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公开(公告)号：US07846347B2
公开(公告)日：2010-12-07
申请号：US11779972
申请日：2007-07-19
IPC分类号： C03C15/00
CPC分类号： H01L21/02071 , H01L21/31116
摘要： The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
摘要翻译： 本发明提供了一种用于从基材中除去含卤素残余物的方法和集成系统，包括蚀刻基板，加热基板并将加热的基板暴露于去除含卤素残余物的等离子体。
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公开(公告)号：US06991739B2
公开(公告)日：2006-01-31
申请号：US09978121
申请日：2001-10-15
IPC分类号： H01L21/00
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas and a minority component of between 0.1% and 10% by volume of an oxidizing process gas. Reactive gas species are thereby generated. A photoresist layer with an exposed dielectric layer on the substrate in the chamber is then exposed to the reactive gas mixture to selectively remove the photoresist layer from the dielectric layer.
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3.发明授权Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal 失效用于进行光致抗蚀剂剥离和残留物去除的氢光发射端点检测的方法和装置公开(公告)号：US07648916B2
公开(公告)日：2010-01-19
申请号：US11467842
申请日：2006-08-28
IPC分类号： H01L21/302
CPC分类号： H01J37/32963 , H01J37/32935 , H01J2237/3342
摘要： Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.
摘要翻译： 本文提供了在执行光致抗蚀剂剥离和从衬底或衬底上的膜堆叠移除残余物时监测和检测光发射的方法。 在一个实施例中，提供了一种方法，其包括将包括光致抗蚀剂层的基板定位到处理室中; 使用多步骤等离子体处理来处理光致抗蚀剂层; 以及在所述多级等离子体处理期间监测所述等离子体的氢光发射; 其中所述多步骤等离子体处理包括使用块移除步骤去除大部分光致抗蚀剂层; 并且响应于所监视的氢光发射而切换到过蚀刻步骤。
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公开(公告)号：US07604708B2
公开(公告)日：2009-10-20
申请号：US10778898
申请日：2004-02-12
申请人： Bingxi Sun Wood , Mark N. Kawaguchi , James S. Papanu , Roderick C. Mosely , Chiukun Steven Lai , Chien-Teh Kao , Hua Ai , Wei W. Wang
发明人： Bingxi Sun Wood , Mark N. Kawaguchi , James S. Papanu , Roderick C. Mosely , Chiukun Steven Lai , Chien-Teh Kao , Hua Ai , Wei W. Wang
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , C23C14/022 , H01J37/32357 , H01J37/3244 , H01J37/32871 , H01J37/34 , H01L21/02046 , H01L21/02063 , H01L21/31116 , H01L21/32136 , H01L21/67028 , H01L21/76814 , H01L21/76838
摘要： A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.
摘要翻译： 基板清洁装置具有远程源以远程激励含氢气体以形成具有离子含氢物质与自由基含氢物质的第一比例的通电气体。 该设备具有带有基板支撑件的处理室，用于过滤远程激励的气体以形成具有离子含氢物质与含氢的物质的第二比例的过滤的通电气体的离子过滤器，第二比例不同于 第一比例和气体分配器，以将过滤的通电气体引入室中。
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公开(公告)号：US07374696B2
公开(公告)日：2008-05-20
申请号：US10777026
申请日：2004-02-11
IPC分类号： B44C1/22
CPC分类号： H01L21/02071 , H01L21/31116
摘要： The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
摘要翻译： 本发明提供了一种用于从基材中除去含卤素残余物的方法和集成系统，包括蚀刻基板，加热基板并将加热的基板暴露于去除含卤素残余物的等离子体。
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