摘要:
Disclosed is a cleaning method which can remove, particularly, all of an organic contaminant, a particle contaminant, and a metal contaminant adhered to a semiconductor substrate at a high cleaning level, and which can realize the reduction in environmental load caused by the cleaning. The method of cleaning the semiconductor substrate includes a first cleaning process of cleaning the semiconductor substrate with a cleaning composition including a transition-metal-containing water-soluble salt (A), a chelating agent (B1), and a peroxide (C), a ratio of the chelating agent (B1) to the transition-metal-containing water-soluble salt (A) being 0.5 molar equivalent or more; and a second cleaning process of cleaning the semiconductor substrate, which is cleaned through the first cleaning process, with an acidic solution containing a chelating agent (B2).
摘要:
A composition for removing an insulation material and related methods of use are disclosed. The composition comprises about 1 to 50 percent by weight of an oxidizing agent, about 0.1 to 35 percent by weight of a fluorine-containing compound, and water. The insulation material comprises at least one of a low-k material and a protection material.
摘要:
(Object) To provide a new electronic parts cleaning solution that inhibits the corrosion of silicon or metals other than the silicon, and that efficiently cleans off fine dust or organic matters adhered on the surface of electronic parts, and that does not have white turbidity easily.(Solution) An electronic parts clearing solution which is characterized in containing an anionic surfactant, hydroxide, metal corrosion inhibitor, water, and a nonionic surfactant represented by formula (I) and/or a nonionic surfactant represented by formula (II): HO-((EO)x—(PO)y)z—H (I) R-[((EO)a—(PO)b)c—H]m (II) (EO is an oxyethylene group, and PO is an oxypropylene group. x and y, and a and b are positive number, which x(x+y) and a(a+b) are 0.05 to 0.5 respectively, and z and c are positive integers. R is a residue group wherein hydrogen atoms are removed from hydroxyl group of alcohol or amine represented by a group having valency of 1˜4).
摘要:
Recently, use is made of copper wiring as the wiring material for semiconductor devices, and of low dielectric constant films as the insulating film between the lines of wiring. In this connection, a photoresist stripper is in need which can inhibit corrosion or damage on the copper wiring or the Low-k film, and which has excellent property of removing ashed photoresist residues. The invention provides a photoresist stripper (hereinafter, referred to as the stripper of the invention) characterized in containing a tertiary amine compound, an alkaline compound, a fluoro compound, and an anionic surfactant; and a process for preparation of semiconductor devices using the stripper of the invention.
摘要:
According to the present invention, there is provided an anticorrosive treating concentrate usable for an exposed surface of a metal (e.g. copper or a copper alloy), containing an anticorrosive agent and a precipitation inhibitor and having a pH of 4 to 12 when used in the form of an aqueous solution, in which concentrate the anticorrosive agent is a triazole type compound and/or a derivative thereof and is contained in a concentration of 0.05 to 20% by weight and the precipitation inhibitor is a compound having at least one nitrogen atom but no metal atom in the molecule.
摘要:
An electrode having a thermoplastic resin having gas permiability and a metal (3b) supported in a three-dimensional matrix form; an electrolyte composite having an electrolyte membrane (1) and a pair of electrodes (3), the electrodes (3) comprising a porous thermoplastic resin having gas permiability and a metal (3b) supported in a three-dimensional matrix form; a method of manufacturing an electrode (3) comprising plating a metal coating on surfaces of numerous particles (3a) of a thermoplastic resin, and pressurizing the particles; and a method of manufacturing an electrolyte composite having an electrolyte membrane (1), and a pair of electrodes (3), comprising manufacturing the electrodes (3) by plating a metal coating on surfaces of numerous particles (3a) of a thermoplastic resin and pressurizing the particles, and joining the electrolyte membrane (1) through the catalyst to one surface of each electrode and joining the electrolyte membranes, or joining the electrodes (3) through the catalysts (2) to opposite surfaces of the electrolyte membrane (1).
摘要:
(Problem) Recently, use is made of copper wiring as the wiring material for semiconductor devices, and of low dielectric constant films as the insulating film between the lines of wiring. In this connection, a photoresist stripper is in need which can inhibit corrosion or damage on the copper wiring or the Low-k film, and which has excellent property of removing ashed photoresist residues. (Solution) The invention provides a photoresist stripper (hereinafter, referred to as the stripper of the invention) characterized in containing a tertiary amine compound, an alkaline compound, a fluoro compound and an anionic surfactant; and a process for preparation of semiconductor devices using the stripper of the invention.
摘要:
A hydrogen storage material is disclosed with no collapse due to pulverization of hydrogen storage alloy particles by repeated hydrogen absorption and desorption thereby permitting repeated use while manifesting excellent electric and thermal conductivities. Pressure molding of hydrogen storage alloy particles, each being covered with a plated metal film having microgranules of a thermoplastic resin, at a temperature higher than a glass transition temperature or a melting point of and below a thermal decomposition temperature of the thermoplastic resin can produce a porous hydrogen storage material of hydrogen storage alloy particles being bonded to each other via the thermoplastic resin. The hydrogen storage material can become firm and strong because the plated metal films covering the hydrogen storage alloy particles are clasped with each other complexly.
摘要:
Disclosed is an artificial tooth that is structured such that the tooth is firmly held in its proper position in a core until a plate resin is fully polymerized and cured in succession to the manufacture of a wax denture. To this end, the artificial tooth has on its portion to be embedded into the core a projection for a temporary bond with the core. Also disclosed is a manufacturing method of an acrylic resin denture comprising the steps of forming a projection for a temporary bond with a core, on the portion of a finished artificial tooth to be -embedded into a core material before the finished artificial tooth is embedded into the core by applying a drop of resin that is of the same type as the material of the artificial tooth, and the step of removing the core along with the projection after a plate resin is polymerized. Instead of the application of a resin drop, a resin pellet can be glued on the portion of the finished artificial tooth to be embedded into a core material before the finished artificial tooth is embedded into the core.
摘要:
A composition for removing an insulation material and related methods of use are disclosed. The composition comprises about 1 to 50 percent by weight of an oxidizing agent, about 0.1 to 35 percent by weight of a fluorine-containing compound, and water. The insulation material comprises at least one of a low-k material and a protection material.