公开(公告)号：US08729451B2

公开(公告)日：2014-05-20

申请号：US13221736

申请日：2011-08-30

申请人： Manoj Bikumandla

发明人： Manoj Bikumandla

IPC分类号： H01J40/14 ,  H03G3/20 ,  H01L27/00 ,  H04N3/14

CPC分类号： H04N5/3598 ,  H04N5/3559

摘要： A method of operating an image sensor includes adjusting a capacitance coupled to a circuit node within a pixel cell. The circuit node is coupled to selectively receive an image charge acquired by a photo-sensor of the pixel cell. A conversion gain is selected from multiple conversion gains for the pixel cell by adjusting the capacitance. A voltage level from multiple voltage levels is selected for use as a reset signal when the reset signal is asserted. The reset signal controls resetting of the circuit node during operation of the pixel cell. The voltage level is selected dependent upon which of the multiple conversion gains is selected by adjusting the capacitance. The reset signal is asserted to reset a voltage at the circuit node.

摘要翻译： 操作图像传感器的方法包括调整耦合到像素单元内的电路节点的电容。 电路节点被耦合以选择性地接收由像素单元的光电传感器获取的图像电荷。 通过调整电容，从像素单元的多个转换增益中选择转换增益。 当复位信号被置位时，选择多个电压电平的电压电平作为复位信号。 复位信号控制像素单元操作期间电路节点的复位。 选择电压电平取决于通过调整电容来选择多个转换增益中的哪一个。 复位信号被置位以复位电路节点处的电压。

公开(公告)号：US20120032235A1

公开(公告)日：2012-02-09

申请号：US12853160

申请日：2010-08-09

申请人： Manoj Bikumandla

发明人： Manoj Bikumandla

IPC分类号： H01L27/092

CPC分类号： H01L27/00 ,  G01N27/4145 ,  G01N27/4148

摘要： A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

摘要翻译： 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。

公开(公告)号：US08642938B2

公开(公告)日：2014-02-04

申请号：US13350609

申请日：2012-01-13

申请人： Manoj Bikumandla ,  Sasidhar Saladi

发明人： Manoj Bikumandla ,  Sasidhar Saladi

IPC分类号： H01L27/00 ,  G01C3/00 ,  G01C3/08

CPC分类号： H01L27/14612 ,  G01S7/4863 ,  G01S7/4865 ,  G01S17/10 ,  G01S17/89

摘要： A time of flight pixel includes a photodiode that accumulates charge in response to light incident upon the photodiode. A first transfer transistor is couple between the photodiode and a first charge storage device to selectively transfer charge to the first charge storage device from the photodiode. A second transfer transistor coupled between the photodiode and a second charge storage device to selectively transfer charge to the second charge storage device from the photodiode. An enable transistor is coupled between the first charge storage device and a readout node coupled to the second charge storage device to selectively couple the first charge storage device to the readout node. An amplifier transistor having a gate is also coupled to a readout node.

摘要翻译： 飞行时间像素包括响应入射在光电二极管上的光积累电荷的光电二极管。 第一传输晶体管耦合在光电二极管和第一电荷存储装置之间，以从光电二极管选择性地将电荷转移到第一电荷存储装置。 耦合在光电二极管和第二电荷存储装置之间的第二传输晶体管，用于从光电二极管选择性地将电荷转移到第二电荷存储装置。 使能晶体管耦合在第一电荷存储器件和耦合到第二电荷存储器件的读出节点之间，以选择性地将第一电荷存储器件耦合到读出节点。 具有栅极的放大器晶体管也耦合到读出节点。

公开(公告)号：US20130140432A1

公开(公告)日：2013-06-06

申请号：US13308961

申请日：2011-12-01

申请人： Manoj Bikumandla

发明人： Manoj Bikumandla

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0232

CPC分类号： H01L27/14636 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689

摘要： Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index equal to or greater than the refractive index of the substrate. Other implementations are disclosed and claimed.

