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    METHOD AND APPARATUS FOR PERFORMING HYDROGEN OPTICAL EMISSION ENDPOINT DETECTION FOR PHOTORESIST STRIP AND RESIDUE REMOVAL
    1.
    发明申请
    METHOD AND APPARATUS FOR PERFORMING HYDROGEN OPTICAL EMISSION ENDPOINT DETECTION FOR PHOTORESIST STRIP AND RESIDUE REMOVAL 失效
    用于执行光电子条纹和残留物去除的氢光学发射端点检测的方法和装置

    公开(公告)号：US20060289384A1

    公开(公告)日：2006-12-28

    申请号：US11467842

    申请日：2006-08-28

    申请人： Elizabeth Pavel ,  Mark Kawaguchi ,  James Papanu

    发明人： Elizabeth Pavel ,  Mark Kawaguchi ,  James Papanu

    IPC分类号： G01L21/30 ,  C23F1/00 ,  H01L21/302

    CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J2237/3342

    摘要： Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.

    摘要翻译： 本文提供了在执行光致抗蚀剂剥离和从衬底或衬底上的膜堆叠移除残余物时监测和检测光发射的方法。 在一个实施例中，提供了一种方法，其包括将包括光致抗蚀剂层的基板定位到处理室中; 使用多步骤等离子体处理来处理光致抗蚀剂层; 以及在所述多级等离子体处理期间监测所述等离子体的氢光发射; 其中所述多步骤等离子体处理包括使用块移除步骤去除大部分光致抗蚀剂层; 并且响应于所监视的氢光发射而切换到过蚀刻步骤。

    Temperature control of a substrate during wet processes
    3.
    发明申请
    Temperature control of a substrate during wet processes 审中-公开
    湿法加工过程中基材的温度控制

    公开(公告)号：US20080041427A1

    公开(公告)日：2008-02-21

    申请号：US11974825

    申请日：2007-10-15

    申请人： Brian Brown ,  Dennis Yost ,  James Papanu ,  Jianshe Tang ,  Alexander Ko

    发明人： Brian Brown ,  Dennis Yost ,  James Papanu ,  Jianshe Tang ,  Alexander Ko

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67248 ,  H01L21/67109

    摘要： Embodiments of the invention provide methods of applying a liquid to a backside of a substrate to bring the substrate to the temperature of the liquid. By controlling the temperature of the substrate the temperature of the semiconductor processing liquid may be maintained at a particular temperature or a type of reaction occurring in the semiconductor processing liquid may be enhanced or maintained, such as in reactions where relatively small amounts of liquid are used or expensive chemicals are used.

    摘要翻译： 本发明的实施例提供了将液体施加到基底的背面以使基底达到液体温度的方法。 通过控制衬底的温度，可以将半导体处理液的温度保持在特定温度，或者可以增强或维持在半导体处理液中发生的反应类型，例如在使用相对少量液体的反应中 或使用昂贵的化学品。

    Hybrid dicing process using a blade and laser
    4.
    发明授权
    Hybrid dicing process using a blade and laser 有权
    使用刀片和激光的混合切割工艺

    公开(公告)号：US09130057B1

    公开(公告)日：2015-09-08

    申请号：US14320405

    申请日：2014-06-30

    申请人： Prabhat Kumar ,  Wei-Sheng Lei ,  James Papanu ,  Brad Eaton ,  Ajay Kumar

    发明人： Prabhat Kumar ,  Wei-Sheng Lei ,  James Papanu ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/822 ,  H01L21/67 ,  B23K26/00 ,  B26D9/00

    CPC分类号： B26D9/00 ,  B23K26/0624 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B23K2103/54 ,  B26D3/06 ,  B28D5/022 ,  H01L21/67092 ,  H01L21/78

    摘要： A method and system of hybrid dicing using a blade and laser are described. In one embodiment, a method involves focusing a laser beam inside the substrate in regions between the integrated circuits, inducing defects inside the substrate in the regions. The method also involves forming a groove on a surface of the substrate with a blade saw in the regions. The method further involves singulating the integrated circuits at the regions with the induced defects and the groove. In one embodiment, a system includes a laser module configured to focus a laser beam inside the substrate in regions between the integrated circuits, inducing defects inside the substrate in the regions. A blade grooving module is configured to form a groove in a surface of the substrate with a blade saw in the regions.

    摘要翻译： 描述了使用刀片和激光器的混合切割的方法和系统。 在一个实施例中，一种方法包括将集成电路之间的区域内的激光束聚焦在衬底内，从而在区域内的衬底内引起缺陷。 该方法还涉及在该区域中具有刀片锯的基板的表面上形成凹槽。 该方法还涉及在具有感应缺陷和凹槽的区域处分离集成电路。 在一个实施例中，系统包括激光模块，该激光模块被配置为将集成电路之间的区域内的激光束聚焦在衬底内，从而在该区域内的衬底内引起缺陷。 刀片切槽模块被配置为在所述区域中具有刀片锯的基板的表面中形成凹槽。

    Apparatus and methods for mask cleaning
    6.
    发明申请
    Apparatus and methods for mask cleaning 审中-公开
    用于面罩清洁的装置和方法

