LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME
    2.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME 有权
    发光装置,发光装置包装及具有该发光装置的照明系统

    公开(公告)号:US20110198563A1

    公开(公告)日:2011-08-18

    申请号:US13025662

    申请日:2011-02-11

    IPC分类号: H01L33/06

    摘要: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm.

    摘要翻译: 发光器件包括:发光结构,包括第一导电类型半导体层,第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层; 以及形成在所述发光结构的上下的至少一个的透明电极层,其中,所述透明电极层的厚度在30nm〜70nm的范围内,以获得相对于a的透射率等于或大于70% 420nm至510nm的波长范围。

    LIGHT EMITTING DEVICE
    3.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20140159071A1

    公开(公告)日:2014-06-12

    申请号:US14096138

    申请日:2013-12-04

    IPC分类号: H01L27/15

    摘要: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

    摘要翻译: 发光装置包括基板,发光单元,每个发光单元包括包括下半导体层和上半导体层的发光结构,上电极和下电极,导电互连层,电连接 发光单元中的第一个和第二个发光单元的上电极以及从上电极和上半导体层之间延伸设置的电流阻挡层,其中每个发光单元还包括导电层 布置成将第二发光单元的上电极电连接到第二发光单元的上半导体层。

    Light emitting diode
    4.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号:US08669582B2

    公开(公告)日:2014-03-11

    申请号:US13354138

    申请日:2012-01-19

    IPC分类号: H01L33/00

    摘要: Disclosed is a light emitting device a light transmissive substrate, a light emitting structure disposed on the light transmissive substrate, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a conductive layer disposed on the second conductive type semiconductor layer, a first electrode part disposed on the conductive layer, with at least predetermined region in contact with the first conductive type semiconductor layer, passing through the conductive layer, the second conductive type semiconductor layer and the active, and a first insulation layer disposed between the conductive layer and the first electrode part, between the second conductive type semiconductor layer and the first electrode part and between the active layer and the first electrode part.

    摘要翻译: 公开了一种发光装置,透光基板,设置在透光基板上的发光结构,包括第一导电类型半导体层,有源层和第二导电类型半导体层,设置在第二导电类型上的导电层 半导体层,设置在导电层上的第一电极部分,至少与第一导电类型半导体层接触的预定区域,穿过导电层,第二导电类型半导体层和有源层,以及第一绝缘层, 在第二导电类型半导体层和第一电极部之间以及有源层和第一电极部之间的导电层和第一电极部之间。

    LIGHT EMITTING DEVICE
    5.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20120113673A1

    公开(公告)日:2012-05-10

    申请号:US13354138

    申请日:2012-01-19

    IPC分类号: H01L33/38 G09F13/18

    摘要: Disclosed is a light emitting device a light transmissive substrate, a light emitting structure disposed on the light transmissive substrate, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a conductive layer disposed on the second conductive type semiconductor layer, a first electrode part disposed on the conductive layer, with at least predetermined region in contact with the first conductive type semiconductor layer, passing through the conductive layer, the second conductive type semiconductor layer and the active, and a first insulation layer disposed between the conductive layer and the first electrode part, between the second conductive type semiconductor layer and the first electrode part and between the active layer and the first electrode part.

    摘要翻译: 公开了一种发光装置,透光基板,设置在透光基板上的发光结构,包括第一导电类型半导体层,有源层和第二导电类型半导体层,设置在第二导电类型上的导电层 半导体层,设置在导电层上的第一电极部分,至少与第一导电类型半导体层接触的预定区域,穿过导电层,第二导电类型半导体层和有源层,以及第一绝缘层, 在第二导电类型半导体层和第一电极部之间以及有源层和第一电极部之间的导电层和第一电极部之间。

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
    6.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
    发光装置,发光装置包装和照明系统

    公开(公告)号:US20110204403A1

    公开(公告)日:2011-08-25

    申请号:US13031803

    申请日:2011-02-22

    IPC分类号: H01L33/60

    摘要: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.

