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    Semiconductor device
    1.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20050212148A1

    公开(公告)日：2005-09-29

    申请号：US10911509

    申请日：2004-08-05

    申请人： Kenji Otani ,  Masahiro Tsuji

    发明人： Kenji Otani ,  Masahiro Tsuji

    IPC分类号： H01L23/36 ,  H01L23/28 ,  H01L23/31 ,  H01L23/367 ,  H01L23/433 ,  H01L23/50

    CPC分类号： H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49517 ,  H01L23/5286 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/4554

    摘要： In order to minimize a distance from a power supply line and/or a ground line of a semiconductor integrated circuit of a semiconductor device to electrodes of a printed board, at least either a power supply electrode or the ground line of the semiconductor integrated circuit is connected to a metal film through openings provided in a protective film over the power supply electrode. The metal film is exposed on a side of the semiconductor device, adjacent to a printed board on which the semiconductor device is mounted, or on a side thereof, opposite from the printed board, and the metal film is connected a power supply electrode and/or a ground electrode of the printed board through the exposed surface of the metal film. Alternatively, upper and lower metal films connected to each other, with a stress relief film interposed therebetween, may be disposed in place of the metal film, or a metal sheet may be disposed over the metal film. Further, in order to minimize the length of a heat radiation path of the semiconductor integrated circuit of the semiconductor device, the protective film is deposited on the semiconductor integrated circuit, and the metal film is exposed on the side of the semiconductor device, adjacent to the printed board on which the semiconductor device is mounted, or on the side thereof, opposite from the printed board, thereby effecting heat radiation. Alternatively, the upper and lower metal films connected to each other, with the stress relief film interposed therebetween, may be disposed in place of the metal film, or a metal sheet functioning as a heat sink is disposed over the metal film.

    摘要翻译： 为了最小化从半导体器件的半导体集成电路的电源线和/或接地线到印刷电路板的电极的距离，至少半导体集成电路的电源电极或接地线是 通过设置在电源电极上的保护膜中的开口连接到金属膜。 金属膜暴露在与半导体器件安装的印刷电路板相邻的半导体器件的一侧上，或者与印刷电路板相对的侧面上，金属膜与电源电极和/ 或印刷电路板的接地电极通过金属膜的暴露表面。 或者，可以设置彼此连接的上部和下部金属膜，其间插入有应力消除膜，以代替金属膜，或者可以在金属膜上设置金属片。 此外，为了使半导体器件的半导体集成电路的散热路径的长度最小化，保护膜沉积在半导体集成电路上，并且金属膜在半导体器件的侧面露出，邻近 安装有半导体器件的印刷电路板或其一侧与印刷电路板相对，从而实现热辐射。 或者，可以设置彼此连接的上部和下部金属膜，其间设置有应力消除膜，以代替金属膜，或者在金属膜上设置用作散热器的金属片。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20070063334A1

    公开(公告)日：2007-03-22

    申请号：US11469225

    申请日：2006-08-31

    申请人： Kenji Otani ,  Masahiro Tsuji

    发明人： Kenji Otani ,  Masahiro Tsuji

    IPC分类号： H01L23/48

    CPC分类号： H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49517 ,  H01L23/5286 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/4554

    摘要： In order to minimize a distance from a power supply line and/or a ground line of a semiconductor integrated circuit of a semiconductor device to electrodes of a printed board, at least either a power supply electrode or the ground line of the semiconductor integrated circuit is connected to a metal film through openings provided in a protective film over the power supply electrode. The metal film is exposed on a side of the semiconductor device, adjacent to a printed board on which the semiconductor device is mounted, or on a side thereof, opposite from the printed board, and the metal film is connected a power supply electrode and/or a ground electrode of the printed board through the exposed surface of the metal film. Alternatively, upper and lower metal films connected to each other, with a stress relief film interposed therebetween, may be disposed in place of the metal film, or a metal sheet may be disposed over the metal film. Further, in order to minimize the length of a heat radiation path of the semiconductor integrated circuit of the semiconductor device, the protective film is deposited on the semiconductor integrated circuit, and the metal film is exposed on the side of the semiconductor device, adjacent to the printed board on which the semiconductor device is mounted, or on the side thereof, opposite from the printed board, thereby effecting heat radiation. Alternatively, the upper and lower metal films connected to each other, with the stress relief film interposed therebetween, may be disposed in place of the metal film, or a metal sheet functioning as a heat sink is disposed over the metal film.

