Polysilicon thin film transistor device and method of fabricating the same
    2.
    发明授权
    Polysilicon thin film transistor device and method of fabricating the same 有权
    多晶硅薄膜晶体管器件及其制造方法

    公开(公告)号:US08889446B2

    公开(公告)日:2014-11-18

    申请号:US13419855

    申请日:2012-03-14

    摘要: A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

    摘要翻译: 多晶硅薄膜晶体管器件包括栅极金属图案,其包括形成在基板上的栅电极和栅极线,栅极金属图案具有阶梯部分,形成在栅极金属图案上的栅极绝缘膜,形成在栅极金属图案上的多晶硅半导体层 所述栅极绝缘膜,所述多晶硅半导体层包括有源区,轻掺杂漏极区,源极区和漏极区,连接到所述源极区的源电极和连接到所述多晶硅半导体层上的所述漏极区的漏极 和与漏电极连接的像素电极。

    Array substrate for fringe field switching mode liquid crystal display and method of manufacturing the same
    4.
    发明授权
    Array substrate for fringe field switching mode liquid crystal display and method of manufacturing the same 有权
    用于条纹场开关模式液晶显示器的阵列衬底及其制造方法

    公开(公告)号:US08465995B2

    公开(公告)日:2013-06-18

    申请号:US13301015

    申请日:2011-11-21

    摘要: A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer; performing an ashing to remove the second photoresist pattern and expose the auxiliary insulating layer therebelow; performing a dry etching to remove the auxiliary insulating layer not covered by the first photoresist pattern and expose a first passivation layer and to form an insulating pattern below the first photoresist pattern, the insulating pattern and the first photoresist pattern forming an undercut shape; forming a transparent conductive material layer having a fourth thickness less than the first thickness; and performing a lift-off process to remove the first photoresist pattern and the transparent conductive material layer thereon together and form a pixel electrode.

    摘要翻译: 制造用于边缘场开关模式液晶显示器的阵列基板的方法包括:形成具有第一厚度的辅助绝缘层; 在辅助绝缘层上形成第一和第二光致抗蚀剂图案; 执行灰化以去除第二光致抗蚀剂图案并在其下方露出辅助绝缘层; 进行干蚀刻以除去未被第一光致抗蚀剂图案覆盖的辅助绝缘层,并露出第一钝化层并在第一光致抗蚀剂图案下形成绝缘图案,绝缘图案和第一光致抗蚀剂图案形成底切形状; 形成具有小于第一厚度的第四厚度的透明导电材料层; 并且执行剥离处理以将第一光致抗蚀剂图案和透明导电材料层去除在一起并形成像素电极。

    In-plane switching mode liquid crystal display device and method for fabricating the same
    5.
    发明授权
    In-plane switching mode liquid crystal display device and method for fabricating the same 有权
    面内切换模式液晶显示装置及其制造方法

    公开(公告)号:US08264653B2

    公开(公告)日:2012-09-11

    申请号:US13241069

    申请日:2011-09-22

    IPC分类号: G02F1/1343

    CPC分类号: G02F1/134363

    摘要: An in-plane switching mode LCD having a plurality of pixels arranged in a matrix includes a gate line formed on a lower substrate, a data line formed such that the data line intersect the gate line to define a pixel region, a TFT (Thin Film Transistor) formed at the intersection of the gate line and the data line, a pixel electrode connected to the TFT, a common electrode to generate a horizontal electric field with the pixel electrode, and a common line supplying common voltage to the common electrode, wherein the common line comprises a first common line formed parallel to the gate line, a second common line formed parallel to the date line in a side portion of the pixel region adjacent to the data line, and a third common line formed parallel to the gate line and disposed between a first row and a second row of the matrix.

