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    Spin-torque transfer magneto-resistive memory architecture
    7.
    发明授权
    Spin-torque transfer magneto-resistive memory architecture 失效
    自旋扭矩传递磁阻存储器架构

    公开(公告)号：US08456901B2

    公开(公告)日：2013-06-04

    申请号：US13559672

    申请日：2012-07-27

    申请人： John K. DeBrosse ,  Yutaka Nakamura

    发明人： John K. DeBrosse ,  Yutaka Nakamura

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  Y10S977/935

    摘要： A system includes a processor and a memory array connected to the processor comprising a first memory cell comprising a first magnetic tunnel junction device having a first terminal connected to a first bit line and a second terminal, and a first field effect transistor having a source terminal connected to a second bit line, a gate terminal connected to a word line, and a drain terminal connected to the second terminal of the first magnetic tunnel junction device, and a second memory cell comprising a second magnetic tunnel junction device having a first terminal connected to a third bit line and a second terminal, and a second field effect transistor having a source terminal connected to the second bit line, a gate terminal connected to the word line, and a drain terminal connected to the second terminal of the second magnetic tunnel junction device.

    摘要翻译： 一种系统包括处理器和连接到处理器的存储器阵列，该存储器阵列包括第一存储器单元，该第一存储器单元包括具有连接到第一位线的第一端子和第二端子的第一磁性隧道结器件，以及具有源极端子的第一场效应晶体管 连接到第二位线，连接到字线的栅极端子和连接到第一磁性隧道结装置的第二端子的漏极端子，以及包括第二磁性隧道结装置的第二存储单元，第二磁性隧道结装置具有第一端子连接 至第三位线和第二端子，以及第二场效应晶体管，其源极端子连接到第二位线，连接到字线的栅极端子和连接到第二磁通道的第二端子的漏极端子 连接装置。

    REFERENCE CELLS FOR SPIN TORQUE BASED MEMORY DEVICE
    8.
    发明申请
    REFERENCE CELLS FOR SPIN TORQUE BASED MEMORY DEVICE 失效
    基于旋转扭矩的记忆装置的参考电池

    公开(公告)号：US20110173513A1

    公开(公告)日：2011-07-14

    申请号：US12684486

    申请日：2010-01-08

    申请人： John K. DeBrosse ,  Daniel C. Worledge

    发明人： John K. DeBrosse ,  Daniel C. Worledge

    IPC分类号： H03M13/05 ,  G06F11/10

    CPC分类号： G06F11/1048 ,  H03M13/13

    摘要： A method of reading and correcting data within a memory device that includes reading each data bit of a data word using a plurality of reference cells corresponding to each data bit, performing error detection on the read data bits, and correcting a read data bit when an error is detected using error correction code (ECC) and writing each corresponding reference cells to an original memory state thereof.

    摘要翻译： 一种读取和校正存储器件内的数据的方法，包括使用对应于每个数据位的多个参考单元读取数据字的每个数据位，对读取的数据位执行错误检测，以及当读取数据位时 使用纠错码（ECC）检测错误，并将每个对应的参考单元写入其原始存储器状态。

    METHOD AND APPARATUS FOR INITIALIZING REFERENCE CELLS OF A TOGGLE SWITCHED MRAM DEVICE
    9.
    发明申请
    METHOD AND APPARATUS FOR INITIALIZING REFERENCE CELLS OF A TOGGLE SWITCHED MRAM DEVICE 失效
    用于初始化切换MRAM器件的参考电池的方法和装置

    公开(公告)号：US20080175043A1

    公开(公告)日：2008-07-24

    申请号：US11624707

    申请日：2007-01-19

    申请人： John K. DeBrosse ,  Mark C. H. Lamorey

    发明人： John K. DeBrosse ,  Mark C. H. Lamorey

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C7/14 ,  G11C11/16 ,  G11C2207/2254

    摘要： A method of determining an initial state of a reference cell in a fabricated memory array includes performing a first read operation of the reference cell by comparing current through the reference cell with the average current passing through a pair of data cells, and storing the result of the first read operation; inverting the value of one of the pair of the data cells; performing a second read operation of the reference cell, and storing the result of the second read operation; inverting the value of the other of the pair of the data cells; performing a third read operation of the reference cell, and storing the result of the third read operation. A majority compare operation of the results of the first, second and third operations is performed, wherein the result of the majority compare operation is the initial state of the reference cell.

    摘要翻译： 确定制造的存储器阵列中的参考单元的初始状态的方法包括通过将通过参考单元的电流与通过一对数据单元的平均电流进行比较来执行参考单元的第一读取操作，并且存储 第一次读取操作; 反转一对数据单元之一的值; 执行参考单元的第二读取操作，并存储第二读取操作的结果; 反转一对数据单元中的另一个的值; 执行参考单元的第三读取操作，并存储第三读取操作的结果。 执行第一，第二和第三操作的结果的多数比较操作，其中多数比较操作的结果是参考单元的初始状态。

    Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption
    10.
    发明授权
    Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption 失效
    用于选择MRAM器件的各向异性轴角度以降低功耗的方法和结构

    公开(公告)号：US07102916B2

    公开(公告)日：2006-09-05

    申请号：US10710281

    申请日：2004-06-30

    申请人： Philip L. Trouilloud ,  David W. Abraham ,  John K. DeBrosse ,  Daniel Worledge

    发明人： Philip L. Trouilloud ,  David W. Abraham ,  John K. DeBrosse ,  Daniel Worledge

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A method for determining a desired anisotropy axis angle for a magnetic random access memory (MRAM) device includes selecting a plurality of initial values for the anisotropy axis angle and determining, for each selected initial value, a minimum thickness for at least one ferromagnetic layer of the MRAM device. The minimum thickness corresponds to a predefined activation energy of an individual cell within the MRAM device. For each selected value, a minimum applied magnetic field value in a wordline direction and a bitline direction of the MRAM device is also determined so as maintain the predefined activation energy. For each selected value, an applied power per bit value is calculated, wherein the desired anisotropy axis angle is the selected anisotropy axis angle corresponding to a minimum power per bit value.

    摘要翻译： 一种用于确定磁性随机存取存储器（MRAM）装置的期望的各向异性轴角的方法包括：为各向异性轴角选择多个初始值，并为每个所选择的初始值确定至少一个铁磁层的最小厚度 MRAM设备。 最小厚度对应于MRAM设备内单个单元的预定激活能。 对于每个选择的值，还确定MRAM装置的字线方向和位线方向上的最小施加磁场值，以便维持预定的激活能量。 对于每个选择的值，计算每位值的施加功率，其中期望的各向异性轴角是对应于每位值的最小功率的所选各向异性轴角。