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15 条记录 (耗时 0.015 秒)

    Technique to generate negative conductance in CMOS tuned cascode RF amplifiers
    2.
    发明授权
    Technique to generate negative conductance in CMOS tuned cascode RF amplifiers 失效
    在CMOS调谐共源共RF放大器中产生负电导的技术

    公开(公告)号：US06292060B1

    公开(公告)日：2001-09-18

    申请号：US09395288

    申请日：1999-09-13

    申请人： Kiat-Seng Yeo ,  Kok Lim Chan ,  Manh Anh Do ,  Jian Guo Ma ,  Johnny Kok Wai Chew

    发明人： Kiat-Seng Yeo ,  Kok Lim Chan ,  Manh Anh Do ,  Jian Guo Ma ,  Johnny Kok Wai Chew

    IPC分类号： H03F3191

    CPC分类号： H03F1/56 ,  H03F1/223 ,  H03F2200/294 ,  H03F2200/369 ,  H03F2200/372

    摘要： In this invention a single additional capacitor is added to a tuned cascode LNA which boosts the circuit Q and the gain of the amplifier. The added capacitor creates a negative real part of the impedance which when combined with the impedance of the LC tank circuit improves both the Q and the gain of the amplifier. The capacitor does not dissipate any power, and being a passive device the capacitor does not add additional noise to the circuit. With an improved gain there is a much improved signal to noise ratio. The higher Q allows the amplifier to provide some additional bandpass and reduce image reduction requirements in subsequent amplifier stages.

    摘要翻译： 在本发明中，将单个附加电容器添加到调谐共源共栅LNA，其升高电路Q和放大器的增益。 增加的电容产生阻抗的负实部，当与LC谐振电路的阻抗相结合时，可以提高放大器的Q和增益。 电容器不会耗散任何电源，而作为无源器件，电容器不会对电路增加额外的噪声。 随着改进的增益，信噪比有了很大改善。 较高的Q允许放大器提供一些额外的带通，并降低后续放大器级中的图像降低要求。

    Integrated transformer and method of fabrication thereof
    4.
    发明授权
    Integrated transformer and method of fabrication thereof 有权
    集成变压器及其制造方法

    公开(公告)号：US07570144B2

    公开(公告)日：2009-08-04

    申请号：US11750341

    申请日：2007-05-18

    申请人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    发明人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    IPC分类号： H01F5/00

    CPC分类号： H01F17/0006 ,  H01F17/0013 ,  H01F19/08 ,  H01F27/2804 ,  H01F41/041 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/4902 ,  H01L2924/00

    摘要： An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.

    摘要翻译： 集成变压器结构包括与横向轴线相关联的第一线圈元件，第一线圈元件具有至少一匝。 第一线圈元件包括设置在第一横向水平面上的第一部分和设置在第二横向水平面上的第二部分。 第一和第二横向水平面沿着所述横向轴线相互间隔开。 第一和第二部分从所述轴线横向移位不同的相应距离。 所述第一线圈元件的至少一个交叉部分，其中所述第一线圈元件被配置为提供通过所述交叉部分穿过所述交叉部分的所述第一线圈元件的所述第一部分的至少一部分的导电路径，并且随后通过 第一线圈元件的第二部分的至少一部分，其中沿着所述路径的流动方向的任何变化在横向方向上小于90°。

    TRANSFORMER WITH EFFECTIVE HIGH TURN RATIO
    5.
    发明申请
    TRANSFORMER WITH EFFECTIVE HIGH TURN RATIO 有权
    具有高有效转换比的变压器

    公开(公告)号：US20080284553A1

    公开(公告)日：2008-11-20

    申请号：US11779892

    申请日：2007-07-19

    申请人： Chee Chong LIM ,  Kok Wai CHEW ,  Kiat Seng YEO ,  Suh Fei LIM ,  Manh Anh DO ,  Lap CHAN

    发明人： Chee Chong LIM ,  Kok Wai CHEW ,  Kiat Seng YEO ,  Suh Fei LIM ,  Manh Anh DO ,  Lap CHAN

    IPC分类号： H01F5/00 ,  H01F27/28 ,  H01F41/02

    CPC分类号： H01F27/2804 ,  H01F17/0013 ,  H01F27/006 ,  H01F2017/0073 ,  H01L2924/3011 ,  Y10T29/4902

    摘要： Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5 p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.

