公开(公告)号：US08563988B2

公开(公告)日：2013-10-22

申请号：US13878742

申请日：2011-10-27

申请人： Masao Uchida ,  Koutarou Tanaka

发明人： Masao Uchida ,  Koutarou Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/26506 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

摘要： As viewed along a normal to the principal surface of a substrate 101, this semiconductor element 100 has a unit cell region 100ul and a terminal region 100f located between the unit cell region and an edge of the semiconductor element. The terminal region 100f includes a ring region 103f of a second conductivity type which is arranged in a first silicon carbide semiconductor layer 102 so as to contact with a drift region 102d. The ring region includes a high concentration ring region 103af which contacts with the surface of the first silicon carbide semiconductor layer and a low concentration ring region 103bf which contains an impurity of the second conductivity type at a lower concentration than in the high concentration ring region and of which the bottom contacts with the first silicon carbide semiconductor layer. A side surface of the high concentration ring region 103af contacts with the drift region 102d. As viewed along a normal to the principal surface of the semiconductor substrate, the high concentration ring region and the low concentration ring region are identical in contour.

摘要翻译： 沿着基板101的主表面的法线观察，该半导体元件100具有位于单位电池区域和半导体元件的边缘之间的单位电池区域100ul和端子区域100f。 端子区域100f包括布置在第一碳化硅半导体层102中以与漂移区域102d接触的第二导电类型的环形区域103f。 环区域包括与第一碳化硅半导体层的表面接触的高浓度环区域103af以及含有比在高浓度环区域低的浓度的第二导电型杂质的低浓度环区域103bf，以及 其底部与第一碳化硅半导体层接触。 高浓度环区域103af的侧表面与漂移区域102d接触。 沿着与半导体衬底的主表面正交的方向观察，高浓度环区域和低浓度环区域的轮廓相同。

公开(公告)号：US08525239B2

公开(公告)日：2013-09-03

申请号：US13390613

申请日：2011-05-24

申请人： Koutarou Tanaka ,  Takashi Hori ,  Kazuhiro Adachi

发明人： Koutarou Tanaka ,  Takashi Hori ,  Kazuhiro Adachi

IPC分类号： H01L29/772

CPC分类号： H01L29/7838 ,  H01L29/1033 ,  H01L29/1608 ,  H01L29/7828

摘要： The present invention is directed to an MIS type semiconductor device, including a channel layer between a semiconductor body region and a gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region. Since Vfb of the semiconductor device is equivalent to or less than a gate rated voltage Vgcc− of the semiconductor device with respect to an OFF-polarity, density of carrier charge that is induced near the surface of the semiconductor body region is kept at a predetermined amount or less with a guaranteed range of operation of the semiconductor device.

摘要翻译： 本发明涉及一种MIS半导体器件，其包括在半导体主体区域和栅极绝缘膜之间的沟道层，沟道层具有与半导体本体区域相反的半导体极性。 由于半导体器件的Vfb相对于OFF极性等于或小于半导体器件的栅极额定电压Vgcc-，所以在半导体本体区域的表面附近感应的载流子电荷的密度保持在预定的 数量或更少，具有半导体器件的有保证的操作范围。

公开(公告)号：US20130214291A1

公开(公告)日：2013-08-22

申请号：US13878742

申请日：2011-10-27

申请人： Masao Uchida ,  Koutarou Tanaka

发明人： Masao Uchida ,  Koutarou Tanaka

IPC分类号： H01L21/265 ,  H01L29/16

CPC分类号： H01L21/26506 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

摘要： As viewed along a normal to the principal surface of a substrate 101, this semiconductor element 100 has a unit cell region 100ul and a terminal region 100f located between the unit cell region and an edge of the semiconductor element. The terminal region 100f includes a ring region 103f of a second conductivity type which is arranged in a first silicon carbide semiconductor layer 102 so as to contact with a drift region 102d. The ring region includes a high concentration ring region 103af which contacts with the surface of the first silicon carbide semiconductor layer and a low concentration ring region 103bf which contains an impurity of the second conductivity type at a lower concentration than in the high concentration ring region and of which the bottom contacts with the first silicon carbide semiconductor layer. A side surface of the high concentration ring region 103af contacts with the drift region 102d. As viewed along a normal to the principal surface of the semiconductor substrate, the high concentration ring region and the low concentration ring region are identical in contour.

