20130087093A1
公开(公告)日:2013-04-11
申请号:US13456547
申请日:2012-04-26
申请人: Donald J.K. Olgado , Yuriy Melnik , Hiroji Hanawa , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
发明人: Donald J.K. Olgado , Yuriy Melnik , Hiroji Hanawa , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
CPC分类号: C30B25/02 , C23C16/303 , C23C16/4488 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C30B25/10 , C30B25/14 , C30B29/406
摘要: Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region.
摘要翻译: 本发明的实施方案一般涉及使用高温气体分配装置和等离子体产生形成活化的前体气体的氢化物气相外延(HVPE)装置,其用于在衬底的表面上快速形成高质量的复合氮化物层 。 在一个实施例中,在注入HVPE装置的处理区域之前,在气体分配装置内由含氮前体形成等离子体。 在另一个实施方案中,通过使用气体分配装置作为在处理区域中形成等离子体的电极,在处理区域内由含氮前体形成等离子体。 在每个实施例中,第二前体气体可以在进入处理区域之前通过气体分配装置分别引入到HVPE设备的处理区域中,而不与含氮前体混合。
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公开(公告)号:US20130032085A1
公开(公告)日:2013-02-07
申请号:US13456693
申请日:2012-04-26
申请人: Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
发明人: Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
CPC分类号: C23C16/303 , C23C16/4488 , C23C16/452 , C30B25/105 , C30B25/14 , C30B29/403
摘要: Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.
摘要翻译: 本文公开的本发明的实施例通常涉及氢化物气相外延(HVPE)沉积室,其利用等离子体产生装置形成活化的前体气体,其用于在衬底的表面上快速形成高质量的复合氮化物层。 在一个实施例中,等离子体产生装置用于产生可以增强沉积反应动力学,从而减少处理时间并改善形成的III族金属氮化物层的膜质量的期望的III族金属卤化物前体气体。 此外,腔室可以配备有单独的含氮前体活化物质发生器,以增强所输送的氮前体气体的活性。
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5.
公开(公告)号:US4815072A
公开(公告)日:1989-03-21
申请号:US845663
申请日:1986-03-28
申请人: Martin J. Linda , Kevin S. Griffin
发明人: Martin J. Linda , Kevin S. Griffin
CPC分类号: H04Q11/04
摘要: The invention provides switching arrangments for use in digital telecommunications exchange systems for local subscriber access and comprises a selector means (PUBS) which is arranged to interface between a plurality of time division multiplex highway groups (G0 to G3) and a plurality of channel digital traffic paths (C0 to C5). The selector means (PUBS) is microprocessor controlled (MCI) to effect a plurality of different switching connectivity modes enabling bothway communication between various combinations of the time division multiplex highway groups and the channel traffic paths when the input and output data rates (1 Mbit/sec, 64 Mbit/sec or 32 Mbit/sec) of the particular connectivity mode is either compatible or incompatible.
摘要翻译: 本发明提供了用于本地用户接入的数字电信交换系统中的切换布置,并且包括一个选择器装置(PUBS),其被布置为在多个时分多路复用公路组(G0至G3)和多个信道数字业务 路径(C0至C5)。 选择器装置(PUBS)是微处理器控制(MCI),以实现多个不同的切换连接模式,当输入和输出数据速率(1Mbit / s)时,能够实现时分多路复用公路组的各种组合和信道业务路径之间的通信, 秒,64 Mbit / s或32 Mbit / s)兼容或不兼容。
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