    摘要翻译： 本发明的实施例提供了一种变压器，包括：第一线圈元件，其沿着横向具有横向轴线，所述第一线圈元件具有p匝，其中p大于或等于1; 以及第二线圈元件，其具有大致平行于所述第一线圈元件的横向轴线的横轴，所述第二线圈元件具有n圈，其中n大于或等于5p; 其中所述第一和第二线圈元件布置成沿平行于横向轴线的横向方向和横向方向沿着所述第二线圈元件的长度的一部分在所述线圈元件之间提供电磁耦合，其中所述横向方向是 垂直于横轴。

    High performance integrated varactor on silicon
    7.
    发明授权
    High performance integrated varactor on silicon 有权
    硅片上高性能集成变容二极管

    公开(公告)号：US06521939B1

    公开(公告)日：2003-02-18

    申请号：US09672764

    申请日：2000-09-29

    申请人： Kiat-Seng Yeo ,  Chun Qi Geng ,  Kok-Wai Chew ,  Manh-Anh Do ,  Jian Guo Ma

    发明人： Kiat-Seng Yeo ,  Chun Qi Geng ,  Kok-Wai Chew ,  Manh-Anh Do ,  Jian Guo Ma

    IPC分类号： H01L27108

    CPC分类号： H01L29/94 ,  H01L27/0808 ,  H01L29/66181

    摘要： A new MOS varactor device is described. A bottom electrode comprises a plurality of diffusion junctions in a semiconductor substrate. The semiconductor substrate may be n-type or p-type. The diffusion junctions are arranged in a two-dimensional array. The diffusion junction may be either n-type or p-type. The diffusion junctions may be contained in a p-well or an n-well. A dielectric layer overlies the semiconductor substrate. A top electrode overlies the dielectric layer. The top electrode comprises a single polygon containing a two-dimensional array of openings therein that exposes the diffusion junctions. The top electrode preferably comprises polysilicon. An interlevel dielectric layer overlies the top electrode and the diffusion junction. The interlevel dielectric layer has a two-dimensional array of contact openings that expose the underlying diffusion junctions. A patterned metal layer overlies the interlevel dielectric layer and contacts the diffusion junctions through the contact openings.

    摘要翻译： 描述了一种新的MOS变容二极管装置。 底部电极在半导体衬底中包括多个扩散结。 半导体衬底可以是n型或p型。 扩散结被排列成二维阵列。 扩散结可以是n型或p型。 扩散结可以包含在p阱或n阱中。 电介质层覆盖在半导体衬底上。 顶部电极覆盖在电介质层上。 顶部电极包括单个多边形，其中包含其中的开口的二维阵列，其暴露扩散结。 顶部电极优选包括多晶硅。 层间电介质层覆盖上电极和扩散结。 层间电介质层具有暴露下面的扩散结的接触开口的二维阵列。 图案化金属层覆盖层间电介质层，并通过接触开口接触扩散接头。

    Integrated helix coil inductor on silicon
    9.
    发明授权
    Integrated helix coil inductor on silicon 有权

    公开(公告)号：US06535098B1

    公开(公告)日：2003-03-18

    申请号：US09519866

    申请日：2000-03-06

    申请人： Kiat Seng Yeo ,  Hai Peng Tan ,  Jian Guo Ma ,  Manh Anh Do ,  Kok Wai Johnny Chew

    发明人： Kiat Seng Yeo ,  Hai Peng Tan ,  Jian Guo Ma ,  Manh Anh Do ,  Kok Wai Johnny Chew

    IPC分类号： H01F500

    CPC分类号： H01L28/10 ,  H01L27/08

    摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.

    Transformer with effective high turn ratio
    10.
    发明授权
    Transformer with effective high turn ratio 有权
    变压器有效高匝数比

    公开(公告)号：US08242872B2

    公开(公告)日：2012-08-14

    申请号：US11779892

    申请日：2007-07-19

    申请人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    发明人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    IPC分类号： H01F5/00 ,  H01F27/28

    CPC分类号： H01F27/2804 ,  H01F17/0013 ,  H01F27/006 ,  H01F2017/0073 ,  H01L2924/3011 ,  Y10T29/4902

    摘要： Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.

    摘要翻译： 本发明的实施例提供了一种变压器，包括：第一线圈元件，其沿着横向具有横向轴线，所述第一线圈元件具有p匝，其中p大于或等于1; 以及第二线圈元件，其具有大致平行于所述第一线圈元件的横向轴线的横轴，所述第二线圈元件具有n匝，其中n大于或等于5p; 其中所述第一和第二线圈元件布置成沿平行于横向轴线的横向方向和横向方向沿着所述第二线圈元件的长度的一部分在所述线圈元件之间提供电磁耦合，其中所述横向方向是 垂直于横轴。