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公开(公告)号：US20140047168A1
公开(公告)日：2014-02-13
申请号：US13957901
申请日：2013-08-02
申请人： KYUNG-RYUN KIM , KYUNG-RYUN KIM , KI-WHAN SONG
发明人： KYUNG-RYUN KIM , KYUNG-RYUN KIM , KI-WHAN SONG
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7203 , G11C11/5628 , G11C16/3418 , G11C16/3427
摘要： A method of operating a data storage device includes providing a memory cell array that includes a first word line, a second word line and a buffer configured to store second data to be programmed into the second word line, reading the second data from the buffer, and programming first data into the first word line. A programming condition of the first data being is changed based on the second data read from the buffer.
摘要翻译： 一种操作数据存储装置的方法包括：提供包括第一字线，第二字线和被配置为将待编程的第二数据存储到第二字线中的缓冲器的存储单元阵列，从缓冲器读取第二数据， 并将第一个数据编程到第一个字线。 基于从缓冲器读取的第二数据，改变第一数据的编程条件。
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公开(公告)号：US09720624B2
公开(公告)日：2017-08-01
申请号：US14602990
申请日：2015-01-22
申请人： Sang-kwon Moon , Kyung-ryun Kim , Dong-sub Kim , Kyung-ho Kim
发明人： Sang-kwon Moon , Kyung-ryun Kim , Dong-sub Kim , Kyung-ho Kim
CPC分类号： G06F3/0659 , G06F3/061 , G06F3/0638 , G06F3/0688 , G06F12/0246 , G06F2212/1024 , G06F2212/7201
摘要： According to example embodiments, a method of controller a memory system using a controller includes receiving a first read count command, determining if a read count of a non-volatile memory in the memory system exceeds a threshold value, and performing a first reading operation on the non-volatile memory according to the first read command. If the read count of the non-volatile memory exceeds the threshold value, then addresses are selected to which a plurality of additive reading operation corresponding to the first read command will be performed, in a random neighbor selection operation. The plurality of additive reading operations for checking data of neighboring pages of the page for performing the reading operation are distributed and processed.
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公开(公告)号：US09715341B2
公开(公告)日：2017-07-25
申请号：US14681389
申请日：2015-04-08
申请人： Kyung-Ryun Kim , Sang-Yong Yoon
发明人： Kyung-Ryun Kim , Sang-Yong Yoon
IPC分类号： G06F3/06
CPC分类号： G06F3/061 , G06F3/0619 , G06F3/0653 , G06F3/0673 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/349 , G11C2211/5648
摘要： A method is for operating a memory system including a memory device. The method includes managing program order information of the memory device based on a program order stamp (POS) indicating a relative temporal relationship between program operations of a plurality of memory groups that are included in the memory device, and controlling a read voltage for performing a read operation on the memory device. The read voltage is controlled based on the program order information and a mapping table that stores a read voltage offset and a POS corresponding to the read voltage offset.
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4.发明授权Method controlling read sequence of nonvolatile memory device and memory system performing same 有权方法控制非易失性存储器件的读取顺序和执行相同的存储器系统公开(公告)号：US09431123B2
公开(公告)日：2016-08-30
申请号：US14457424
申请日：2014-08-12
申请人： Kyung-Ryun Kim
发明人： Kyung-Ryun Kim
CPC分类号： G11C16/32 , G11C16/00 , G11C16/26 , G11C29/023 , G11C29/028
摘要： To control a read sequence of a nonvolatile memory device, a plurality of read sequences are set and the read sequences respectively correspond to operating conditions different from each other. The read sequences are performed selectively based on sequence selection rates respectively corresponding to the read sequences. Read latencies of the respective read sequences are monitored and the sequence selection rates are adjusted based on monitoring results of the read latencies.