    公开(公告)号：US20070068558A1

    公开(公告)日：2007-03-29

    申请号：US11514663

    申请日：2006-09-01

    申请人： James Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

    发明人： James Papanu ,  Roman Gouk ,  Han-Wen Chen ,  Phillip Peters

    IPC分类号： G03F1/00 ,  B08B3/00

    CPC分类号： G03F1/82 ,  H01L21/67051

    摘要： An integrated substrate cleaning processes capable of removing residues and particulates from the surface of a photomask is described. In one embodiment, an ozonated de-ionized water treatment is the first wet cleaning operation. In an embodiment of the present invention, the substrate cleaning process includes a wet cleaning operation employing an ammonium hydroxide-based chemical cleaning solution diluted with hydrogenated de-ionized water. In another embodiment of the present invention, the substrate cleaning process uses a plasma treatment prior to the first wet cleaning operation.

    摘要翻译： 描述了能够从光掩模的表面去除残留物和微粒的集成基板清洗方法。 在一个实施方案中，臭氧化去离子水处理是第一次湿式清洗操作。 在本发明的一个实施例中，基板清洗工艺包括使用氢化去离子水稀释的基于氢氧化铵的化学清洗溶液的湿式清洗操作。 在本发明的另一个实施方案中，基材清洗工艺在第一次湿式清洗操作之前使用等离子体处理。

    Post-ion implant cleaning for silicon on insulator substrate preparation
    7.
    发明申请
    Post-ion implant cleaning for silicon on insulator substrate preparation 失效
    用于硅绝缘体衬底制备的离子后植入物清洁

    公开(公告)号：US20060286783A1

    公开(公告)日：2006-12-21

    申请号：US11154211

    申请日：2005-06-15

    申请人： James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

    发明人： James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

    IPC分类号： H01L21/04 ,  H01L21/302

    CPC分类号： H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

    摘要： A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

    摘要翻译： 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

    Temperature control of a substrate during wet processes
    8.
    发明申请
    Temperature control of a substrate during wet processes 审中-公开
    湿法加工过程中基材的温度控制

    公开(公告)号：US20060254616A1

    公开(公告)日：2006-11-16

    申请号：US11126417

    申请日：2005-05-11

    申请人： Brian Brown ,  Dennis Yost ,  James Papanu ,  Jianshe Tang ,  Alexander Ko

    发明人： Brian Brown ,  Dennis Yost ,  James Papanu ,  Jianshe Tang ,  Alexander Ko

    IPC分类号： C23G1/00 ,  B08B3/00

    CPC分类号： H01L21/67248 ,  H01L21/67109

    摘要： Embodiments of the invention provide methods of applying a liquid to a backside of a substrate to bring the substrate to the temperature of the liquid. By controlling the temperature of the substrate the temperature of the semiconductor processing liquid may be maintained at a particular temperature or a type of reaction occurring in the semiconductor processing liquid may be enhanced or maintained, such as in reactions where relatively small amounts of liquid are used or expensive chemicals are used.

    摘要翻译： 本发明的实施例提供了将液体施加到基底的背面以使基底达到液体温度的方法。 通过控制衬底的温度，可以将半导体处理液的温度保持在特定温度，或者可以增强或维持在半导体处理液中发生的反应类型，例如在使用相对少量液体的反应中 或使用昂贵的化学品。

    Post-ion implant cleaning on silicon on insulator substrate preparation
    9.
    发明申请
    Post-ion implant cleaning on silicon on insulator substrate preparation 失效
    离子植入物清洁对硅绝缘体衬底制备

    公开(公告)号：US20080081485A1

    公开(公告)日：2008-04-03

    申请号：US11977701

    申请日：2007-10-24

    申请人： James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

    发明人： James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

    IPC分类号： H01L21/461

    CPC分类号： H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

    摘要： A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

    摘要翻译： 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

    RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
    10.
    发明授权
    RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers 失效
    RF等离子体反应器，其具有用于在半导体晶片的处理期间进行清洁的清洁电极

    公开(公告)号：US5817534A

    公开(公告)日：1998-10-06

    申请号：US567376

    申请日：1995-12-04

    申请人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Donald Olgado ,  James Papanu ,  Steven S.Y. Mak

    发明人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Donald Olgado ,  James Papanu ,  Steven S.Y. Mak

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05H1/00

    CPC分类号： H01L21/67028 ,  H01J37/32862 ,  Y10S438/905

    摘要： The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.

    摘要翻译： 本发明在用于处理半导体晶片的等离子体反应器中进行，等离子体反应器具有用于容纳处理气体的室，并具有连接到RF电源的导体，用于将RF功率耦合到反应器室中以从处理气体产生 腔室内的等离子体，该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染，本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行 在一个表面上去除在晶片加工期间沉积的污染物。 通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。 耦合可以通过与一个表面相邻的电容清洁电极，电容清洁电极连接到RF电源来进行。 电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧，以便被保护而不与等离子体接触。 或者，耦合可以通过从RF电源到一个表面的直接电连接来执行。