    摘要翻译: 具有排列成矩阵的多个像素的面内切换模式LCD包括形成在下基板上的栅极线,形成为使得数据线与栅极线相交以限定像素区域的数据线,TFT(薄膜 晶体管),形成在栅极线和数据线的交点处,连接到TFT的像素电极,用于产生与像素电极的水平电场的公共电极,以及向公共电极提供公共电压的公共线,其中 公共线包括与栅极线平行形成的第一公共线,与数据线相邻的像素区域的侧部平行于日期线形成的第二公共线,以及平行于栅极线形成的第三公共线 并且设置在矩阵的第一行和第二行之间。

    Polysilicon thin film transistor device with gate electrode thinner than gate line
    6.
    发明授权
    Polysilicon thin film transistor device with gate electrode thinner than gate line 有权
    多晶硅薄膜晶体管器件,栅极电极比栅极线更薄

    公开(公告)号:US08158982B2

    公开(公告)日:2012-04-17

    申请号:US11812182

    申请日:2007-06-15

    IPC分类号: H01L29/423 H01L29/786

    摘要: A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

    摘要翻译: 多晶硅薄膜晶体管器件包括栅极金属图案,其包括形成在基板上的栅电极和栅极线,栅极金属图案具有阶梯部分,形成在栅极金属图案上的栅极绝缘膜,形成在栅极金属图案上的多晶硅半导体层 所述栅极绝缘膜,所述多晶硅半导体层包括有源区,轻掺杂漏极区,源极区和漏极区,连接到所述源极区的源电极和连接到所述多晶硅半导体层上的所述漏极区的漏极 和与漏电极连接的像素电极。

    Liquid Crystal Display Device with a Built-in Touch Screen and Method for Manufacturing the Same
    7.
    发明申请
    Liquid Crystal Display Device with a Built-in Touch Screen and Method for Manufacturing the Same 有权
    具有内置触摸屏的液晶显示装置及其制造方法

    公开(公告)号:US20120069257A1

    公开(公告)日:2012-03-22

    申请号:US13198138

    申请日:2011-08-04

    IPC分类号: G02F1/136 H01L33/36

    摘要: A liquid crystal display device with a built-in touch screen comprising a substrate having a pixel region, a thin film transistor formed at the pixel region, the thin film transistor including at least an active layer, a gate electrode, an insulating layer, and a data electrode, a first passivation layer formed on the thin film transistor, a first contact hole formed through a portion of the first passivation layer to expose the data electrode, a common electrode formed on at least one portion of the first passivation layer including inside the first contact hole, the common electrode operable to sense touch, a conductive line formed on at least one portion of the first passivation layer including inside the first contact hole, a second passivation layer formed on the common electrode and the conductive line, a second contact hole formed through a portion of the second passivation layer to expose the conductive line corresponding to the data electrode, and a pixel electrode electrically connected with the conductive line, the pixel electrode formed on the second passivation layer and inside the second contact hole, wherein the data electrode and the pixel electrode are electrically connected via the common electrode and the conductive line.

    摘要翻译: 一种具有内置触摸屏的液晶显示装置,包括具有像素区域的基板,形成在像素区域处的薄膜晶体管,薄膜晶体管至少包括有源层,栅电极,绝缘层和 数据电极,形成在所述薄膜晶体管上的第一钝化层,形成在所述第一钝化层的一部分以暴露所述数据电极的第一接触孔;形成在所述第一钝化层的至少一部分上的公共电极, 第一接触孔,可操作以感测触摸的公共电极,形成在包括第一接触孔内部的第一钝化层的至少一部分上的导电线,形成在公共电极和导电线上的第二钝化层,第二接触孔 接触孔通过第二钝化层的一部分形成,以暴露对应于数据电极的导线,以及像素电极 y,其形成在第二钝化层上和第二接触孔内部,其中数据电极和像素电极经由公共电极和导电线电连接。

    TOUCH SENSING TYPE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    TOUCH SENSING TYPE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    触摸感应式液晶显示装置及其制造方法

    公开(公告)号:US20110228189A1

    公开(公告)日:2011-09-22

    申请号:US13050816

    申请日:2011-03-17

    IPC分类号: G02F1/136 G02F1/1333

    摘要: A touch sensing type liquid crystal display device includes an array substrate including a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate, the anti-static layer having a sheet resistance of about 107 to 109 ohms per square (Ω/sq); and a liquid crystal layer between the first substrate and an inner side of the second substrate.