摘要翻译： 沿着基板101的主表面的法线观察，该半导体元件100具有位于单位电池区域和半导体元件的边缘之间的单位电池区域100ul和端子区域100f。 端子区域100f包括布置在第一碳化硅半导体层102中以与漂移区域102d接触的第二导电类型的环形区域103f。 环区域包括与第一碳化硅半导体层的表面接触的高浓度环区域103af以及含有比在高浓度环区域低的浓度的第二导电型杂质的低浓度环区域103bf，以及 其底部与第一碳化硅半导体层接触。 高浓度环区域103af的侧表面与漂移区域102d接触。 沿着与半导体衬底的主表面正交的方向观察，高浓度环区域和低浓度环区域的轮廓相同。

公开(公告)号：US5949106A

公开(公告)日：1999-09-07

申请号：US887905

申请日：1997-07-08

申请人： Seiji Kai ,  Yoshihiro Yamamoto ,  Masaaki Itoh ,  Koutarou Tanaka

发明人： Seiji Kai ,  Yoshihiro Yamamoto ,  Masaaki Itoh ,  Koutarou Tanaka

IPC分类号： H01L23/48 ,  H01L21/338 ,  H01L23/50 ,  H01L29/417 ,  H01L29/423 ,  H01L29/812 ,  H01L29/78

CPC分类号： H01L23/50 ,  H01L29/41725 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/42312 ,  H01L2924/0002

摘要： A power FET for which it is difficult to generate oscillations dependent on the interval between adjacent pads. The power FET has a plurality of pads for first terminals, which are disposed on one side of a chip at unequal intervals, and a plurality of pads for second terminals, which are placed on the other side of the chip. Alternatively, or in addition, the plurality of pads for the second terminals may also be disposed at unequal intervals.

摘要翻译： 功率FET，其难以产生取决于相邻焊盘之间的间隔的振荡。 功率FET具有用于第一端子的多个焊盘，其以不等间隔设置在芯片的一侧，以及放置在芯片的另一侧上的多个用于第二端子的焊盘。 或者或另外，用于第二端子的多个焊盘也可以以不等间隔设置。

公开(公告)号：US07330630B2

公开(公告)日：2008-02-12

申请号：US11373913

申请日：2006-03-14

申请人： Koutarou Tanaka ,  Nobuaki Kitano ,  Yukio Abe ,  Haruyasu Komano

发明人： Koutarou Tanaka ,  Nobuaki Kitano ,  Yukio Abe ,  Haruyasu Komano

IPC分类号： G02B6/26

CPC分类号： G02F1/225 ,  G02F1/0147 ,  G02F1/2257 ,  G02F2203/21

摘要： A waveguide type variable optical attenuator is provided with a substrate for forming a waveguide for optical signal propagation; a waveguide element comprising 2 arm waveguides arranged on the surface of the substrate for constituting a portion of the waveguide and cladding for covering the arm waveguides and the surface of the substrate; and a heater arranged on the surface of the waveguide element for heating the arm waveguides. The 2 arm waveguides are connected thermally.

摘要翻译： 波导型可变光衰减器设置有用于形成用于光信号传播的波导的基板; 波导元件，其包括布置在所述基板的表面上的2个臂波导，用于构成所述波导的一部分和用于覆盖所述臂波导和所述基板的表面的包层; 以及布置在波导元件的表面上用于加热臂波导的加热器。 2臂波导热连接。

公开(公告)号：US20120176183A1

公开(公告)日：2012-07-12

申请号：US13390613

申请日：2011-05-24

申请人： Koutarou Tanaka ,  Takashi Hori ,  Kazuhiro Adachi

发明人： Koutarou Tanaka ,  Takashi Hori ,  Kazuhiro Adachi

IPC分类号： H03K3/01 ,  H01L29/772

CPC分类号： H01L29/7838 ,  H01L29/1033 ,  H01L29/1608 ,  H01L29/7828

摘要： The present invention is directed to an MIS type semiconductor device, including a channel layer between a semiconductor body region and a gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region. Since Vfb of the semiconductor device is equivalent to or less than a gate rated voltage Vgcc− of the semiconductor device with respect to an OFF-polarity, density of carrier charge that is induced near the surface of the semiconductor body region is kept at a predetermined amount or less with a guaranteed range of operation of the semiconductor device.

摘要翻译： 本发明涉及一种MIS半导体器件，其包括在半导体主体区域和栅极绝缘膜之间的沟道层，沟道层具有与半导体本体区域相反的半导体极性。 由于半导体器件的Vfb相对于OFF极性等于或小于半导体器件的栅极额定电压Vgcc-，所以在半导体本体区域的表面附近感应的载流子电荷的密度保持在预定的 数量或更少，具有半导体器件的有保证的操作范围。

公开(公告)号：US20110207275A1

公开(公告)日：2011-08-25

申请号：US13126112

申请日：2010-07-28

申请人： Koutarou Tanaka ,  Masahiko Niwayama ,  Masao Uchida

发明人： Koutarou Tanaka ,  Masahiko Niwayama ,  Masao Uchida

IPC分类号： H01L21/336

CPC分类号： H01L29/7802 ,  H01L21/0465 ,  H01L29/1608 ,  H01L29/66068

摘要： A method of producing a semiconductor device according to the present invention includes: a step of implanting an impurity into a semiconductor layer 2 by using a first implantation mask layer 30, thereby forming a body region 6; a step of implanting an impurity by using the first implantation mask layer 30 and a second implantation mask layer 31, thereby forming a contact region 7 within the body region 6; a step of forming a third implantation mask layer 32, and thereafter selectively removing the second implantation mask layer 31; a step of forming a side wall 34 on a side face of the first implantation mask layer 30; and a step of implanting an impurity to form a source region 8 within the body region 6.