    摘要翻译: 提供了一种发光器件,发光器件封装和照明系统。 发光器件包括衬底,发光结构层,第二电极,第一电极,接触部分和第一电极层。 第一电极在有源层下方的区域中从基板的下部到第一导电型半导体层的下部设置在基板中。 接触部分比第一电极宽,并与第一导电型半导体层的下部接触。 第一电极层设置在基板下方并连接到第一电极。

    Light emitting device, method of manufacturing the same, light emitting device package, and lighting system
    7.
    发明授权
    Light emitting device, method of manufacturing the same, light emitting device package, and lighting system 有权
    发光器件,其制造方法,发光器件封装和照明系统

    公开(公告)号:US08536602B2

    公开(公告)日:2013-09-17

    申请号:US13071922

    申请日:2011-03-25

    IPC分类号: H01L33/00

    摘要: Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first light extracting structure formed on an outer portion of the first conductive type semiconductor layer and having a plurality of side surfaces and a plurality of upper surfaces formed in a step structure, and a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer.

    摘要翻译: 公开了一种发光器件。 发光器件包括发光结构层,其包括第一导电类型半导体层,第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层,形成在外部的第一光提取结构 第一导电型半导体层的第一导光型半导体层的第一光提取结构的多个侧面和多个上表面形成为台阶结构,以及透射层。

    Light emitting device, light emitting device package and lighting system having the same
    8.
    发明授权
    Light emitting device, light emitting device package and lighting system having the same 有权
    发光装置,发光装置封装和具有其的照明系统

    公开(公告)号:US08373178B2

    公开(公告)日:2013-02-12

    申请号:US13025662

    申请日:2011-02-11

    IPC分类号: H01L27/15

    摘要: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm.

    摘要翻译: 发光器件包括:发光结构,包括第一导电类型半导体层,第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层; 以及形成在所述发光结构的上下的至少一个的透明电极层,其中,所述透明电极层的厚度在30nm〜70nm的范围内,以获得相对于a的透射率等于或大于70% 420nm至510nm的波长范围。

    LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
    9.
    发明申请
    LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
    发光装置,其制造方法,发光装置包装和照明系统

    公开(公告)号:US20110254036A1

    公开(公告)日:2011-10-20

    申请号:US13071922

    申请日:2011-03-25

    IPC分类号: H01L33/00

    摘要: Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first light extracting structure formed on an outer portion of the first conductive type semiconductor layer and having a plurality of side surfaces and a plurality of upper surfaces formed in a step structure, and a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer.

    摘要翻译: 公开了一种发光器件。 发光器件包括发光结构层,其包括第一导电类型半导体层,第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层,形成在外部的第一光提取结构 第一导电型半导体层的第一导光型半导体层的第一光提取结构的多个侧面和多个上表面形成为台阶结构,以及透射层。

    Data transmitting/receiving device of a multiprocessor system and method
therefor
    10.
    发明授权
    Data transmitting/receiving device of a multiprocessor system and method therefor 失效
    多处理器系统的数据发送/接收装置及其方法

    公开(公告)号:US5958031A

    公开(公告)日:1999-09-28

    申请号:US882603

    申请日:1997-06-25

    申请人: Myeong-Soo Kim

    发明人: Myeong-Soo Kim

    IPC分类号: G06F15/167 G06F13/00

    CPC分类号: G06F15/167

    摘要: A data transmitting/receiving device and method for transmitting and receiving data between processors in a multiprocessor system. A data bus interconnecting a plurality of processors is separated into sub-buses, with each sub-bus associated with a separate processor. This architecture serves to increase bus occupation efficiency and thereby improve system performance, and it allows DPRAMs to be replaced with SRAMs to reduce the production cost of the system.

    摘要翻译: 一种用于在多处理器系统中的处理器之间发送和接收数据的数据发送/接收装置和方法。 互连多个处理器的数据总线被分成子总线,每个子总线与单独的处理器相关联。 该架构有助于提高总线占用效率,从而提高系统性能,并允许将DPRAM替换为SRAM,以降低系统的生产成本。