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12 条记录 (耗时 0.018 秒)

    Method of producing thin, poorly soluble coatings
    1.
    发明授权
    Method of producing thin, poorly soluble coatings 失效
    生产薄，难溶性涂层的方法

    公开(公告)号：US08158204B1

    公开(公告)日：2012-04-17

    申请号：US09958443

    申请日：2000-04-06

    申请人： Christian-Herbert Fischer ,  Martha Christina Lux-Steiner ,  Hans-Juergen Baecker

    发明人： Christian-Herbert Fischer ,  Martha Christina Lux-Steiner ,  Hans-Juergen Baecker

    IPC分类号： B05D3/02 ,  B05D3/04 ,  C23C16/00

    CPC分类号： C23C8/10 ,  C23C26/00 ,  Y10S501/906

    摘要： For making ceramic or oxidic layers (CL/OL) on substrates (S), the method according to the invention therefore provides that following application (I) and drying (II) of a suitable precursor (P) the formed precursor layer (PLD) is gassed (III) with a moist reactant gas (RG) for conversion into a corresponding hydroxide or complex layer (HL) and then thermally treated (IV) for forming a ceramic or oxidic layer (CL/OL). For the alternative production of other chalcogenidic layers of increased material conversion additional gassing is carried out with a reactant gas containing chalcogen hydrogen. Metallic layers may alternatively be made by use of a reducing reactant gas. The methods in accordance with the invention may be used wherever surfaces, even those of shaded structures, must be protected or modified or provided with functional layers, particularly in solar and materials technology.

    摘要翻译： 因此，为了在基材（S）上制造陶瓷或氧化层（CL / OL），根据本发明的方法因此提供了合适的前体（P）的应用（I）和干燥（II），所形成的前体层（PLD） （III）用湿的反应物气体（RG）转化成相应的氢氧化物或复合层（HL），然后热处理（IV）以形成陶瓷或氧化层（CL / OL）。 为了替代生产具有增加的材料转化率的其它硫属化物层，用含有硫属氢的反应气体进行附加的放气。 可以通过使用还原反应气体来制备金属层。 根据本发明的方法可以用于任何表面，即使是阴影结构的表面必须被保护或改性或提供功能层的地方，特别是在太阳能和材料技术中。

    METHOD AND ARRANGEMENT FOR PRODUCING AN N-SEMICONDUCTIVE INDIUM SULFIDE THIN LAYER
    5.
    发明申请
    METHOD AND ARRANGEMENT FOR PRODUCING AN N-SEMICONDUCTIVE INDIUM SULFIDE THIN LAYER 失效
    用于生产N-半导体硫化物薄层的方法和装置

    公开(公告)号：US20110081734A1

    公开(公告)日：2011-04-07

    申请号：US12934329

    申请日：2009-03-14

    申请人： Nicholas Allsop ,  Christian-Herbert Fischer ,  Sophie Gledhill ,  Martha Christina Lux-Steiner

    发明人： Nicholas Allsop ,  Christian-Herbert Fischer ,  Sophie Gledhill ,  Martha Christina Lux-Steiner

    IPC分类号： H01L21/20 ,  C23C16/14 ,  H01L21/66

    CPC分类号： C23C16/305 ,  C23C16/45527

    摘要： A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film of a desired thickness. The first method phase includes converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100° C. to 275° C., directing the indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume. The indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z≠0. The second step includes setting a temperature of the substrate in a range of 18° C. and 450° C. and directing hydrogen sulfide onto the substrate in an absolute concentration up to 100%.

    摘要翻译： 在大气压下使用含铟前体，硫化氢作为反应性气态前体和惰性载气流在基板上制造n型半导体硫化铟薄膜的方法包括循环重复第一和第二步骤， 以产生所需厚度的硫化铟薄膜。 第一种方法阶段包括将含铟前体转化为溶解气相和气相中的至少一种，将基底加热至100℃至275℃的温度，将含铟前体引导到 底物并在混合区中向含铟前体提供硫化氢，其量使得硫化氢的绝对浓度大于零且不大于1体积％。 设定含铟前体的铟浓度，以便产生紧密的In（OH x，Xy，Sz）3膜，其中X =卤化物，x + y + 2z = 1，z≠0。 第二步包括将基板的温度设定在18℃和450℃的范围内，并以绝对浓度高达100％的方式将硫化氢引导到基板上。

