公开(公告)号：US20170104152A1

公开(公告)日：2017-04-13

申请号：US15175463

申请日：2016-06-07

申请人： Jinhye BAE ,  Wonjun LEE ,  Yoonsung HAN ,  Hoon HAN ,  Kyu-Man HWANG ,  Yongsun KO

发明人： Jinhye BAE ,  Wonjun LEE ,  Yoonsung HAN ,  Hoon HAN ,  Kyu-Man HWANG ,  Yongsun KO

IPC分类号： H01L43/12 ,  H01L21/66 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L22/12 ,  H01L27/101 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.

公开(公告)号：US20170092850A1

公开(公告)日：2017-03-30

申请号：US15203008

申请日：2016-07-06

申请人： Wonjun LEE ,  lnseak HWANG ,  Yongsun KO ,  Changkyu LEE ,  Jinhye BAE ,  Hyunchul SHIN ,  Shinhee HAN ,  Yoonsung HAN

发明人： Wonjun LEE ,  lnseak HWANG ,  Yongsun KO ,  Changkyu LEE ,  Jinhye BAE ,  Hyunchul SHIN ,  Shinhee HAN ,  Yoonsung HAN

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.

公开(公告)号：US20180102254A1

公开(公告)日：2018-04-12

申请号：US15645419

申请日：2017-07-10

申请人： Kwangsu Kim ,  Se-Ho CHA ,  Yongsun KO ,  Keonyoung KIM ,  Kyunghyun KIM ,  ChangSup MUN ,  Choongkee SEONG ,  Sunjoong SONG ,  Jinwoo LEE ,  Hoon HAN

发明人： Kwangsu Kim ,  Se-Ho CHA ,  Yongsun KO ,  Keonyoung KIM ,  Kyunghyun KIM ,  ChangSup MUN ,  Choongkee SEONG ,  Sunjoong SONG ,  Jinwoo LEE ,  Hoon HAN

IPC分类号： H01L21/306 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11582

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/31111 ,  H01L21/47573 ,  H01L21/67086 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath,

公开(公告)号：US20150343495A1

公开(公告)日：2015-12-03

申请号：US14682349

申请日：2015-04-09

申请人： Kyoungseob KIM ,  Yongsun KO ,  SeokHoon KIM ,  Kuntack LEE ,  Hyosan LEE ,  Gilheyun CHOI

发明人： Kyoungseob KIM ,  Yongsun KO ,  SeokHoon KIM ,  Kuntack LEE ,  Hyosan LEE ,  Gilheyun CHOI

IPC分类号： B08B3/02 ,  H01L21/67

CPC分类号： H01L21/67051 ,  B08B3/024

摘要： An apparatus for treating a substrate includes a spin chuck supporting a substrate, a nozzle movably disposed on the spin chuck, the nozzle providing droplets of a treatment liquid onto a surface of the substrate, and a nozzle arm moving the nozzle above the spin chuck, wherein the nozzle arm moves the nozzle horizontally along the surface of the substrate, and vertically with respect to the surface of the substrate, wherein the nozzle arm moves the nozzle between an edge of the substrate and a center of the substrate, the nozzle moving away from the surface of the substrate while approaching toward the center of the substrate, and wherein droplets provided onto the center of the substrate have a smaller vertical spacing than that of droplets provided onto the edge of the substrate.

摘要翻译： 一种用于处理基板的设备包括支撑基板的旋转卡盘，可移动地设置在旋转卡盘上的喷嘴，喷嘴将处理液体的液滴提供到基板的表面上，喷嘴臂使喷嘴移动到旋转卡盘上方， 其中所述喷嘴臂沿着所述基板的表面水平地移动所述喷嘴，并相对于所述基板的表面垂直移动，其中所述喷嘴臂使所述喷嘴在所述基板的边缘和所述基板的中心之间移动，所述喷嘴移开 从衬底的表面接近朝向衬底的中心，并且其中设置在衬底的中心上的液滴具有比设置在衬底的边缘上的液滴更小的垂直间隔。