公开(公告)号：US09349920B2

公开(公告)日：2016-05-24

申请号：US13720646

申请日：2012-12-19

申请人： Min Gyu Na ,  Sung Ho Choo ,  Hyun Seoung Ju ,  Gi Seok Hong ,  Ji Hee No

发明人： Min Gyu Na ,  Sung Ho Choo ,  Hyun Seoung Ju ,  Gi Seok Hong ,  Ji Hee No

IPC分类号： H01L33/00 ,  H01L33/38

CPC分类号： H01L33/382 ,  H01L33/06 ,  H01L33/387 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

摘要翻译： 公开了一种发光器件。 发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层;透光导电层，设置在第二导电型半导体层上并具有多个 的第二导电型半导体层暴露的开放区域和设置在透光性导电层上的第二电极，以便延伸到至少一个开放区域之外，其中第二电极接触第二导电类型 半导体层，并且在除了开放区域之外的区域中接触透光导电层。

公开(公告)号：US08866180B2

公开(公告)日：2014-10-21

申请号：US13031803

申请日：2011-02-22

申请人： Sung Kyoon Kim ,  Myeong Soo Kim ,  Woo Sik Lim ,  Min Gyu Na ,  Sung Ho Choo

发明人： Sung Kyoon Kim ,  Myeong Soo Kim ,  Woo Sik Lim ,  Min Gyu Na ,  Sung Ho Choo

IPC分类号： H01L33/38 ,  H01L33/60 ,  H01L33/42 ,  H01L33/40 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/58 ,  H01L33/007 ,  H01L33/20 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括衬底，发光结构层，第二电极，第一电极，接触部分和第一电极层。 第一电极在有源层下方的区域中从基板的下部到第一导电型半导体层的下部设置在基板中。 接触部分比第一电极宽，并与第一导电型半导体层的下部接触。 第一电极层设置在基板下方并连接到第一电极。

公开(公告)号：US20130161585A1

公开(公告)日：2013-06-27

申请号：US13720646

申请日：2012-12-19

申请人： Min Gyu Na ,  Sung Ho Choo ,  Hyun Seoung Ju ,  Gi Seok Hong ,  Ji Hee No

发明人： Min Gyu Na ,  Sung Ho Choo ,  Hyun Seoung Ju ,  Gi Seok Hong ,  Ji Hee No

IPC分类号： H01L33/38

CPC分类号： H01L33/382 ,  H01L33/06 ,  H01L33/387 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

摘要翻译： 公开了一种发光器件。 发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层;透光导电层，设置在第二导电型半导体层上并具有多个 的第二导电型半导体层暴露的开放区域和设置在透光性导电层上的第二电极，以便延伸到至少一个开放区域之外，其中第二电极接触第二导电类型 半导体层，并且在除了开放区域之外的区域中接触透光导电层。

公开(公告)号：US08120047B2

公开(公告)日：2012-02-21

申请号：US12648670

申请日：2009-12-29

申请人： Chang Tae Kim ,  Min Gyu Na

发明人： Chang Tae Kim ,  Min Gyu Na

IPC分类号： H01L33/00

CPC分类号： H01L33/382

摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a first groove and a second groove formed therein, the substrate including a first surface and a second surface opposite to the first surface, a plurality of III-nitride semiconductor layers including a first semiconductor layer formed over the first surface of the substrate, a second semiconductor layer formed over the first III-nitride semiconductor layer, and an active layer disposed between the first and second III-nitride semiconductor layers and generating light by recombination of electrons and holes, a first opening formed on the first groove, a second opening formed on the second groove, a first electrode electrically connected from the second surface to the first III-nitride semiconductor layer through the first groove, and a second electrode electrically connected from the second surface to the second III-nitride semiconductor layer through the second groove and the second opening.

