公开(公告)号：US08049999B2

公开(公告)日：2011-11-01

申请号：US12347543

申请日：2008-12-31

申请人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121

摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

摘要翻译： 提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。 磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属 元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。

公开(公告)号：US07843669B2

公开(公告)日：2010-11-30

申请号：US12366972

申请日：2009-02-06

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US07443004B2

公开(公告)日：2008-10-28

申请号：US11283873

申请日：2005-11-22

申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC分类号： H01L29/82

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。

公开(公告)号：US20080062577A1

公开(公告)日：2008-03-13

申请号：US11930699

申请日：2007-10-31

申请人： Hideaki FUKUZAWA ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki FUKUZAWA ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

公开(公告)号：US20080013218A1

公开(公告)日：2008-01-17

申请号：US11822700

申请日：2007-07-09

申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996 ,  H01L43/08

摘要： A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.

摘要翻译： 一种磁阻效应元件，包括：磁阻效应膜，包括：具有第一铁磁性膜的磁化固定层，其磁化方向实际上在一个方向上固定; 磁化自由层，具有磁化方向相应于外部磁场而变化的第二铁磁性膜; 以及设置在所述磁化固定层和磁化自由层之间并具有贯穿所述绝缘层的绝缘层和强磁性金属部分的间隔层; 一对电极相对于磁阻效应膜的膜表面在垂直方向施加感测电流; 以及包含设置在磁化固定层的内部和磁化自由层的内部中的至少一个的非铁磁性元件的层。

公开(公告)号：US20070159733A1

公开(公告)日：2007-07-12

申请号：US11644904

申请日：2006-12-26

申请人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

发明人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁化固定层，磁化自由层和插入其间的中间层，并且具有磁性区域和电阻高于磁性区域的非磁性区域。 感测电流在大致垂直于其膜平面的方向上传递到磁阻效应膜。 中间层的磁性区域局部地穿透非磁性区域，并且在基本上垂直于膜平面的方向上延伸。 非磁性区域包含具有比包含在磁性区域中的磁性金属元素更大的表面能的非磁性金属元素。

公开(公告)号：US20070081276A1

公开(公告)日：2007-04-12

申请号：US11609557

申请日：2006-12-12

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US07190558B2

公开(公告)日：2007-03-13

申请号：US10178023

申请日：2002-06-24

申请人： Hitoshi Iwasaki ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Masashi Sahashi

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/10

摘要： In a CPP element using a metal intermediate layer excellent in shot noise and response to high frequencies unlike a TMR element, its magnetoresistive effect film includes a magnetic layer mainly made of a half-metal exhibiting ferromagnetism, ferrimagnetism or antiferromagnetism, and largely variable in way of conduction in response to spin direction of electrons.

摘要翻译： 在使用与TMR元件不同的散粒噪声和高频响应的金属中间层的CPP元件中，其磁阻效应膜包括主要由呈现铁磁性，亚铁磁性或反铁磁性的半金属制成的磁性层，并且在很大程度上可变化 的响应于电子的自旋方向的传导。

公开(公告)号：US07116529B2

公开(公告)日：2006-10-03

申请号：US10654988

申请日：2003-09-05

申请人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi

发明人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  G11B5/3954 ,  G11B2005/3996

摘要： A magnetoresistive element has a magnetoresistive film and a pair of electrodes adapted to flow a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetoresistive film includes first and second magnetization free layers and first to fourth magnetization pinned layers with nonmagnetic intermediate layers interposed therebetween. The second magnetization pinned layer and the third magnetization pinned layer are formed between the second nonmagnetic intermediate layer and the third nonmagnetic intermediate layer. The directions of magnetization of the first and second magnetization pinned layers are substantially parallel to each other. The directions of magnetization of the third and fourth magnetization pinned layers are substantially parallel to each other. Further, the direction of magnetization of the second magnetization pinned layer is substantially antiparallel to the direction of magnetization of the third magnetization pinned layer.

摘要翻译： 磁阻元件具有磁阻膜和一对电极，其适于在基本上垂直于磁阻膜的平面的方向上流动感测电流。 磁阻膜包括第一和第二磁化自由层和介于其间的非磁性中间层的第一至第四磁化固定层。 第二磁化被钉扎层和第三磁化被钉扎层形成在第二非磁性中间层和第三非磁性中间层之间。 第一和第二磁化固定层的磁化方向基本上彼此平行。 第三和第四磁化被钉扎层的磁化方向基本上彼此平行。 此外，第二磁化被钉扎层的磁化方向与第三磁化固定层的磁化方向基本上反平行。

公开(公告)号：US07072153B2

公开(公告)日：2006-07-04

申请号：US10400638

申请日：2003-03-28

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.