公开(公告)号：US4908694A

公开(公告)日：1990-03-13

申请号：US571542

申请日：1983-12-20

申请人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

发明人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/12 ,  H01L23/498 ,  H01L23/66 ,  H01P3/08

CPC分类号： H01L23/66 ,  H01L23/49844 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/15173 ,  H01L2924/3011

摘要： A semiconductor device including a metal base, a metal case and a through-passage connecting the inside and outside of the metal case, an electric terminal which provides a bridge selectively deposited on an insulator base allowing formation of conductive layer thereon. The insulator base and the conductive layer are integrated with the insulator base and the combination is insertingly engaged with the through-passage of the metal base. A semiconductor element is fixed in the metal case, in which a pseudo-coaxial line structure is formed by the conductive layer, the insulator base, the insulator bridge and the metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.

摘要翻译： PCT No.PCT / JP83 / 00129 Sec。 371日期：1983年12月20日 102（e）1983年12月20日日期PCT提交1983年4月26日PCT公布。 出版物WO83 / 0392200 日期：1983年11月10日。一种半导体器件，包括金属基底，金属壳体和连接金属壳体的内部和外部的通路，提供选择性地沉积在绝缘体基底上的电桥的电端子，允许形成导电 层上。 绝缘子基体和导电层与绝缘体基体一体化，并且组合物与金属基底的通道插入接合。 半导体元件固定在金属壳体中，其中通过导电层，绝缘体基底，绝缘体桥和金属壳形成伪同轴线结构。 因此，本发明的装置即使在10GHz以上的频率也能够稳定地进行动作。

公开(公告)号：US4751482A

公开(公告)日：1988-06-14

申请号：US920938

申请日：1986-10-20

申请人： Masumi Fukuta ,  Hisatoshi Narita

发明人： Masumi Fukuta ,  Hisatoshi Narita

IPC分类号： H01L21/60 ,  H01L23/498 ,  H01L23/66 ,  H05K5/06 ,  H05K1/11

CPC分类号： H01L24/50 ,  H01L23/498 ,  H01L23/66 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15312 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025

摘要： This invention relates to an ultra high speed semiconductor integrated circuit device, and in particular to a layout and connecting structure between lead terminals of a package and signal pads on a chip. The device includes a wiring board, positioned above the chip, which comprises an internal transmission line having a predetermined characteristic impedance on a dielectric insulating plate. The internal transmission line forms a strip line or coplanar transmission line including a signal line an ground conductor film. The wiring board internconnects the outer lead and bonding pads on the chip. The wiring between the internal transmission lines can cross by using a multi-layered structure. As the result of the structure of the present invention, transmission loss is reduced, and it is possible to design the wiring board having an optimum performance for ultra high speed operation of the high density integrated circuit device.

摘要翻译： 本发明涉及一种超高速半导体集成电路器件，特别涉及封装的引线端子与芯片上的信号焊盘之间的布局和连接结构。 该装置包括位于芯片上方的布线板，其包括在介电绝缘板上具有预定特性阻抗的内部传输线。 内部传输线形成包括接地导体膜的信号线的带状线或共面传输线。 接线板将芯片上的外部引线和接合垫互连。 内部传输线之间的布线可以通过使用多层结构而交叉。 作为本发明的结构的结果，传输损耗减少，并且可以设计具有用于高密度集成电路器件的超高速操作的最佳性能的布线板。

公开(公告)号：US4015278A

公开(公告)日：1977-03-29

申请号：US686250

申请日：1976-05-13

申请人： Masumi Fukuta

发明人： Masumi Fukuta

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/812 ,  H01L29/80 ,  H01L27/02 ,  H01L27/10

CPC分类号： H01L29/8122 ,  H01L29/0692 ,  H01L29/41758 ,  H01L29/42316

摘要： A high power field effect semiconductor device in which the gate length per given area of a semiconductor substrate is great and a channel is formed to extend from the main surface of the semiconductor substrate toward the other main surface to make current density as uniform as possible to thereby provide a high output power and which has a construction to allow ease in the attachment of electrodes.

摘要翻译： 一种高功率场效应半导体器件，其中半导体衬底的给定面积的栅极长度大，并且形成从半导体衬底的主表面朝向另一个主表面延伸的沟道，以使电流密度尽可能均匀， 从而提供高输出功率并且具有允许电极附接容易的结构。

公开(公告)号：US5023703A

公开(公告)日：1991-06-11

申请号：US448858

申请日：1989-12-12

申请人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

发明人： Norio Hidaka ,  Shigeyuki Yamamura ,  Masumi Fukuta

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/12 ,  H01L23/498 ,  H01L23/66 ,  H01P3/08

CPC分类号： H01L23/66 ,  H01L23/49844 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/15173 ,  H01L2924/3011

摘要： A semiconductor device comprising a metal base providing a metal case and a through-passage connecting the inside and outside of said metal case, an electric terminal which provides a bridge selectively deposited on the insulator base allowing formation of conductive layer thereon, said insulator base and said conductive layer and is integrated with said insulator base and is insertingly engaged with the through-passage of said metal base, and a semiconductor element accommodated in said metal case, wherein a pseudo-coaxial line structure is composed of said conductive layer, insulator base, insulator bridge and metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.

公开(公告)号：US4845534A

公开(公告)日：1989-07-04

申请号：US191737

申请日：1988-05-02

申请人： Masumi Fukuta

发明人： Masumi Fukuta

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/338 ,  H01L29/423 ,  H01L29/47 ,  H01L29/80 ,  H01L29/812 ,  H01L29/872

CPC分类号： H01L29/66878 ,  H01L21/28587 ,  H01L21/32137 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/80

摘要： A field effect semiconductor device having a compound semiconductor substrate e.g. GaAs, GaAlAs and the like, having an active region, and a gate electrode of one or more silicides of one or more refractory metals varying the composition or compositions thereof along the height of the gate electrode, resultantly varying the etching rate thereof along the height of the gate electrode. The gate electrode having a shorter length of the portion contacting the active region than of the portion remote from the active region, realized by the foregoing difference in etching rate. The gate electrode is preferably lined with a metal having a large conductivity. A pair of source and drain electrodes are produced on the active region, resultantly the field effect semiconductor device has a fast operation speed so as to be appropriate for super high frequency circuits.

摘要翻译： 具有化合物半导体衬底的场效应半导体器件 具有活性区域的GaAs，GaAlAs等，以及一种或多种难熔金属的一种或多种硅化物的栅电极沿着栅电极的高度改变其组成或组成，从而改变其沿着高度的蚀刻速率 的栅电极。 通过上述蚀刻速率的差异，栅极电极具有比有源区域远的部分接触有源区域的部分的较短的长度。 栅电极优选地具有导电性大的金属。 在有源区域上产生一对源电极和漏电极，结果是场效应半导体器件具有快速的操作速度，从而适用于超高频电路。