摘要:
A semiconductor device having reduced pitting may be formed from isolation layer patterns on a semiconductor substrate defining an active region, a tunnel oxide layer on the active region, the tunnel oxide layer having a nitrified surface, a floating gate on the tunnel oxide layer, a dielectric layer on the floating gate, and a control gate on the dielectric layer.
摘要:
A battery pack is capable of preventing problems from occurring due to the damage of a secondary battery when external shock is applied. The battery pack includes battery cells serially coupled, coupled in parallel, or coupled in a combination of series and parallel, a shock detecting unit for detecting external shock, and a controller coupled to the battery cell and the shock detecting unit to output sensed shock information to the outside.
摘要:
Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.
摘要:
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.
摘要:
A circuit module of a battery pack includes a pattern resistor having conductivity; a temperature sensor that is adjacent to the pattern resistor and that senses a temperature of the pattern resistor; and a current detecting unit that is electrically connected to both ends of the pattern resistor, that is electrically connected to the temperature sensor, and that detects a current flowing in the pattern resistor based on a voltage across the ends of the pattern resistor and a temperature of the pattern resistor.
摘要:
A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.
摘要:
A circuit module of a battery pack includes a pattern resistor having conductivity; a temperature sensor that is adjacent to the pattern resistor and that senses a temperature of the pattern resistor; and a current detecting unit that is electrically connected to both ends of the pattern resistor, that is electrically connected to the temperature sensor, and that detects a current flowing in the pattern resistor based on a voltage across the ends of the pattern resistor and a temperature of the pattern resistor.
摘要:
In a method of forming a dielectric layer structure, a precursor thin film chemisorbed on a substrate in a process chamber is formed using a source gas including a metal precursor. The process chamber is purged and pumped out to remove a remaining source gas therein and to remove any metal precursor physisorbed on the precursor thin film. The forming of the precursor thin film and the purging and pumping out of the process chamber are alternately and repeatedly performed to form a multi-layer precursor thin film. An oxidant is provided onto the multilayer precursor thin film to form a bulk oxide layer.