摘要翻译： 为了控制非易失性存储器件的读取序列，设置多个读取序列，读取序列分别对应于彼此不同的操作条件。 基于分别对应于读取序列的序列选择速率来选择性地执行读取序列。 监视各个读取序列的读取延迟，并且基于读取延迟的监视结果来调整序列选择速率。
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公开(公告)号：US09342447B2
公开(公告)日：2016-05-17
申请号：US13957901
申请日：2013-08-02
申请人： Kyung-Ryun Kim , Sang-Yong Yoon , Ki-Whan Song
发明人： Kyung-Ryun Kim , Sang-Yong Yoon , Ki-Whan Song
CPC分类号： G06F12/0246 , G06F2212/7203 , G11C11/5628 , G11C16/3418 , G11C16/3427
摘要： A method of operating a data storage device includes providing a memory cell array that includes a first word line, a second word line and a buffer configured to store second data to be programmed into the second word line, reading the second data from the buffer, and programming first data into the first word line. A programming condition of the first data being is changed based on the second data read from the buffer.
摘要翻译： 一种操作数据存储装置的方法包括：提供包括第一字线，第二字线和被配置为将待编程的第二数据存储到第二字线中的缓冲器的存储单元阵列，从缓冲器读取第二数据， 并将第一个数据编程到第一个字线。 基于从缓冲器读取的第二数据，改变第一数据的编程条件。
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6.发明申请METHOD OF READING DATA FROM A NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY DEVICE, AND METHOD OF OPERATING A MEMORY SYSTEM 有权从非易失性存储器件读取数据的方法，非易失性存储器件以及操作存储器系统的方法公开(公告)号：US20140281770A1
公开(公告)日：2014-09-18
申请号：US14186504
申请日：2014-02-21
申请人： Kyung-Ryun Kim , Sang-Yong Yoon
发明人： Kyung-Ryun Kim , Sang-Yong Yoon
CPC分类号： G11C29/50 , G06F11/1048 , G06F11/1068 , G11C16/00 , G11C16/3418 , G11C29/021 , G11C29/028 , G11C29/42 , G11C2207/2254
摘要： In a method of reading data from a nonvolatile memory device, a first read operation for memory cells coupled to a first word line is performed by applying a first read voltage to the first word line, a first read retry is performed to obtain an optimal read level regardless or independent of whether data read by the first read operation is error-correctable, and the optimal read level is stored to perform a subsequent second read operation using the optimal read level. Related methods and devices are also discussed.
摘要翻译： 在从非易失性存储器件读取数据的方法中，通过对第一字线施加第一读取电压来执行耦合到第一字线的存储器单元的第一读取操作，执行第一读取重试以获得最佳读取 而不管第一读取操作读取的数据是否可纠错，并且存储最佳读取级别以使用最佳读取级别执行后续的第二读取操作。 还讨论了相关的方法和设备。
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7.发明申请MEMORY DEVICE, MEMORY SYSTEM, METHOD OF OPERATING THE MEMORY DEVICE, AND METHOD OF OPERATING THE MEMORY SYSTEM 有权存储器件，存储器系统，操作存储器件的方法和操作存储器系统的方法公开(公告)号：US20160124642A1
公开(公告)日：2016-05-05
申请号：US14743458
申请日：2015-06-18
申请人： KYUNG-RYUN KIM , JOON-SUC JANG
发明人： KYUNG-RYUN KIM , JOON-SUC JANG
IPC分类号： G06F3/06
CPC分类号： G06F3/061 , G06F3/0653 , G06F3/0673 , G06F12/0246 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/34 , G11C16/349
摘要： A method of operating a memory system, including a memory device, includes managing program order information of the memory device based on a program order stamp (POS) indicating a relative temporal relationship between program operations of a plurality of memory groups that are included in the memory device. The method includes generating a first mapping table that stores a read voltage offset and an upper POS corresponding to the read voltage offset, by using a plurality of voltage levels that are sequentially reduced, and generating a second mapping table that stores the read voltage offset and a lower POS corresponding to the read voltage offset, by using a plurality of voltage levels that are sequentially increased. Furthermore, a read voltage for performing a read operation on the memory device is variably determined based on the first and second mapping tables and the program order information.
