公开(公告)号：US20110034034A1

公开(公告)日：2011-02-10

申请号：US12851794

申请日：2010-08-06

申请人： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Ganesh Balasubramanian ,  Lipyeow Yap ,  Jianhua Zhou ,  Thomas Nowak

发明人： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Ganesh Balasubramanian ,  Lipyeow Yap ,  Jianhua Zhou ,  Thomas Nowak

IPC分类号： H01L21/46 ,  B05C13/00 ,  B23Q3/00

CPC分类号： H01L21/68 ,  B05C13/00 ,  C23C16/4585 ,  H01J37/32091 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/68728 ,  H01L21/6875

摘要： A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

摘要翻译： 提供了一种用于加热室中的衬底的方法和装置。 用于将基板定位在处理室中的装置。 在一个实施例中，该装置包括基板支撑组件，该基板支撑组件具有适于接收基板的支撑表面和用于在平行于支撑表面的距离处支撑基板的多个定心构件，并且用于使基板相对于参考轴线基本垂直 到支撑面。 多个定心构件沿着支撑表面的周边可移动地设置，并且多个定心构件中的每一个包括用于接触或支撑衬底的周缘的第一端部。

公开(公告)号：US08274017B2

公开(公告)日：2012-09-25

申请号：US12641819

申请日：2009-12-18

申请人： Lipyeow Yap ,  Tuan Anh Nguyen ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jianhua Zhou

发明人： Lipyeow Yap ,  Tuan Anh Nguyen ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jianhua Zhou

IPC分类号： H05B3/68

CPC分类号： H01L21/67109 ,  H01L21/68792

摘要： Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

摘要翻译： 本发明的实施例一般涉及半导体处理室，更具体地说，涉及用于半导体处理室的加热支撑基座。 在一个实施例中，提供了一种用于半导体处理室的基座。 基座包括基板支撑件，该基板支撑件包括导电材料并且具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口， 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件，所述冷却通道组件设置在所述轴体内，用于经由内部冷却路径从所述基座移除热量，其中所述基板支撑件具有位于 加热元件和环形冷却通道。

公开(公告)号：US20110147363A1

公开(公告)日：2011-06-23

申请号：US12641819

申请日：2009-12-18

申请人： Lipyeow Yap ,  Tuan Anh Nguyen ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jianhua Zhou

发明人： Lipyeow Yap ,  Tuan Anh Nguyen ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jianhua Zhou

IPC分类号： H05B3/68

CPC分类号： H01L21/67109 ,  H01L21/68792

摘要： Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

摘要翻译： 本发明的实施例一般涉及半导体处理室，更具体地说，涉及用于半导体处理室的加热支撑基座。 在一个实施例中，提供了一种用于半导体处理室的基座。 基座包括基板支撑件，该基板支撑件包括导电材料并且具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口， 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件，所述冷却通道组件设置在所述轴体内，用于经由内部冷却路径从所述基座移除热量，其中所述基板支撑件具有位于 加热元件和环形冷却通道。

公开(公告)号：US08778813B2

公开(公告)日：2014-07-15

申请号：US13102846

申请日：2011-05-06

申请人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

发明人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C16/509 ,  H01L21/67 ,  H01L21/30 ,  H01L21/42 ,  C23C16/00 ,  B05C11/11

CPC分类号： H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。

公开(公告)号：US20110294303A1

公开(公告)日：2011-12-01

申请号：US13102846

申请日：2011-05-06

申请人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

发明人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

IPC分类号： C23C16/44 ,  H01L21/30 ,  C23C16/509

CPC分类号： H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。

公开(公告)号：US20120258259A1

公开(公告)日：2012-10-11

申请号：US13440720

申请日：2012-04-05

申请人： Amit Bansal ,  Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Thomas Nowak

发明人： Amit Bansal ,  Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Thomas Nowak

IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC分类号： C23C16/56 ,  C23C16/0272 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/54

摘要： Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

摘要翻译： 本发明的实施例提供了用于在相同的室中进行UV处理和化学处理和/或沉积的装置和方法。 本发明的一个实施例提供了一种处理室，其包括设置在位于处理室的内部体积中的基板支撑件上方的UV透明气体分配喷头，设置在UV透明气体分配喷头上方的UV透明窗口和设置在UV透明气体分配喷头上的UV单元 在内容之外。 UV单元被配置为通过UV透明窗口和UV透明气体分配喷头将UV光引向基板支撑。

公开(公告)号：US08203126B2

公开(公告)日：2012-06-19

申请号：US12841935

申请日：2010-07-22

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： G01N21/00 ,  G01N21/33 ,  B01J19/08 ,  B29C35/08

CPC分类号： B05D3/0209 ,  B05D3/0493 ,  B05D3/067 ,  H01L21/31058 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20100285240A1

公开(公告)日：2010-11-11

申请号：US12841935

申请日：2010-07-22

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： B05D3/06

CPC分类号： B05D3/0209 ,  B05D3/0493 ,  B05D3/067 ,  H01L21/31058 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US07777198B2

公开(公告)日：2010-08-17

申请号：US11686881

申请日：2007-03-15

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： H01J37/20

CPC分类号： B05D3/0209 ,  B05D3/0493 ,  B05D3/067 ,  H01L21/31058 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US07566891B2

公开(公告)日：2009-07-28

申请号：US11686878

申请日：2007-03-15

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： G01N21/00 ,  G01N21/33 ,  B01J19/08 ,  B29C35/08

CPC分类号： B05D3/067

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。