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1.发明申请公开(公告)号：US20170104152A1
公开(公告)日：2017-04-13
申请号：US15175463
申请日：2016-06-07
申请人： Jinhye BAE , Wonjun LEE , Yoonsung HAN , Hoon HAN , Kyu-Man HWANG , Yongsun KO
发明人： Jinhye BAE , Wonjun LEE , Yoonsung HAN , Hoon HAN , Kyu-Man HWANG , Yongsun KO
摘要： Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.
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2.发明申请公开(公告)号：US20160155934A1
公开(公告)日：2016-06-02
申请号：US14887506
申请日：2015-10-20
申请人： Kyu-Man HWANG , Shi-Jung KIM , Mi-Lim PARK , Jun-Soo BAE , Seung-Woo LEE
发明人： Kyu-Man HWANG , Shi-Jung KIM , Mi-Lim PARK , Jun-Soo BAE , Seung-Woo LEE
摘要： Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.
摘要翻译： 磁性随机存取存储器（MRAM）器件及其制造方法包括在衬底上的至少一个第一磁性材料图案，至少一个第一磁性材料图案上的至少一个第二磁性材料图案，以及至少一个隧道 所述至少一个第一磁性材料图案和所述至少一个第二磁性材料图案之间的阻挡层图案。 所述至少一个第一磁性材料图案的顶表面的宽度可以小于所述至少一个第二磁性材料图案的底表面的宽度。
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公开(公告)号：US20110220858A1
公开(公告)日：2011-09-15
申请号：US13045805
申请日：2011-03-11
申请人： Kyu-Man HWANG , Junsoo Bae , Hwang-Ho Park
发明人： Kyu-Man HWANG , Junsoo Bae , Hwang-Ho Park
IPC分类号： H01L45/00
CPC分类号： H01L27/24
摘要： A semiconductor device and a method of manufacturing the same. The semiconductor device may include a lower electrode having a hollow cylindrical shape of which an upper portion is open, the lower electrode being disposed on a substrate, an insulating structure wrapping the lower electrode and including a nitride, a variable resistance pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the variable resistance pattern.
摘要翻译： 一种半导体器件及其制造方法。 半导体器件可以包括下部电极，其具有上部开放的中空圆柱形形状，下部电极设置在基板上，包围下部电极并包括氮化物的绝缘结构，电连接到 下电极和与可变电阻图形电连接的上电极。
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公开(公告)号：US20120273741A1
公开(公告)日：2012-11-01
申请号：US13443132
申请日：2012-04-10
申请人： Kyu-Man HWANG , Jun-Soo BAE , Sung-Un KWON , Kwang-Ho PARK
发明人： Kyu-Man HWANG , Jun-Soo BAE , Sung-Un KWON , Kwang-Ho PARK
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1683
摘要： A method of manufacturing a phase change memory device includes forming a lower electrode layer pattern and an insulating interlayer covering the lower electrode layer pattern, forming a first opening in the insulating interlayer to expose the lower electrode layer pattern, forming an oxide layer pattern on the sidewall of the first opening and a lower electrode under the oxide layer pattern by partially removing the oxide layer and the lower electrode layer pattern, forming an insulation layer filling a remaining portion of the first opening, removing the oxide layer pattern by a wet etching process to form a second opening, and forming a phase change material pattern on the lower electrode such that the phase change material pattern fills the second opening.
摘要翻译： 一种制造相变存储器件的方法包括：形成下电极层图案和覆盖下电极层图案的绝缘夹层，在绝缘中间层中形成第一开口以露出下电极层图案，在其上形成氧化层图案 通过部分地除去氧化物层和下部电极层图案，形成绝缘层，在第一开口的侧壁和下部电极的下方形成氧化物层图案，形成绝缘层，填充第一开口的剩余部分，通过湿蚀刻工艺去除氧化物层图案 以形成第二开口，并且在下电极上形成相变材料图案，使得相变材料图案填充第二开口。
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公开(公告)号：US09761792B2
公开(公告)日：2017-09-12
申请号：US14887506
申请日：2015-10-20
申请人： Kyu-Man Hwang , Shi-Jung Kim , Mi-Lim Park , Jun-Soo Bae , Seung-Woo Lee
发明人： Kyu-Man Hwang , Shi-Jung Kim , Mi-Lim Park , Jun-Soo Bae , Seung-Woo Lee
摘要： Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.
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公开(公告)号：US08772121B2
公开(公告)日：2014-07-08
申请号：US13443132
申请日：2012-04-10
申请人： Kyu-Man Hwang , Jun-Soo Bae , Sung-Un Kwon , Kwang-Ho Park
发明人： Kyu-Man Hwang , Jun-Soo Bae , Sung-Un Kwon , Kwang-Ho Park
IPC分类号： H01L21/20 , H01L21/8222 , H01L29/02 , H01L47/00 , H01L29/40 , H01L29/768
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1683
摘要： A method of manufacturing a phase change memory device includes forming a lower electrode layer pattern and an insulating interlayer covering the lower electrode layer pattern, forming a first opening in the insulating interlayer to expose the lower electrode layer pattern, forming an oxide layer pattern on the sidewall of the first opening and a lower electrode under the oxide layer pattern by partially removing the oxide layer and the lower electrode layer pattern, forming an insulation layer filling a remaining portion of the first opening, removing the oxide layer pattern by a wet etching process to form a second opening, and forming a phase change material pattern on the lower electrode such that the phase change material pattern fills the second opening.
摘要翻译： 一种制造相变存储器件的方法包括：形成下电极层图案和覆盖下电极层图案的绝缘夹层，在绝缘中间层中形成第一开口以露出下电极层图案，在其上形成氧化层图案 通过部分地除去氧化物层和下部电极层图案，形成绝缘层，在第一开口的侧壁和下部电极的下方形成氧化物层图案，形成绝缘层，填充第一开口的剩余部分，通过湿蚀刻工艺去除氧化物层图案 以形成第二开口，并且在下电极上形成相变材料图案，使得相变材料图案填充第二开口。
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