BATHTUB WITH CUSHION AND PREPARATION METHOD THEREOF
    1.
    发明申请
    BATHTUB WITH CUSHION AND PREPARATION METHOD THEREOF 审中-公开
    具有嵌套的BATHTUB及其制备方法

    公开(公告)号:US20100132109A1

    公开(公告)日:2010-06-03

    申请号:US12481182

    申请日:2009-06-09

    IPC分类号: A47K3/02 B29C41/02

    摘要: The present invention relates to a bathtub with cushion and a preparation method thereof which comprises an external structure layer which forms an external appearance of the bathtub; a foaming layer which is formed on the external structure layer; and a elastic protecting layer which is selected from groups of a rapid-hardening polyurea resin hardened layer, a polyurethane-urea resin hardened layer and an unfoaming painted layer, on the foaming layer.

    摘要翻译: 本发明涉及一种具有衬垫的浴缸及其制备方法,其包括形成浴缸外观的外部结构层; 形成在外部结构层上的发泡层; 以及在发泡层上选自快硬化聚脲树脂硬化层,聚氨酯 - 脲树脂硬化层和未发泡涂层的组的弹性保护层。

    LIQUID CRYSTAL CELL
    2.
    发明申请
    LIQUID CRYSTAL CELL 有权
    液晶电池

    公开(公告)号:US20130201435A1

    公开(公告)日:2013-08-08

    申请号:US13601628

    申请日:2012-08-31

    IPC分类号: C09K19/52

    摘要: A liquid crystal cell, a precursor of the liquid crystal layer, a method of manufacturing a liquid crystal cell, and use of the liquid crystal cell are provided. The liquid crystal cell may be manufactured simply in a consecutive manner using a roll-to-roll process. Also, the liquid crystal cell may be realized as a flexible device, and have an excellent contrast ratio. Such a liquid crystal cell can be applied in various applications including smart windows, window-protecting films, flexible display devices, active retarders for displaying 3D images, or viewing angle-adjusting films.

    摘要翻译: 提供液晶单元,液晶层的前体,液晶单元的制造方法和液晶单元的使用。 可以使用卷对卷方法简单地连续地制造液晶单元。 此外,液晶单元可以实现为柔性装置,并且具有优异的对比度。 这种液晶单元可以应用于各种应用,包括智能窗,窗保护膜,柔性显示装置,用于显示3D图像的主动延迟器或视角调节膜。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20120205622A1

    公开(公告)日:2012-08-16

    申请号:US13454650

    申请日:2012-04-24

    申请人: Kyung Jun KIM

    发明人: Kyung Jun KIM

    IPC分类号: H01L33/06 H01L33/30

    摘要: A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer.

    摘要翻译: 一种半导体发光器件,包括多个第一导电型半导体层; 多个第二导电型半导体层; 所述第一和第二导电类型半导体层之间的有源层,其中所述有源层包括多个量子势垒层和多个量子阱层; 连接到所述第一导电类型半导体层的第一电极; 以及连接到所述第二导电类型半导体层的第二电极,其中所述第一导电类型半导体层包括第一和第二AlGaN基层,并且所述有源层的所述多个量子阱层包括InAlGaN层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110233518A1

    公开(公告)日:2011-09-29

    申请号:US13154133

    申请日:2011-06-06

    申请人: Kyung Jun KIM

    发明人: Kyung Jun KIM

    IPC分类号: H01L33/06

    摘要: A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1,0

    摘要翻译: 一种半导体发光器件,包括:包括第一类型掺杂剂的第一半导体层; 在所述第一半导体层上包括所述第一类型掺杂剂的第二半导体层; 所述有源层包括具有多个量子势垒层和多个量子阱层的多量子阱结构; 在所述有源层上包括第二类型掺杂剂的第三半导体层; 以及在所述第三半导体层上包括所述第二类型掺杂剂的第四半导体层。 第一半导体层具有AlY(GaxIn1-x)1-YN(X = 1,0

    Semiconductor light emitting device and method for manufacturing the same
    9.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US07884350B2

    公开(公告)日:2011-02-08

    申请号:US12247870

    申请日:2008-10-08

    申请人: Kyung Jun Kim

    发明人: Kyung Jun Kim

    IPC分类号: H01L29/06

    摘要: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括第一导电半导体层,第一导电半导体层下的下超级晶格层,第一导电半导体层上的有源层,有源层上的第二导电超晶格层,以及第二导电半导体 层在第二导电超晶格层上。

    Semiconductor light emitting device and method of manufacturing the same
    10.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US07755094B2

    公开(公告)日:2010-07-13

    申请号:US12144187

    申请日:2008-06-23

    IPC分类号: H01L33/00 H01L21/20

    摘要: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a substrate, a mask seed layer formed on the substrate and comprising a II group element, a nitride layer formed on the mask seed layer and comprising a III group element, a first conductive semiconductor layer on the nitride layer, an active layer on the first conductive layer, and a second conducive semiconductor layer on the active layer.

    摘要翻译: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括衬底,形成在衬底上的掩模种子层,并且包括II族元件,在掩模种子层上形成的氮化物层,其包含III族元素,氮化物层上的第一导电半导体层, 在第一导电层上的有源层和有源层上的第二导电半导体层。