Abstract:
The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Ω-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.
Abstract:
An apparatus is provided for emulation of a power system. The apparatus includes a plurality of programmable elements which are selectively connectable to one another. Each programmable element includes at least two elements selected from the group consisting of a generator element, a line element and a load element. A programmable switch element is operable to selectively connect the at least two elements of each programmable element to one another, and to selectively connect the programmable element to one or more other programmable elements. A system, which incorporates the apparatus, is also provided for emulating a power system incorporating such apparatus.
Abstract:
A magnetic field sensor comprises a reference magnetic field generator (8), a magnetic field sensing cell (6) including Hall effect sensing elements (12), and a signal processing circuit (4) connected to the output (11) of the magnetic field sensing cell and comprising one or more feedback lines (27, 28) for correcting error fluctuations in the transfer characteristic of the magnetic field sensor. The reference magnetic field generator is adapted to generate a frequency modulated reference magnetic field. The signal processing circuit further includes a modulator connected to the magnetic field sensing cell, adapted to modulate the output signal thereof at a frequency different from the modulation frequency of the reference magnetic field generator.
Abstract:
An electronic amplifier circuit comprising an operational amplifier circuit, such as a two-stage operational amplifier circuit, in tandem with a operational transconductance amplifier. The electronic amplifier circuit has high open-loop gain and high gain-bandwidth while maintaining stability over a wide range of operating parameters.
Abstract:
There are many inventions described and illustrated herein. In a first aspect, the present invention is a technique and circuitry for reading data that is stored in memory cells. In one embodiment of this aspect, the present invention is a technique and circuitry for generating a reference current that is used, in conjunction with a sense amplifier, to read data that is stored in memory cells of a DRAM device. The technique and circuitry for generating a reference current may be implemented using an analog configuration, a digital configuration, and/or combinations of analog and digital configurations.
Abstract:
There are many inventions described and illustrated herein. In a first aspect, the present invention is a technique and circuitry for reading data that is stored in memory cells. In one embodiment of this aspect, the present invention is a technique and circuitry for generating a reference current that is used, in conjunction with a sense amplifier, to read data that is stored in memory cells of a DRAM device. The technique and circuitry for generating a reference current may be implemented using an analog configuration, a digital configuration, and/or combinations of analog and digital configurations.
Abstract:
Magnetic field sensor including a magnetic field sensing circuit (2) comprising a reference magnetic field generator (8) and a magnetic field sensing cell (6), and a signal processing circuit (4) connected to the output of the magnetic field sensing cell and comprising a demodulator circuit and a gain correction feedback circuit (30, 28, 47) for correcting error fluctuations in the transfer characteristic of the magnetic field sensor. The sensor further comprises a reference current generator (3) configured to generate a reference current I ref, the reference current generator connected to the magnetic field sensing circuit (2) configured for generating the reference magnetic field B ref and to the gain correction feedback circuit configured for providing a reference signal (yref) to which an output signal of the demodulator circuit may be compared.
Abstract:
An integrated circuit comprises a delta-sigma modulator incorporating a delta-sigma modulation loop having an analog-to-digital converter in a forward path and a digital-to-analog converter in a feedback path such that the ADC is arranged to receive samples of an analog input signal. The ADC is operably coupled to auto-ranging logic arranged to shift a digital output signal from the ADC representative of the analog input signal to counteract an effect of an input variation of the analog input signal. In this manner, the application of auto-ranging logic with a self-recovery technique supports a reduction of the number of comparators required in a multi-bit delta-sigma ADC.
Abstract:
The tunable impedance circuit comprises capacitors C1 and C2, an inductor L1, and an inductor L2 magnetically coupled with the inductor L1. The control current Icontrol with variable phase and amplitude from the control circuit 13 flows in the inductor L2. The impedance of the inductor L1 is changed by changing the phase and amplitude of the control current Icontrol. The output impedance is set to an optimum level by setting an effective inductance and an effective quality factor of the tunable impedance circuit 12a to be optimum by means of the phase and amplitude of the control current Icontrol relative to output current IRF of RF PA 11.
Abstract:
There are many inventions described and illustrated herein. In a first aspect, the present invention is a technique and circuitry for reading data that is stored in memory cells. In one embodiment of this aspect, the present invention is a technique and circuitry for generating a reference current that is used, in conjunction with a sense amplifier, to read data that is stored in memory cells of a DRAM device. The technique and circuitry for generating a reference current may be implemented using an analog configuration, a digital configuration, and/or combinations of analog and digital configurations.