摘要:
Improved stripper solutions for removing photoresists from substrates are provided that typically have freezing points below about +15° C. and high loading capacities. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulation can additionally contain a secondary solvent. Methods for use of the stripping solutions are additionally provided.
摘要:
Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, a secondary solvent, and less than about 3 wt. % water. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.
摘要:
Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided. Advantageous solution methods are provided for the use of the novel stripper solutions to prepare an electronic interconnect structure by removing a plurality of resist layers to expose an underlying dielectric and related substrate without imparting damage to any of the underlying structure.
摘要:
Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, a secondary solvent, and less than about 3 wt. % water. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.
摘要:
Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.
摘要:
The present invention discloses microfluidic modules for making nanocrystalline materials in a continuous flow process. The microfluidic modules include one or more flow path with mixing structures and one or more controlled heat exchangers to process the nanocrystalline materials and reagents in the flow path. The microfluidic modules can be interconnected to form microfluidic reactors that incorporate one or more process functions such as nucleation, growth, and purification.