摘要翻译： 根据本发明的制造半导体器件的方法包括：通过使用第一注入掩模层30将杂质注入半导体层2，从而形成体区6的步骤; 通过使用第一注入掩模层30和第二注入掩模层31注入杂质的步骤，从而在体区6内形成接触区7; 形成第三注入掩模层32的步骤，然后选择性地除去第二注入掩模层31; 在第一注入掩模层30的侧面上形成侧壁34的步骤; 以及植入杂质以在体区6内形成源区8的步骤。

公开(公告)号：US20090171544A1

公开(公告)日：2009-07-02

申请号：US12342290

申请日：2008-12-23

申请人： Koutarou Tanaka ,  Haruki Matsuzaki ,  Atsushi Kashiwazaki

发明人： Koutarou Tanaka ,  Haruki Matsuzaki ,  Atsushi Kashiwazaki

IPC分类号： B60W10/10 ,  G06F17/00

CPC分类号： F16H61/12 ,  F16H59/0204 ,  F16H59/12 ,  F16H61/32 ,  F16H2061/326

摘要： A vehicle control system for an automatic transmission includes a range selector for outputting a range instruction signal representing the selected shift range and a range shifter for manually outputting a shift instruction signal, and a by-wire control part for controlling the change-over of the shift range according to the range instruction signal input from the range selector. The by-wire control part has a range control circuit, which uses the shift instruction signal input from the range shifter if the range instruction signal is abnormal while monitoring the range instruction signal input from the range selector.

摘要翻译： 一种用于自动变速器的车辆控制系统包括用于输出表示所选择的变速范围的量程指令信号的量程选择器和用于手动输出移位指令信号的量程移位器，以及用于控制转换指令信号的转换的线控制部件 根据从量程选择器输入的量程指令信号进行换档范围。 线控制部分具有范围控制电路，如果范围指示信号异常，则使用从量程移位器输入的移位指令信号，同时监视从量程选择器输入的范围指令信号。

公开(公告)号：US08386141B2

公开(公告)日：2013-02-26

申请号：US12342290

申请日：2008-12-23

申请人： Koutarou Tanaka ,  Haruki Matsuzaki ,  Atsushi Kashiwazaki

发明人： Koutarou Tanaka ,  Haruki Matsuzaki ,  Atsushi Kashiwazaki

IPC分类号： F16H59/08 ,  F16H61/12

CPC分类号： F16H61/12 ,  F16H59/0204 ,  F16H59/12 ,  F16H61/32 ,  F16H2061/326

摘要： A vehicle control system for an automatic transmission includes a range selector for outputting a range instruction signal representing the selected shift range and a range shifter for manually outputting a shift instruction signal, and a by-wire control part for controlling the change-over of the shift range according to the range instruction signal input from the range selector. The by-wire control part has a range control circuit, which uses the shift instruction signal input from the range shifter if the range instruction signal is abnormal while monitoring the range instruction signal input from the range selector.

摘要翻译： 一种用于自动变速器的车辆控制系统包括用于输出表示所选择的变速范围的量程指令信号的量程选择器和用于手动输出移位指令信号的量程移位器，以及用于控制转换指令信号的转换的线控制部件 根据从量程选择器输入的量程指令信号进行换档范围。 线控制部分具有范围控制电路，如果范围指示信号异常，则使用从量程移位器输入的移位指令信号，同时监视从量程选择器输入的范围指令信号。

公开(公告)号：US08222107B2

公开(公告)日：2012-07-17

申请号：US13126112

申请日：2010-07-28

申请人： Koutarou Tanaka ,  Masahiko Niwayama ,  Masao Uchida

发明人： Koutarou Tanaka ,  Masahiko Niwayama ,  Masao Uchida

IPC分类号： H01L21/336

CPC分类号： H01L29/7802 ,  H01L21/0465 ,  H01L29/1608 ,  H01L29/66068

摘要： A method of producing a semiconductor device according to the present invention includes: a step of implanting an impurity into a semiconductor layer 2 by using a first implantation mask layer 30, thereby forming a body region 6; a step of implanting an impurity by using the first implantation mask layer 30 and a second implantation mask layer 31, thereby forming a contact region 7 within the body region 6; a step of forming a third implantation mask layer 32, and thereafter selectively removing the second implantation mask layer 31; a step of forming a side wall 34 on a side face of the first implantation mask layer 30; and a step of implanting an impurity to form a source region 8 within the body region 6.

摘要翻译： 根据本发明的制造半导体器件的方法包括：通过使用第一注入掩模层30将杂质注入半导体层2，从而形成体区6的步骤; 通过使用第一注入掩模层30和第二注入掩模层31注入杂质的步骤，从而在体区6内形成接触区7; 形成第三注入掩模层32的步骤，然后选择性地除去第二注入掩模层31; 在第一注入掩模层30的侧面上形成侧壁34的步骤; 以及植入杂质以在体区6内形成源区8的步骤。