摘要翻译： 一种操作包括存储器设备的存储器系统的方法，包括：基于指示包括在所述存储器设备中的多个存储器组的程序操作之间的相对时间关系的程序顺序标记（POS）来管理所述存储器件的程序顺序信息 存储设备。 该方法包括通过使用顺序减少的多个电压电平来产生存储读取电压偏移和与读取电压偏移相对应的上位POS的第一映射表，并且生成存储读取电压偏移的第二映射表和 通过使用依次增加的多个电压电平，对应于读取电压偏移的较低的POS。 此外，基于第一和第二映射表和程序顺序信息可变地确定用于对存储器件执行读取操作的读取电压。
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公开(公告)号：US20140198569A1
公开(公告)日：2014-07-17
申请号：US14150320
申请日：2014-01-08
申请人： Kyung-ryun KIM , Sang-yong YOON
发明人： Kyung-ryun KIM , Sang-yong YOON
IPC分类号： G11C16/28
CPC分类号： G11C16/28 , G11C11/5642 , G11C16/0483
摘要： A flash memory, a flash memory system, and an operating method thereof. The method of operating a flash memory includes counting the number of memory cells having threshold voltages included in a first adjacent threshold voltage range (defined by a first reference read voltage for distinguishing between initially separated adjacently located threshold voltage distributions and a first search read voltage having a first voltage difference from the first reference read voltage), and a second adjacent threshold voltage range (defined by the first reference read voltage and a second search read voltage having a second voltage difference from the first reference read voltage), and setting a first optimal read voltage based on the difference between the first and second counted numbers of the memory cells.
摘要翻译： 闪存，闪存系统及其操作方法。 操作闪速存储器的方法包括对具有包括在第一相邻阈值电压范围内的阈值电压的存储器单元的数量进行计数（由用于区分初始分离的相邻阈值电压分布的第一参考读取电压和具有 与第一参考读取电压的第一电压差）和第二相邻阈值电压范围（由第一参考读取电压和具有与第一参考读取电压的第二电压差的第二搜索读取电压定义），并且设置第一 基于存储器单元的第一和第二计数之间的差的最佳读取电压。
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9.发明申请公开(公告)号：US20160124647A1
公开(公告)日：2016-05-05
申请号：US14666476
申请日：2015-03-24
申请人： KYUNG-RYUN KIM
发明人： KYUNG-RYUN KIM
IPC分类号： G06F3/06
CPC分类号： G06F3/0679 , G06F3/061 , G06F3/0659
摘要： A method of operating a memory system includes managing program order information of the memory device based on program order stamps (POSs) indicating relative temporal relationships between program operations performed in relation to a plurality of memory groups included in the memory device, and controlling operations directed to the plurality of memory groups in response to the program order information.
摘要翻译： 一种操作存储器系统的方法包括：基于指示相对于包括在存储器件中的多个存储器组执行的程序操作之间的相对时间关系的程序顺序标记（POS）来管理存储器件的程序顺序信息，以及控制操作 响应于所述程序订单信息而将所述多个存储器组分配给所述多个存储器组。
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10.发明申请METHOD CONTROLLING READ SEQUENCE OF NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM PERFORMING SAME 有权控制非易失性存储器件的读取顺序和执行其的存储器系统的方法公开(公告)号：US20150049547A1
公开(公告)日：2015-02-19
申请号：US14457424
申请日：2014-08-12
申请人： KYUNG-RYUN KIM
发明人： KYUNG-RYUN KIM
CPC分类号： G11C16/32 , G11C16/00 , G11C16/26 , G11C29/023 , G11C29/028
摘要： To control a read sequence of a nonvolatile memory device, a plurality of read sequences are set and the read sequences respectively correspond to operating conditions different from each other. The read sequences are performed selectively based on sequence selection rates respectively corresponding to the read sequences. Read latencies of the respective read sequences are monitored and the sequence selection rates are adjusted based on monitoring results of the read latencies.
摘要翻译： 为了控制非易失性存储器件的读取序列，设置多个读取序列，读取序列分别对应于彼此不同的操作条件。 基于分别对应于读取序列的序列选择速率来选择性地执行读取序列。 监视各个读取序列的读取延迟，并且基于读取延迟的监视结果来调整序列选择速率。
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