    摘要翻译： 为了最小化从半导体器件的半导体集成电路的电源线和/或接地线到印刷电路板的电极的距离，至少半导体集成电路的电源电极或接地线是 通过设置在电源电极上的保护膜中的开口连接到金属膜。 金属膜暴露在与半导体器件安装的印刷电路板相邻的半导体器件的一侧上，或者与印刷电路板相对的侧面上，金属膜与电源电极和/ 或印刷电路板的接地电极通过金属膜的暴露表面。 或者，可以设置彼此连接的上部和下部金属膜，其间插入有应力消除膜，以代替金属膜，或者可以在金属膜上设置金属片。 此外，为了使半导体器件的半导体集成电路的散热路径的长度最小化，保护膜沉积在半导体集成电路上，并且金属膜在半导体器件的侧面露出，邻近 安装有半导体器件的印刷电路板或其一侧与印刷电路板相对，从而实现热辐射。 或者，可以设置彼此连接的上部和下部金属膜，其间设置有应力消除膜，以代替金属膜，或者在金属膜上设置用作散热器的金属片。

    Optically active bicyclo[3.3.0]octane and processes for the preparation thereof
    3.
    发明授权
    Optically active bicyclo[3.3.0]octane and processes for the preparation thereof 失效
    光学活性双环[3.3.0]辛烷及其制备方法

    公开(公告)号：US4871869A

    公开(公告)日：1989-10-03

    申请号：US293414

    申请日：1989-01-04

    申请人： Kenji Mori ,  Masahiro Tsuji

    发明人： Kenji Mori ,  Masahiro Tsuji

    IPC分类号： C07C405/00 ,  C07D317/72 ,  C07F7/18

    CPC分类号： C07D317/72 ,  C07C405/0083 ,  C07F7/1856 ,  Y02P20/582

    摘要： New intermediate, an optically active (1R,5S,6S,7R)-6-tert-butyldiphenylsilyloxmethyl-7-hydroxy-bicyclo[3.3.0]octan-3-one (I) having high optical purity which is useful for the synthesis of an optically active carbacyclin and an optically active pentalenolactone E methyl ester. The compound (I) is also an intermediate compound serving for the purpose of improving the optical purity of (1R,5S,6S,7R)-3,3-ethylenedioxy-6-hydroxymethyl-7-(2'-tetrahydropyranyloxy)bicyclo[3.3.0]octane. The compound (I) is prepared by reacting (1R,5S,6S,7R)-3,3-ethylenedioxy-6-hydroxymethyl-7-(2'-tetrahydropyranyloxy)bicyclo[3.3.0]octane with tert-butylchlorodiphenylsilane in the presence of a base and removing the ethylenedioxy and tetrahydropyranyl groups of the resultant compound under an acid condition.

    High-strength, high-conductivity copper alloy
    4.
    发明授权
    High-strength, high-conductivity copper alloy 失效
    高强度，高导电性铜合金

    公开(公告)号：US4666667A

    公开(公告)日：1987-05-19

    申请号：US844237

    申请日：1986-03-25

    申请人： Morinori Kamio ,  Masahiro Tsuji ,  Hirohito Miyashita

    发明人： Morinori Kamio ,  Masahiro Tsuji ,  Hirohito Miyashita

    IPC分类号： C22C9/00 ,  C22C9/02 ,  H01B1/02

    CPC分类号： C22C9/02 ,  C22F1/08

    摘要： A high-strength, high-conductivity copper alloy comprises, all by weight, from 0.8 to 4.0% of Sn, from more than 0.01 to 0.4% of P, from 0.05 to 1.0% of Ni, from 0.05 to 1.0% of one, two or more elements selected from Al, Hf, Be, Mo, Zn, Te, Pb, Co, Zr, and Nb, and the remainder of Cu and inevitable impurities. The impurities include not more than 0.0020% of oxygen.

    摘要翻译： 高强度，高导电性铜合金全部重量含有Sn：0.8〜4.0％，P：0.01〜0.4％，Ni：0.05〜1.0％，0.05〜1.0％ 选自Al，Hf，Be，Mo，Zn，Te，Pb，Co，Zr和Nb中的两种或更多种元素，其余的Cu和不可避免的杂质。 杂质含有不大于0.0020％的氧气。

    High-strength-conductivity copper alloy
    6.
    发明授权
    High-strength-conductivity copper alloy 失效
    高强度导电铜合金

    公开(公告)号：US4362579A

    公开(公告)日：1982-12-07

    申请号：US219617

    申请日：1980-12-24

    申请人： Masahiro Tsuji

    发明人： Masahiro Tsuji

    IPC分类号： C22C9/00 ,  C22C9/04 ,  H01B1/02 ,  H01H1/025 ,  C22F1/08

    CPC分类号： C22C9/04 ,  H01H1/025

    摘要： A copper alloy with high strength and excellent electrical conductivity, corrosion resistance, and spring qualities, comprises 0.4-8% nickel, 0.1-3% silicon, 10-35% zinc, concomitant impurities, and the remainder copper, all by weight. It further comprises at least one element as an accessory ingredient or ingredients selected from the group consisting of 0.001-0.1 wt % each of phosphorus and arsenic and 0.01-1 wt % each of titanium, chromium, tin, and magnesium. The accessory ingredient or ingredients combinedly account for 0.001-2% of the total weight of the alloy composition.

    摘要翻译： 具有高强度和优异的导电性，耐腐蚀性和弹簧质量的铜合金包括0.4-8％的镍，0.1-3％的硅，10-35％的锌，伴随的杂质，其余的铜都是重量。 其还包含至少一种元素作为辅助成分或选自由磷和砷各自为0.001-0.1重量％和钛，铬，锡和镁各自为0.01-1重量％的组分组成的组分。 辅助成分或成分合成占合金组合物总重量的0.001-2％。