摘要翻译： 包括具有形成在正面上或附近的前侧，后侧和感光区域的基板的像素的实施方式，形成在前侧的电介质层和具有底侧和顶侧的金属叠层， 底面位于电介质层上。 在电介质层和金属叠层中形成导光体，并且从基板的前侧延伸到金属叠层的顶侧，导光体的折射率等于或大于基板的折射率。 公开并要求保护其他实施方式。

公开(公告)号：US08519490B2

公开(公告)日：2013-08-27

申请号：US12853160

申请日：2010-08-09

申请人： Manoj Bikumandla

发明人： Manoj Bikumandla

IPC分类号： H01L27/146 ,  G01N27/26

CPC分类号： H01L27/00 ,  G01N27/4145 ,  G01N27/4148

摘要： A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

公开(公告)号：US20130092982A1

公开(公告)日：2013-04-18

申请号：US13273026

申请日：2011-10-13

申请人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

发明人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

IPC分类号： H01L27/148 ,  H01L31/18 ,  H01L31/101

CPC分类号： H01L27/14616 ,  H01L27/14689

摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

摘要翻译： 包括感光元件，浮动扩散区域和转印装置的图像传感器像素的实施例。 感光元件设置在基板层中，用于响应于光积累图像电荷。 浮动扩散区域设置在衬底层中以从感光元件接收图像电荷。 转移装置设置在感光元件和浮动扩散区域之间以选择性地将图像电荷从感光元件转移到浮动扩散区域。 传输装置包括掩埋沟道器件，其包括设置在掩埋沟道掺杂区域上的掩埋沟道栅极。 转移装置还包括表面通道装置，其包括设置在表面通道区域上的表面通道门。 表面通道装置与掩埋通道装置串联。 表面沟道栅极具有与掩埋沟道栅极相反的极性。

公开(公告)号：US09698185B2

公开(公告)日：2017-07-04

申请号：US13273026

申请日：2011-10-13

申请人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

发明人： Gang Chen ,  Sing-Chung Hu ,  Hsin-Chih Tai ,  Duli Mao ,  Manoj Bikumandla ,  Wei Zheng ,  Yin Qian ,  Zhibin Xiong ,  Vincent Venezia ,  Keh-Chiang Ku ,  Howard E. Rhodes

IPC分类号： H01L27/148 ,  H01L31/062 ,  H01L31/101 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14616 ,  H01L27/14689

摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

公开(公告)号：US08680454B2

公开(公告)日：2014-03-25

申请号：US13308961

申请日：2011-12-01

申请人： Manoj Bikumandla

发明人： Manoj Bikumandla

IPC分类号： H01L27/00 ,  H01L27/148

CPC分类号： H01L27/14636 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689

摘要： Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index equal to or greater than the refractive index of the substrate. Other implementations are disclosed and claimed.

摘要翻译： 包括具有形成在正面上或附近的前侧，后侧和感光区域的基板的像素的实施方式，形成在前侧的电介质层和具有底侧和顶侧的金属叠层， 底面位于电介质层上。 在电介质层和金属叠层中形成导光体，并且从基板的前侧延伸到金属叠层的顶侧，导光体的折射率等于或大于基板的折射率。 公开并要求保护其他实施方式。

公开(公告)号：US08569700B2

公开(公告)日：2013-10-29

申请号：US13413456

申请日：2012-03-06

申请人： Manoj Bikumandla

发明人： Manoj Bikumandla

IPC分类号： G01J5/02

CPC分类号： H01L25/043 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.

摘要翻译： 一种装置包括：第一光电检测器阵列，包括设置在半导体材料中的可见光光电检测器，用于检测入射在半导体材料上的光中包括的可见光。 该装置还包括第二光电检测器阵列，包括设置在半导体材料中的飞行时间（“TOF”）光电检测器，以从入射在半导体材料上的光所包含的物体反射的反射光中捕获TOF数据。 从物体反射的反射光通过可见光光电检测器的光路和半导体材料的厚度被引导到TOF光电检测器。 第一光电检测器阵列的可见光光电检测器沿着物体和第二光电检测器阵列的TOF光电检测器之间的光路布置在半导体材料中。

公开(公告)号：US20130234029A1

公开(公告)日：2013-09-12

申请号：US13413456

申请日：2012-03-06

申请人： Manoj Bikumandla

发明人： Manoj Bikumandla

IPC分类号： H01L27/146 ,  H01L31/0232

CPC分类号： H01L25/043 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.

摘要翻译： 一种装置包括：第一光电检测器阵列，包括设置在半导体材料中的可见光光电检测器，用于检测入射在半导体材料上的光中包括的可见光。 该装置还包括第二光电检测器阵列，包括设置在半导体材料中的飞行时间（“TOF”）光电检测器，以从入射在半导体材料上的光所包含的物体反射的反射光中捕获TOF数据。 从物体反射的反射光通过可见光光电检测器的光路和半导体材料的厚度被引导到TOF光电检测器。 第一光电检测器阵列的可见光光电检测器沿着物体和第二光电检测器阵列的TOF光电检测器之间的光路布置在半导体材料中。