INTEGRATED ELECTROOPTIC SYSTEM
    1.
    发明申请
    INTEGRATED ELECTROOPTIC SYSTEM 有权
    集成电气系统

    公开(公告)号:US20100108867A1

    公开(公告)日:2010-05-06

    申请号:US12685598

    申请日:2010-01-11

    IPC分类号: G01J3/50 H01L31/18

    摘要: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

    摘要翻译: 集成电路包括至少一个能够在可见光谱的至少一个波长的光到达光的时候传递电信号的光敏元件,以及用作电化学快门的电光系统。 电光系统位于能够到达感光元件的至少一条光线的路径中,并且具有取决于电化学反应的至少一种光学性质,其可以通过电控制信号进行修改。 光学性质优选为透射性。

    PEALD Deposition of a Silicon-Based Material
    2.
    发明申请
    PEALD Deposition of a Silicon-Based Material 审中-公开
    PEALD沉积硅基材料

    公开(公告)号:US20070251444A1

    公开(公告)日:2007-11-01

    申请号:US11739631

    申请日:2007-04-24

    IPC分类号: C30B23/00 C30B28/14

    摘要: A process for depositing a silicon-based material on a substrate uses the technology of plasma-enhanced atomic layer deposition. The process is carried out over several cycles, wherein each cycle includes: exposing the substrate to a first precursor, which is an organometallic silicon precursor; and applying a plasma of at least a second precursor, different from the first precursor. Semiconductor products such as 3D capacitors, vertical transistor gate spacers, and conformal transistor stressors are made from the process.

    摘要翻译: 用于在衬底上沉积硅基材料的方法使用等离子体增强的原子层沉积技术。 该过程在几个循环中进行,其中每个循环包括:将基底暴露于作为有机金属硅前体的第一前体; 以及施加不同于第一前体的至少第二前体的等离子体。 从该方法制造诸如3D电容器,垂直晶体管栅极间隔物和保形晶体管应力源的半导体产品。

    Integrated electrooptic system
    3.
    发明授权
    Integrated electrooptic system 有权
    集成电光系统

    公开(公告)号:US07667173B2

    公开(公告)日:2010-02-23

    申请号:US11655773

    申请日:2007-01-19

    IPC分类号: H01L27/00

    摘要: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

    摘要翻译: 集成电路包括至少一个能够在可见光谱的至少一个波长的光到达光的时候传递电信号的光敏元件,以及用作电化学快门的电光系统。 电光系统位于能够到达感光元件的至少一条光线的路径中,并且具有取决于电化学反应的至少一种光学性质,其可以通过电控制信号进行修改。 光学性质优选为透射性。

    Integrated electrooptic system
    5.
    发明授权
    Integrated electrooptic system 有权
    集成电光系统

    公开(公告)号:US08013284B2

    公开(公告)日:2011-09-06

    申请号:US12685598

    申请日:2010-01-11

    IPC分类号: H01L27/00

    摘要: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

    摘要翻译: 集成电路包括至少一个能够在可见光谱的至少一个波长的光到达光的时候传递电信号的光敏元件,以及用作电化学快门的电光系统。 电光系统位于能够到达感光元件的至少一条光线的路径中,并且具有取决于电化学反应的至少一种光学性质,其可以通过电控制信号进行修改。 光学性质优选为透射性。

    PHOTODIODE WITH INTERFACIAL CHARGE CONTROL AND ASSOCIATED PROCESS
    6.
    发明申请
    PHOTODIODE WITH INTERFACIAL CHARGE CONTROL AND ASSOCIATED PROCESS 有权
    具有接口充电控制和相关工艺的光电二极管

    公开(公告)号:US20100289106A1

    公开(公告)日:2010-11-18

    申请号:US12781489

    申请日:2010-05-17

    IPC分类号: H01L31/06 H01L21/76

    摘要: A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure.

    摘要翻译: 光电二极管包括共享公共面的第一掺杂层和第二掺杂层。 深隔离沟槽具有与第一和第二掺杂层相邻的面。 导电层与第二掺杂层的自由面接触。 在与第一掺杂层和第二掺杂层的界面处提供保护层。 该保护层能够在界面处产生负电荷层。 保护层可以进一步定位在第二掺杂层内以形成中间保护结构。

    METHOD AND DEVICE FOR PRODUCING STRUCTURED OPTICAL MATERIALS
    7.
    发明申请
    METHOD AND DEVICE FOR PRODUCING STRUCTURED OPTICAL MATERIALS 有权
    用于生产结构光学材料的方法和装置

    公开(公告)号:US20100155974A1

    公开(公告)日:2010-06-24

    申请号:US12452842

    申请日:2008-06-09

    IPC分类号: B29D11/00 B28B1/14 B29C35/08

    CPC分类号: G03F7/2035

    摘要: The invention relates to a method for producing structured optical materials. It also relates to a device for producing structured optical materials, and to use of the method.In order to create a novel, continuous method for the production of structured optical materials, which is more economical than the known production method, it is proposed within the scope of the invention that optical material be applied to a carrier, a carrier or protective film be laminated onto the optical material, the resulting laminate be exposed to light and thereby structured, and subsequently a delamination of at least one of the films be performed.

    摘要翻译: 本发明涉及一种生产结构光学材料的方法。 本发明还涉及一种用于制造结构化光学材料的装置以及该方法的使用。 为了创造出一种新颖的连续生产结构光学材料的方法,其比现有的生产方法更经济,在本发明的范围内提出将光学材料应用于载体,载体或保护膜 层压到光学材料上,将所得到的层压板暴露于光并由此构成,随后进行至少一个膜的分层。

    Device for producing structured optical materials
    8.
    发明授权
    Device for producing structured optical materials 有权
    用于生产结构光学材料的装置

    公开(公告)号:US08382463B2

    公开(公告)日:2013-02-26

    申请号:US12452842

    申请日:2008-06-09

    IPC分类号: B29D11/00

    CPC分类号: G03F7/2035

    摘要: The invention relates to a method for producing structured optical materials. It also relates to a device for producing structured optical materials, and to use of the method.In order to create a novel, continuous method for the production of structured optical materials, which is more economical than the known production method, it is proposed within the scope of the invention that optical material be applied to a carrier, a carrier or protective film be laminated onto the optical material, the resulting laminate be exposed to light and thereby structured, and subsequently a delamination of at least one of the films be performed.

    摘要翻译: 本发明涉及一种生产结构光学材料的方法。 本发明还涉及一种用于制造结构化光学材料的装置以及该方法的使用。 为了创造出一种新颖的连续生产结构光学材料的方法,其比现有的生产方法更经济,在本发明的范围内提出将光学材料应用于载体,载体或保护膜 层压到光学材料上,将所得到的层压板暴露于光并由此构成,随后进行至少一个膜的分层。

    Photodiode with interfacial charge control and associated process
    10.
    发明授权
    Photodiode with interfacial charge control and associated process 有权
    具有界面电荷控制和相关工艺的光电二极管

    公开(公告)号:US08410570B2

    公开(公告)日:2013-04-02

    申请号:US12781489

    申请日:2010-05-17

    摘要: A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure.

    摘要翻译: 光电二极管包括共享公共面的第一掺杂层和第二掺杂层。 深隔离沟槽具有与第一和第二掺杂层相邻的面。 导电层与第二掺杂层的自由面接触。 在与第一掺杂层和第二掺杂层的界面处提供保护层。 该保护层能够在界面处产生负电荷层。 保护层可以进一步定位在第二掺杂层内以形成中间保护结构。