Method of through-etching substrate
    3.
    发明授权
    Method of through-etching substrate 失效
    通过蚀刻基板的方法

    公开(公告)号:US06821901B2

    公开(公告)日:2004-11-23

    申请号:US10084622

    申请日:2002-02-28

    Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.

    Abstract translation: 提供了一种通过蚀刻简化的衬底的方法,并且通过该方法可以在等离子体干蚀刻工艺期间将离子流保持为规则的方法。 根据该方法,在基板的第一平面上形成缓冲层,在缓冲层上形成金属层,在与第一平面相反的第二平面上形成蚀刻掩模图案, 用蚀刻掩模图案蚀刻作为蚀刻掩模。 优选地,基板由单晶硅形成,缓冲层由二氧化硅形成,金属层由铝形成。

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