摘要翻译： 本公开内容涉及一种III族氮化物半导体发光器件，其包括具有第一沟槽的衬底和形成在其中的第二沟槽，所述衬底包括第一表面和与第一表面相对的第二表面，多个III族氮化物 包括形成在基板的第一表面上的第一半导体层，形成在第一III族氮化物半导体层上的第二半导体层的半导体层以及设置在第一和第二III族氮化物半导体层之间并通过复合产生光的有源层 的电子和空穴，形成在第一凹槽上的第一开口，形成在第二凹槽上的第二开口，通过第一凹槽从第二表面电连接到第一III族氮化物半导体层的第一电极，以及第二电极， 从第二表面连接到第二III族氮化物半导体层 第二次开幕

公开(公告)号：US20110309383A1

公开(公告)日：2011-12-22

申请号：US13164343

申请日：2011-06-20

申请人： MyeongSoo Kim ,  SungKyoon Kim ,  Woo Sik Lim ,  Sung Ho Choo ,  Hee Young Beom ,  Min Gyu Na

发明人： MyeongSoo Kim ,  SungKyoon Kim ,  Woo Sik Lim ,  Sung Ho Choo ,  Hee Young Beom ,  Min Gyu Na

IPC分类号： H01L33/62

CPC分类号： H01L33/025 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2101/42 ,  B23K2103/50 ,  H01L33/16 ,  H01L33/20 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a crystalline substrate having a plurality of side surfaces, a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. An amorphous region is defined in a side surface of the substrate, and the amorphous regions of two sides adjacent to each other have different depths from a top surface of the substrate.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括具有多个侧表面的晶体衬底，在衬底上包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构层，以及第一电极上的第一电极 导电型半导体层和第二导电型半导体层上的第二电极。 非晶区域限定在基板的侧表面中，并且彼此相邻的两侧的非晶区域具有与基板的顶表面不同的深度。

公开(公告)号：US20100102352A1

公开(公告)日：2010-04-29

申请号：US12647750

申请日：2009-12-28

申请人： Chang Tae Kim ,  Min Gyu Na

发明人： Chang Tae Kim ,  Min Gyu Na

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/22

摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a scattering zone formed therein, and a plurality of III-nitride semiconductor layers including a first III-nitride semiconductor layer formed over the substrate and having a first conductivity type, a second III-nitride semiconductor layer formed over the first III-nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes.

摘要翻译： 本公开内容涉及一种III族氮化物半导体发光器件，其包括其中形成有散射区的衬底，以及多个III族氮化物半导体层，包括形成在衬底上并具有第一导电性的第一III族氮化物半导体层 形成在所述第一III族氮化物半导体层上并具有不同于所述第一导电类型的第二导电类型的第二III族氮化物半导体层，以及设置在所述第一III族氮化物半导体层和所述第二III族氮化物之间的有源层 半导体层，并通过电子和空穴的复合产生光。

公开(公告)号：US20100096651A1

公开(公告)日：2010-04-22

申请号：US12648670

申请日：2009-12-29

申请人： Chang Tae Kim ,  Min Gyu Na

发明人： Chang Tae Kim ,  Min Gyu Na

IPC分类号： H01L33/00

CPC分类号： H01L33/382

摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a first groove and a second groove formed therein, the substrate including a first surface and a second surface opposite to the first surface, a plurality of III-nitride semiconductor layers including a first semiconductor layer formed over the first surface of the substrate, a second semiconductor layer formed over the first III-nitride semiconductor layer, and an active layer disposed between the first and second III-nitride semiconductor layers and generating light by recombination of electrons and holes, a first opening formed on the first groove, a second opening formed on the second groove, a first electrode electrically connected from the second surface to the first III-nitride semiconductor layer through the first groove, and a second electrode electrically connected from the second surface to the second III-nitride semiconductor layer through the second groove and the second opening.