    摘要翻译: 一种触摸感应型液晶显示装置,包括:第一基板,公共电极,像素电极和触摸感测单元的阵列基板; 彩色滤光片基板,包括第二基板并面对阵列基板; 在所述第二基板的外侧上的抗静电层,所述防静电层具有约107至109欧姆/平方(&OHgr / sq)的薄层电阻; 以及在第一基板和第二基板的内侧之间的液晶层。

    Poly-silicon thin film transistor array substrate and method for fabricating the same
    9.
    发明授权
    Poly-silicon thin film transistor array substrate and method for fabricating the same 有权
    多晶硅薄膜晶体管阵列基板及其制造方法

    公开(公告)号:US07476901B2

    公开(公告)日:2009-01-13

    申请号:US11645770

    申请日:2006-12-27

    申请人: Kum Mi Oh

    发明人: Kum Mi Oh

    IPC分类号: H01L29/04

    摘要: A poly-silicon thin film transistor array substrate includes a gate line and a gate electrode over a substrate, a semiconductor layer having source/drain regions doped with impurity ions, a data line crossing the gate line, and source/drain electrodes connected to the source/drain regions, and a pixel electrode connected to the drain electrode, wherein the semiconductor layer is poly-silicon except for a amorphous silicon region below the gate line.

    摘要翻译: 多晶硅薄膜晶体管阵列基板包括栅极线和衬底上的栅极电极,具有掺杂有杂质离子的源极/漏极区域的半导体层,与栅极线交叉的数据线以及与该栅极线路连接的源极/漏极电极 源极/漏极区域和连接到漏极电极的像素电极,其中半导体层是除了栅极线下方的非晶硅区域之外的多晶硅。

    IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
    10.
    发明申请
    IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    平面切换模式液晶显示装置及其制造方法

    公开(公告)号:US20080284967A1

    公开(公告)日:2008-11-20

    申请号:US12121441

    申请日:2008-05-15

    IPC分类号: G02F1/1343 H01L21/765

    CPC分类号: G02F1/134363

    摘要: The present invention shows that an in-plane switching mode LCD and a method for fabricating the same that substantially obviates one or more problems due to limitations and disadvantages of the related art.To achieve the purpose of the present invention, an in-plane switching mode LCD according to the present invention having a plurality of pixels arranged in a matrix includes a gate line formed on a lower substrate, a data line formed such that the data line intersect the gate line to define a pixel region, a TFT (Thin Film Transistor) formed at the intersection of the gate line and the data line, a pixel electrode connected to the TFT, a common electrode to generate a horizontal electric field with the pixel electrode, and a common line supplying common voltage to the common electrode, wherein the common line comprises a first common line formed parallel to the gate line in a lower portion of the pixel region, a second common line formed parallel to the date line in a side portion of the pixel region adjacent to the data line, and a third common line formed parallel to the gate line in a upper portion of the pixel region, and wherein the data line comprises a pair of sub-lines facing directly with each other in every two pixel regions.As above described, the present invention has an effect of increasing aperture ration by a data line comprising a pair of sub-lines disposed in every two sub-pixels

    摘要翻译: 本发明示出了面内切换模式LCD及其制造方法,其基本上消除了由于现有技术的限制和缺点而引​​起的一个或多个问题。 为了实现本发明的目的,根据本发明的具有排列成矩阵的多个像素的面内切换模式LCD包括形成在下基板上的栅极线,形成为使得数据线相交的数据线 用于限定像素区域的栅极线,形成在栅极线和数据线的交叉点处的TFT(薄膜晶体管),连接到TFT的像素电极,公共电极以与像素电极产生水平电场 以及向公共电极提供公共电压的公共线,其中所述公共线包括在所述像素区域的下部平行于所述栅极线形成的第一公共线,与所述像素区域的所述日期线平行的第二公共线 与数据线相邻的像素区域的部分,以及与像素区域的上部的栅极线平行地形成的第三公共线,并且其中数据线包括面对d的一对子线 在每两个像素区域中彼此直接相连。 如上所述,本发明具有通过包括设置在每两个子像素中的一对子线的数据线增加孔径比的效果