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    APPARATUS AND METHOD FOR HVPE PROCESSING USING A PLASMA
    1.
    发明申请
    APPARATUS AND METHOD FOR HVPE PROCESSING USING A PLASMA 审中-公开
    使用等离子体进行HVPE加工的装置和方法

    公开(公告)号：US20130087093A1

    公开(公告)日：2013-04-11

    申请号：US13456547

    申请日：2012-04-26

    申请人： Donald J.K. Olgado ,  Yuriy Melnik ,  Hiroji Hanawa ,  Karl M. Brown ,  Son T. Nguyen ,  Kevin S. Griffin

    发明人： Donald J.K. Olgado ,  Yuriy Melnik ,  Hiroji Hanawa ,  Karl M. Brown ,  Son T. Nguyen ,  Kevin S. Griffin

    IPC分类号： C30B25/10 ,  C30B25/02

    CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/406

    摘要： Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region.

    摘要翻译： 本发明的实施方案一般涉及使用高温气体分配装置和等离子体产生形成活化的前体气体的氢化物气相外延（HVPE）装置，其用于在衬底的表面上快速形成高质量的复合氮化物层 。 在一个实施例中，在注入HVPE装置的处理区域之前，在气体分配装置内由含氮前体形成等离子体。 在另一个实施方案中，通过使用气体分配装置作为在处理区域中形成等离子体的电极，在处理区域内由含氮前体形成等离子体。 在每个实施例中，第二前体气体可以在进入处理区域之前通过气体分配装置分别引入到HVPE设备的处理区域中，而不与含氮前体混合。

    PLASMA ASSISTED HVPE CHAMBER DESIGN
    2.
    发明申请
    PLASMA ASSISTED HVPE CHAMBER DESIGN 审中-公开
    等离子体辅助HVPE室设计

    公开(公告)号：US20130032085A1

    公开(公告)日：2013-02-07

    申请号：US13456693

    申请日：2012-04-26

    申请人： Hiroji HANAWA ,  Yuriy Melnik ,  Donald J.K. Olgado ,  Karl M. Brown ,  Son T. Nguyen ,  Kevin S. Griffin

    发明人： Hiroji HANAWA ,  Yuriy Melnik ,  Donald J.K. Olgado ,  Karl M. Brown ,  Son T. Nguyen ,  Kevin S. Griffin

    IPC分类号： C30B25/14 ,  C30B25/02

    CPC分类号： C23C16/303 ,  C23C16/4488 ,  C23C16/452 ,  C30B25/105 ,  C30B25/14 ,  C30B29/403

    摘要： Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.

    摘要翻译： 本文公开的本发明的实施例通常涉及氢化物气相外延（HVPE）沉积室，其利用等离子体产生装置形成活化的前体气体，其用于在衬底的表面上快速形成高质量的复合氮化物层。 在一个实施例中，等离子体产生装置用于产生可以增强沉积反应动力学，从而减少处理时间并改善形成的III族金属氮化物层的膜质量的期望的III族金属卤化物前体气体。 此外，腔室可以配备有单独的含氮前体活化物质发生器，以增强所输送的氮前体气体的活性。

    Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
    5.
    发明授权
    Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron 有权
    具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管

    公开(公告)号：US08562798B2

    公开(公告)日：2013-10-22

    申请号：US11222231

    申请日：2005-09-07

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01B11/02 ,  H01B11/06 ,  H02G3/04 ,  H05K1/09

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

    摘要翻译： 物理气相沉积反应器包括金属溅射靶，耦合到金属溅射靶的直流溅射功率源和面向金属溅射靶的晶片支撑基座。 可移动磁体阵列与金属溅射靶的与晶片支撑基座相对的一侧相邻。 固体金属RF馈送杆接合金属溅射靶并且在与晶片支撑基座相对的一侧上从靶的表面延伸。 VHF阻抗匹配电路耦合到与金属溅射靶相对的RF馈电杆的端部以及耦合到所述VHF阻抗匹配电路的VHF RF发电发生器。 优选地，反应器还包括中心轴，可动磁体阵列围绕该中心轴可旋转，中心轴具有轴向延伸的中空通道，RF馈送杆延伸穿过通道。

    Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
    6.
    发明申请
    Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
    在晶片表面具有各向同性离子速度分布的物理气相沉积方法

    公开(公告)号：US20090229969A1

    公开(公告)日：2009-09-17

    申请号：US12077067

    申请日：2008-03-14

    申请人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

    发明人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

    IPC分类号： C23C14/34

    CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

    摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

    摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

    Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target
    9.
    发明授权
    Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target 有权
    用于等离子体增强物理气相沉积的方法，其具有施加到目标的RF源功率

    公开(公告)号：US08062484B2

    公开(公告)日：2011-11-22

    申请号：US11222230

    申请日：2005-09-07

    申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.

    摘要翻译： 在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入 载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。 该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。 该方法优选地包括维持目标磁场并扫描目标上的目标磁场。