摘要翻译： 本公开内容涉及一种III族氮化物半导体发光器件，其包括具有第一沟槽的衬底和形成在其中的第二沟槽，所述衬底包括第一表面和与第一表面相对的第二表面，多个III族氮化物 包括形成在基板的第一表面上的第一半导体层，形成在第一III族氮化物半导体层上的第二半导体层的半导体层以及设置在第一和第二III族氮化物半导体层之间并通过复合产生光的有源层 的电子和空穴，形成在第一凹槽上的第一开口，形成在第二凹槽上的第二开口，通过第一凹槽从第二表面电连接到第一III族氮化物半导体层的第一电极，以及第二电极， 从第二表面连接到第二III族氮化物半导体层 第二次开幕

公开(公告)号：US08564008B2

公开(公告)日：2013-10-22

申请号：US13073381

申请日：2011-03-28

申请人： Hee Young Beom ,  Min Gyu Na

发明人： Hee Young Beom ,  Min Gyu Na

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive type semiconductor layer having a first top surface and a second top surface under the first top surface, an active layer on the first top surface of the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, a first electrode on the second top surface of the first conductive type semiconductor layer, an intermediate refractive layer on the second top surface of the first conductive type semiconductor layer, and a second electrode connected to the second conductive type semiconductor layer.

摘要翻译： 提供发光器件，制造发光器件的方法，发光器件封装和照明系统。 发光器件包括第一导电型半导体层，其具有第一顶表面和第一顶表面下的第二顶表面，在第一导电类型半导体层的第一顶表面上的有源层，第二导电类型半导体层 有源层，第一导电类型半导体层的第二顶表面上的第一电极，第一导电类型半导体层的第二顶表面上的中间折射层和连接到第二导电类型半导体层的第二电极。

公开(公告)号：US08319241B2

公开(公告)日：2012-11-27

申请号：US13042884

申请日：2011-03-08

申请人： Min Gyu Na ,  Myung Hoon Jung ,  Sung Hoon Jung

发明人： Min Gyu Na ,  Myung Hoon Jung ,  Sung Hoon Jung

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes.

摘要翻译： 提供了一种发光装置。 发光器件包括第一导电类型半导体层，第一导电类型半导体层上的有源层，有源层上的第二导电类型半导体层，设置在第二导电类型半导体层上的未掺杂半导体层，并且包括多个 的第一孔，以及设置在未掺杂半导体层上并包括多个第二孔的第三导电类型半导体层。

公开(公告)号：US20110254035A1

公开(公告)日：2011-10-20

申请号：US13004676

申请日：2011-01-11

申请人： Sung Kyoon Kim ,  Hee Young Beom ,  Woo Sik Lim ,  Min Gyu Na

发明人： Sung Kyoon Kim ,  Hee Young Beom ,  Woo Sik Lim ,  Min Gyu Na

IPC分类号： H01L33/42 ,  H01L33/00

CPC分类号： H01L33/382 ,  F21K9/23 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/20 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0016 ,  H01L2924/00014

摘要： Disclosed are a light emitting device, a light emitting device package, and an illumination system. The light emitting device includes a substrate; a light emitting structure layer including a first conductive type semiconductor layer formed on the substrate and having first and second upper surfaces, in which the second upper surface is closer to the substrate than the first upper surface, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode on the second conductive type semiconductor layer; and at least one first electrode extending at least from the second upper surface of the first conductive type semiconductor layer to a lower surface of the substrate by passing through the substrate.

摘要翻译： 公开了一种发光器件，发光器件封装和照明系统。 发光装置包括：基板; 发光结构层，包括形成在所述基板上的第一和第二上表面的第一导电类型半导体层，其中所述第二上表面比所述第一上表面更靠近所述基板，所述第一导电类型半导体上的有源层 层和有源层上的第二导电类型半导体层; 第二导电型半导体层上的第二电极; 以及至少一个第一电极，所述至少一个第一电极至少从第一导电类型半导体层的第二上表面延伸通过衬底到衬底的下表面。