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    Power transistor cell and power transistor component with fusible link
    2.
    发明申请
    Power transistor cell and power transistor component with fusible link 失效
    功率晶体管单元和功率晶体管组件具有可熔链接

    公开(公告)号：US20050157571A1

    公开(公告)日：2005-07-21

    申请号：US11009537

    申请日：2004-12-10

    申请人： Carsten Schaffer

    发明人： Carsten Schaffer

    IPC分类号： G11C7/00 ,  H01L23/525 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

    CPC分类号： H01L29/7813 ,  H01L23/5256 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： Transistor cells (2) of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode (52) in sections and is connected via a gate cell terminal (43) to a gate wiring line (81) led to a gate terminal (44) of the power transistor component (1). The gate conductor structure (5) has a desired fusible section (51) with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section (51) can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (41), the gate conductor section (5) is interrupted in the desired fusible section (51) and the gate electrode (52) is disconnected from the gate wiring line (81). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.

    摘要翻译： 功率晶体管组件的晶体管单元（2）在每种情况下都设置有栅极导体结构，该栅极导体结构以部分形成栅电极（52），并且经由栅极电池端子（43）连接到栅极布线（81） 到功率晶体管组件（1）的栅极端子（44）。 栅极导体结构（5）具有设置在空腔内的具有增加的电阻的期望的可熔部分（51）。 所希望的可熔部分（51）的电阻可以这样设置，即在电流负载值为缺陷栅极电介质（41）的典型值的电流负载的情况下，栅极导体部分（5） ）在期望的可熔部分（51）中断，并且栅电极（52）与栅极布线（81）断开。 功率晶体管组件可以以高产量生产并且在应用操作期间具有较少数量的故障。

    Semiconductor device and Fabrication method
    4.
    发明申请
    Semiconductor device and Fabrication method 有权
    半导体器件及制作方法

    公开(公告)号：US20090186462A1

    公开(公告)日：2009-07-23

    申请号：US12416935

    申请日：2009-04-02

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/31

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。