公开(公告)号：US20070108513A1

公开(公告)日：2007-05-17

申请号：US11540922

申请日：2006-09-29

Applicant: Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

Inventor： Michael Rub ,  Herbert Schafer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC: H01L31/00

CPC classification number: H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

Abstract: The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

Abstract translation: 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US20060118862A1

公开(公告)日：2006-06-08

申请号：US11262483

申请日：2005-10-28

Applicant: Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rub ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schaffer

Inventor： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rub ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schaffer

IPC: H01L29/94

CPC classification number: H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

公开(公告)号：US4887916A

公开(公告)日：1989-12-19

申请号：US248548

申请日：1988-09-23

Applicant: Peter Adam ,  Ferdinand Hoffmann ,  Michael Rub

Inventor： Peter Adam ,  Ferdinand Hoffmann ,  Michael Rub

IPC: F16C23/04 ,  F16C27/00 ,  F16C27/02 ,  F16F1/32 ,  H02K5/167

CPC classification number: F16C23/045 ,  F16C27/02 ,  H02K5/1672

Abstract: The disclosed clamping plate exhibits a particularly great spring action and it includes a clamping rim (10) and with spring tabs (20) which point radially inward and against which the cups of the self-aligning or cup-type bearing make contact. According to the invention the spring tabs (20) are particularly long and extend from the clamping rim (10). The tabs also bend inwardly over a bead (9) limiting the clamping rim (10). An especially inexpensive design from the aspect of production engineering and assembly is achieved in that the transition from the bead (9) to the plug-in hole (2) is rounded in the plug-in direction (6) of the clamping plate and the lower area of the bead (9) is designed as oil collecting groove.

Abstract translation: 所公开的夹板显示出特别大的弹簧作用，并且其包括夹紧边缘（10）和具有径向向内指向的弹簧片（20），并且所述自对准或杯型轴承的杯接触。 根据本发明，弹簧片（20）特别长并且从夹紧边缘（10）延伸。 翼片也在限制夹紧轮缘（10）的胎圈（9）上向内弯曲。 实现从制造工程和组装方面特别廉价的设计，其中从胎圈（9）到插入孔（2）的过渡在夹板的插入方向（6）上被倒圆，并且 珠（9）的下部区域被设计为集油槽。