    Method and arrangement for producing an N-semiconductive indium sulfide thin layer
    8.
    发明授权
    Method and arrangement for producing an N-semiconductive indium sulfide thin layer 失效
    用于生产N-半导体硫化铟薄层的方法和装置

    公开(公告)号：US08143145B2

    公开(公告)日：2012-03-27

    申请号：US12934329

    申请日：2009-03-14

    申请人： Nicholas Allsop ,  Christian-Herbert Fischer ,  Sophie Gledhill ,  Martha Christina Lux-Steiner

    发明人： Nicholas Allsop ,  Christian-Herbert Fischer ,  Sophie Gledhill ,  Martha Christina Lux-Steiner

    IPC分类号： H01L21/36 ,  H01L21/20 ,  H01L21/76 ,  H01L21/469

    CPC分类号： C23C16/305 ,  C23C16/45527

    摘要： A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film of a desired thickness. The first method phase includes converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100° C. to 275° C., directing the indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume. The indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z≠0. The second step includes setting a temperature of the substrate in a range of 18° C. and 450° C. and directing hydrogen sulfide onto the substrate in an absolute concentration up to 100%.

    摘要翻译： 在大气压下使用含铟前体，硫化氢作为反应性气态前体和惰性载气流在基板上制造n型半导体硫化铟薄膜的方法包括循环重复第一和第二步骤 以产生所需厚度的硫化铟薄膜。 第一种方法阶段包括将含铟前体转化为溶解气相和气相中的至少一种，将基底加热至100℃至275℃的温度，将含铟前体引导到 底物并在混合区中向含铟前体提供硫化氢，其量使得硫化氢的绝对浓度大于零且不大于1体积％。 设定含铟前体的铟浓度，以便产生紧密的In（OH x，Xy，Sz）3膜，其中X =卤化物，x + y + 2z = 1，z≠0。 第二步包括将基板的温度设定在18℃和450℃的范围内，并以绝对浓度高达100％的方式将硫化氢引导到基板上。

    ELECTRODEPOSITION METHOD FOR THE PRODUCTION OF NANOSTRUCTURED ZNO
    9.
    发明申请
    ELECTRODEPOSITION METHOD FOR THE PRODUCTION OF NANOSTRUCTURED ZNO 审中-公开
    用于生产纳米结构的ZNO的电沉积方法

    公开(公告)号：US20110048956A1

    公开(公告)日：2011-03-03

    申请号：US12918747

    申请日：2009-02-20

    申请人： Jie Chen ,  Lorenz Ae ,  Christian-Herbert Fischer ,  Martha Christina Lux-Steiner

    发明人： Jie Chen ,  Lorenz Ae ,  Christian-Herbert Fischer ,  Martha Christina Lux-Steiner

    IPC分类号： C25D7/12 ,  C25D5/00 ,  B82Y40/00

    CPC分类号： C25D9/08 ,  C25D5/08 ,  C25D5/10 ,  C25D5/56 ,  C25D7/12 ,  C25D9/04

    摘要： The problem addressed by the invention is that of improving on an electrodeposition method for the production of nanostructured ZnO in such a manner that this method enables the production of nanostructured ZnO with a high internal quantum efficiency (IQE) without additional tempering steps. According to the invention, the electrodeposition method use an aqueous solution of a Zn salt, for example Zn(NO3)2, and a doping agent, for example HNO3 or NH4NO3. ZnO nanotubes produced in this way show an intense emission band edge in the UV range and only a weak emission in the range from 450 to 700 nm in the photoluminescence spectrum.

    摘要翻译： 本发明解决的问题在于，提高用于生产纳米结构ZnO的电沉积方法，使得该方法能够生产具有高内部量子效率（IQE）的纳米结构ZnO而无需额外的回火步骤。 根据本发明，电沉积方法使用Zn盐的水溶液，例如Zn（NO 3）2和掺杂剂，例如HNO 3或NH 4 NO 3。 以这种方式制造的ZnO纳米管在UV范围内表现出强烈的发射带边缘，在光致发光光谱中仅显示450〜700nm的弱发射。